首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   630051篇
  免费   5115篇
  国内免费   1634篇
化学   319285篇
晶体学   9296篇
力学   32068篇
综合类   27篇
数学   83021篇
物理学   193103篇
  2021年   5833篇
  2020年   6314篇
  2019年   7174篇
  2018年   9687篇
  2017年   9814篇
  2016年   13573篇
  2015年   7285篇
  2014年   12336篇
  2013年   27943篇
  2012年   21635篇
  2011年   25750篇
  2010年   19417篇
  2009年   19376篇
  2008年   24370篇
  2007年   24129篇
  2006年   21902篇
  2005年   19564篇
  2004年   18336篇
  2003年   16516篇
  2002年   16338篇
  2001年   17514篇
  2000年   13469篇
  1999年   10444篇
  1998年   8979篇
  1997年   8900篇
  1996年   8333篇
  1995年   7468篇
  1994年   7549篇
  1993年   7270篇
  1992年   7829篇
  1991年   8221篇
  1990年   7944篇
  1989年   7857篇
  1988年   7649篇
  1987年   7385篇
  1986年   7110篇
  1985年   9110篇
  1984年   9525篇
  1983年   7959篇
  1982年   8191篇
  1981年   7749篇
  1980年   7325篇
  1979年   7957篇
  1978年   8186篇
  1977年   8163篇
  1976年   8141篇
  1975年   7776篇
  1974年   7570篇
  1973年   7932篇
  1972年   5833篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
11.
12.
Intricate behaviour of one-electron potentials from the Euler equation for electron density and corresponding gradient force fields in crystals was studied. Channels of locally enhanced kinetic potential and corresponding saddle Lagrange points were found between chemically bonded atoms. Superposition of electrostatic and kinetic potentials and electron density allowed partitioning any molecules and crystals into atomic - and potential-based -basins; -basins explicitly account for the electron exchange effect, which is missed for -ones. Phenomena of interatomic charge transfer and related electron exchange were explained in terms of space gaps between zero-flux surfaces of - and -basins. The gap between - and -basins represents the charge transfer, while the gap between - and -basins is a real-space manifestation of sharing the transferred electrons caused by the static exchange and kinetic effects as a response against the electron transfer. The regularity describing relative positions of -, -, and - basin boundaries between interacting atoms was proposed. The position of -boundary between - and -ones within an electron occupier atom determines the extent of transferred electron sharing. The stronger an H⋅⋅⋅O hydrogen bond is, the deeper hydrogen atom's -basin penetrates oxygen atom's -basin, while for covalent bonds a -boundary closely approaches a -one indicating almost complete sharing of the transferred electrons. In the case of ionic bonds, the same region corresponds to electron pairing within the -basin of an electron occupier atom.  相似文献   
13.
Abstract

The effect of ion-plasma deposition on the structure of high-carbon films (at. %) Fe–(20–84) % С, Co–(5–52) % С, Ni–(7–61) % С was investigated. The lattice periods and crystallite sizes of nonequilibrium phases in the as-deposited state and after heating are determined. The temperatures of the beginning and end of the decay of metastable phases during heating at a constant speed are established. The transition from an amorphous to an equilibrium crystalline state in Fe–C films passes through the stage of formation and subsequent decomposition of an intermediate, metastable hcp phase of variable composition. The electrical and hysteretic magnetic properties of the films were measured in the as-deposited state and after heat treatment. The compositions and conditions for producing films with low values of the temperature coefficient of electrical resistance and high coercive force are established. Thus, high-carbon films of Ni–61% C in the as-depoteted state and Fe–69% C films after heating to 900?K are characterized by small TCR values (± 10?6 К?1) over a wide temperature range.  相似文献   
14.
15.
16.
The reactivity of amidinatotetrylenes of the type E(tBu2bzm)R1 (E=Si, Ge; tBu2bzm=N,N′-bis(tertbutyl)benzamidinate; R1=alkyl or aryl) with the chromium Fischer alkynylcarbene complexes [Cr{C(OEt)C2R2}(CO)5] (R2=Ph; ferrocenyl, Fc) has been studied. At room temperature, two different reaction pathways have been identified: (a) attack of the amidinatotetrylene to the alkynyl C2 atom (γ-attack), which leads to σ-allenyl complexes in which the original Ccarbene atom maintains its attachment to the Cr(CO)5 and OEt groups (compounds 3 ), and (b) attack of the amidinatotetrylene to the Ccarbene atom (α-attack), which ends in σ-allenyl complexes in which the original Ccarbene atom is not attached to the metal atom and has been inserted into an E−N bond of the amidinatotetrylene forming an E-C-N-C-N five-membered ring (compounds 4 ). It has been found that compounds 3 are thermodynamically less stable than their corresponding 4 isomers and that some of the former (E=Ge; R1=CH2SiMe3) can be transformed into the latter upon heating. At high temperatures (>70 °C) the reactions involving bulky amidinatotetrylenes (R1=Mes, tBu) end in the carbene-substitution products [Cr{E(tBu2bzm)R1}(CO)5].  相似文献   
17.
18.
19.
20.
The directionality of the hole-transfer processes between DNA backbone and base was investigated by using phosphorodithioate [P(S)=S] components. ESR spectroscopy in homogeneous frozen aqueous solutions and pulse radiolysis in aqueous solution at ambient temperature confirmed initial formation of G.+-P(S)=S. The ionization potential of G-P(S)=S was calculated to be slightly lower than that of guanine in 5′-dGMP. Subsequent thermally activated hole transfer from G.+ to P(S)=S led to dithiyl radical (P-2S.) formation on the μs timescale. In parallel, ESR spectroscopy, pulse radiolysis, and density functional theory (DFT) calculations confirmed P-2S. formation in an abasic phosphorodithioate model compound. ESR investigations at low temperatures and higher G-P(S)=S concentrations showed a bimolecular conversion of P-2S. to the σ2-σ*1-bonded dimer anion radical [-P-2S 2S-P-]G (150 K, DFT)=−7.2 kcal mol−1]. However, [-P-2S 2S-P-] formation was not observed by pulse radiolysis [ΔG° (298 K, DFT)=−1.4 kcal mol−1]. Neither P-2S. nor [-P-2S 2S-P-] oxidized guanine base; only base-to-backbone hole transfer occurs in phosphorodithioate.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号