Trace element concentrations from São Francisco River - PR analyzed with PIXE technique

Summary Kulcsszavak (angolul, ha nem azonos az elozovel)     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

Polarization-phase mapping and reconstruction of biological tissue architectonics during diagnosis of pathological lesions

Specific features of the formation of local and statistical polarization structures of laser radiation scattered in phase-inhomogeneous layers (PIL) of biological tissue (BT) were studied. The distribution of azimuth and eccentricity of boundary field polarization was found to correlate with the orientation-phase structure of multifractal PIL. A method of polarization phase reconstruction of BT architectonics was suggested.     

Excess noise peaks in porous silicon-based diode structures

Results of an experimental observation of the voltage oscillations associated with a discrete tunneling of holes in porous silicon at room temperature are presented. The noise characteristics of diode structures with a porous silicon interlayer formed on heavily boron-doped silicon single crystals are studied. Peaks of excessive noise are observed at frequencies of ～1 MHz, at which single-electron oscillations should be expected. The peak noise power is found to increase with current according to the ～2.5 power law and, at a current density of 0.15 A/cm², to exceed the noise power of the receiver by three to four orders of magnitude. The complex shape of the noise spectrum and its extension to the higher frequency region with increasing current are explained by the three-dimensionality of the system of nanometer-sized silicon grains embedded in insulating silicon dioxide of porous silicon.     

The high-T c superconductor Sr0.2Lai1.8CuO4: A direct and inverse-photoemission study

We have measured ultraviolet and inverse-photoemission spectra of the novel superconductor Sr₀₂La_1.8CuO₄. Our results compare favorably with recent band-structure calculations for La₂CuO₄.A full account of this work will be published elsewhere [1]     

New hearing threshold measurements for pure tones under free-field listening conditions.

Hearing thresholds for pure tones were measured under free-field listening conditions in the frequency range of 40 Hz-15 kHz. Results are consistent with the standard threshold specified in ISO 226 for frequencies up to 250 Hz, but a few dB below the ISO curve at higher frequencies. Thresholds are distributed normally on a logarithmic level scale with a standard deviation of approximately 5 dB. No significant differences between thresholds of male and female subjects were observed.     

On the problem of stochastic differential inclusions

In this paper we study a stochastic differential equation with multivalued maximally monotone drift operator. Under certain assumptions on the growth of the multivalued operator we prove a theorem on the existence and uniqueness of the solution of such an equation.Translated fromTeoriya Sluchainykh Protsessov, Vol. 15, pp. 54–59, 1987.     

Simulation of electron bunch generation by an ultrashort-pulse high-intensity laser-driven wakefield

Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.