Higher-order <Emphasis Type="Bold">?</Emphasis> corrections in the semiclassical quantization of chaotic billiards

In the periodic orbit quantization of physical systems, usually only the leading-order ? contribution to the density of states is considered. Therefore, by construction, the eigenvalues following from semiclassical trace formulae generally agree with the exact quantum ones only to lowest order of ?. In different theoretical work the trace formulae have been extended to higher orders of ?. The problem remains, however, how to actually calculate eigenvalues from the extended trace formulae since, even with ? corrections included, the periodic orbit sums still do not converge in the physical domain. For lowest-order semiclassical trace formulae the convergence problem can be elegantly, and universally, circumvented by application of the technique of harmonic inversion. In this paper we show how, for general scaling chaotic systems, also higher-order ? corrections to the Gutzwiller formula can be included in the harmonic inversion scheme, and demonstrate that corrected semiclassical eigenvalues can be calculated despite the convergence problem. The method is applied to the open three-disk scattering system, as a prototype of a chaotic system. Received 10 September 2001 and Received in final form 3 January 2002     

The standard model on non-commutative space-time

We consider the standard model on a non-commutative space and expand the action in the non-commutativity parameter . No new particles are introduced; the structure group is . We derive the leading order action. At zeroth order the action coincides with the ordinary standard model. At leading order in we find new vertices which are absent in the standard model on commutative space-time. The most striking features are couplings between quarks, gluons and electroweak bosons and many new vertices in the charged and neutral currents. We find that parity is violated in non-commutative QCD. The Higgs mechanism can be applied. QED is not deformed in the minimal version of the NCSM to the order considered. Received: 29 November 2001 / Published online: 25 January 2002     

Effect of amorphization on the electronic and lattice specific heat of an Ni2B alloy

The specific heats of the Ni₂B amorphous system and of its crystal analog were studied in the temperature range 3–270 K. The data obtained permitted us to isolate the contribution due to atomic vibrations from the experimentally measured specific heat, determine the electronic density of states at the Fermi level and the temperature dependence of the characteristic Debye parameter Θ, and to calculate some average frequencies (moments) of the vibrational spectrum. The electronic density of states at the Fermi level increases under amorphization. An analysis of the temperature dependence of the lattice specific heat showed that amorphization brings about a substantial growth in the density of vibrational states at low frequencies, whereas the spectrum-averaged and rms frequencies change very little, which is in good agreement with neutron diffraction measurements.     

The simulation of dendrite growth and partial discharges in epoxy resin

A self-consistent model of the development of dendrites and partial discharges in a dielectric solid under a variable voltage is suggested. Dendrites originate at sites with the enhanced local field strength and also where the dielectric is broken down under the action of partial discharges. The numerical simulation is used to quantitatively describe the space-time dynamics of the dendrites and partial discharges in epoxy resin for the tip-plane electrode configuration. The simulated data are compared with electrical measurements of partial discharges and with optical images of dendrite growth under the same conditions.     

Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step

Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl₃–H₂ system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.     

Development of high-speed video cameras for Dynamic PIV

The most promising next generation Image Velocimtry (IV) is the high-speed Dynamic PIV. It requires the development of innovative high-speed video camera sensors. We started by specifying the required performance of these new sensors, for measurements in air and water flows. These criteria founded on the most recent developments in PIV algorithms and incorporate results from a large questionnaire survey of users of high-speed video cameras in Japan. The results suggest that the followings are required: (1) frame rate of 1,000,000 fps, (2) pixel count of 1,000,000 pixels, (3) frame storage capacity of 100–200 frames for tracing a single event and 10,000 frames for turbulent measurements, (4) gray levels of 4–8 bits for PTV; 12 bits for observation. Finally, we reviewed the state of the art of high-speed video-image sensors. Currently the standard parallel-readout sensors can operate at 1 Kfps with a pixel count of approximately 1 Kpixels. The In-situ Storage Image Sensor (ISIS) developed by the authors has recently achieved frame rates of 1 Mfps.     

Switching kinetics of ferroelastic ferroelectrics

Switching kinetics of uniaxial ferroelastic ferroelectrics (FFs) in external electric and stress fields is studied using classical theory of nucleation and growth. The stage in which the polarization and deformation reversal involves the main body of the FF and the final stage (Ostwald ripening) of the FF switching are studied with allowance for the change in the repolarization and redeformation during the phase transition. The time dependences of the repolarization and redeformation are found, and equations are derived from which the polarization current and the deformation flux, as well as their time dependence, can be calculated. The calculated main characteristics of the FF switching are compared with the experimental data for switching of Rochelle salt single crystals.     

Thermal conductivity of GaS and GaSe layered semiconductors

This paper reports on the results of experimental investigations into the thermal conductivity of GaS and GaSe layered semiconductor crystals in directions parallel and perpendicular to the crystal layers in the temperature range 5–300 K. Specific features of the thermal conductivity of these crystals are analyzed.     

New Imperfect Conjugate Gradient Algorithm

We present a method which generates conjugate search directions and maintains the quadratic convergence property, when applied to a quadratic function, even when the line searches are not exact. The method is similar to that given by Dixon, but needs one less vector store. When the method is applied to a number of general functions of different dimensionality, results show the efficiency of the method.