Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source

High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (η) of the InGaP is investigated as a function of the growth temperature. η is as low as 0.22 and almost insensitive to the growth temperature below 460 °C. It increases abruptly around 475 °C and has a maximum value of 0.35 at ≈490 °C. Double crystal X-ray diffraction and a low-temperature photoluminescence spectrum reveal that the present growth method is robust and provides better quality InGaP compared to other state-of-the-art growth technologies. Received: 20 November 2000 / Accepted: 27 January 2001 / Published online: 21 March 2001     

Calculation of transport parameters in KT-1 tokamak edge plasma

The radial profiles of KT-1 tokamak (major radius of 27 cm, minor radius of 4.25 cm, two poloidal stainless-steel limiters) edge plasma parameters are measured using single and triple electric probes. The particle transport parameters are calculated from the measured edge plasma parameters, and the results are analyzed by the simple fluid approximations. The cross-field particle diffusion coefficient (D) in the boundary plasma of the KT-1 is calculated from the density scrape-off length (λ_n) measured by using a triple probe. The particle density and electron temperature fall exponentially in the radial direction with the e-folding length of λ_n=0.13 cm and λ_e=0.41 cm, respectively. From the scrape-off layer (SOL) model, the experimental values of scrape-off length (λ_n) is used to calculate the cross-field diffusion coefficient (D=1.2×10³cm²/s), roughly corresponding to one third of the typical Bohm value. A simple SOL model with the contribution of recombination is introduced to evaluate the Bohm diffusion in the KT-1 tokamak edge plasma. Cross-field heat conductivity calculated from these deduced values is 5.2D in the SOL of KT-1 edge plasma. These results provide the finally certain information for edge particle transport in the KT-1 boundary plasmas.     

Simplified power supply for long pulse CO2 laser using zero cross switching technique

We propose a simple power supply for a longitudinally pulsed CO₂ laser with long pulse duration by the switching control of AC line (60 Hz) on HV leakage transformer primary, which can generate long pulse of about 3 ms compared to a typical pulsed power supply. In this power supply, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching, and AC line voltage switched directly by a SCR is applied to the leakage transformer primary. Thus, there is no need of a rectified bridge and an energy-storage capacitor in the discharge circuit, and the leakage transformer allows one to omit a current-limiting resistor. In order to control the laser output power, the pulse repetition rate is adjusted up to 60 Hz. A ZCS circuit and a PIC one-chip microprocessor are used to control the gate signal of SCR precisely.     

Versatile vacuum chamber for in situ surface X‐ray scattering studies

A compact portable vacuum‐compatible chamber designed for surface X‐ray scattering measurements on beamline ID01 of the European Synchrotron Radiation Facility, Grenoble, is described. The chamber is versatile and can be used for in situ investigation of various systems, such as surfaces, nanostructures, thin films etc., using a variety of X‐ray‐based techniques such as reflectivity, grazing‐incidence small‐angle scattering and diffraction. It has been conceived for the study of morphology and structure of semiconductor surfaces during ion beam erosion, but it is also used for the study of surface oxidation or thin film growth under ultra‐high‐vacuum conditions. Coherent X‐ray beam experiments are also possible. The chamber is described in detail, and examples of its use are given.     

Using a micro-molding process to fabricate polymeric wavelength filters

A procedure for fabricating a high aspect ratio periodic structure on a UV polymer at submicron order using holographic interferometry and molding processes is described. First, holographic interferometry using a He–Cd (325 nm) laser was used to create the master of the periodic line structure on an i-line sub-micron positive photoresist film. A 20 nm nickel thin film was then sputtered on the photoresist. The final line pattern on a UV polymer was obtained from casting against the master mold. Finally, a SU8 polymer was spun on the polymer grating to form a planar waveguide or a channel waveguide. The measurement results show that the waveguide length could be reduced for the waveguide having gratings with a high aspect ratio.     

Spectroscopic,structural and theoretical studies of 2‐methyl‐4‐nitroaniline (MNA) crystal. Electronic transitions in IR

Polarized FT‐IR, Raman, neutron scattering (IINS), and UV‐Vis‐NIR spectra of 2‐methyl‐4‐nitroaniline (MNA) crystal plates, powder, and solutions were measured in the 10–50 000 cm⁻¹ range. The FT‐IR spectrum of deuterated MNA (DMNA) in KBr pellet, the Raman spectrum of the DMNA powder as well as the EPR spectrum of the MNA powder were also recorded. Complete assignments of bands to normal vibrations have been proposed. Density functional theory (DFT) calculations of wavenumbers and potential energy distribution (PED) have been performed to strengthen the assignments. The analysis of vibrational and electronic spectra has revealed vibronic couplings in MNA molecules in solutions and in crystals. In the polarized FT‐IR spectra of the crystal five unusually large bands are observed in MIR and NIR regions. Their origin is discussed in terms of N H···O, C H···O, C H···H N hydrogen bonds, intermolecular charge transfers, electrostatic interactions, and ion radicals formation in the crystal. The role of a methyl group introduction to 4‐nitroaniline is analyzed. The crystal structure of MNA at the room temperature was re‐investigated. Copyright © 2008 John Wiley & Sons, Ltd.     

Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

Chemical reactivity of fluorine molecule (F₂)-germanium (Ge) surface and dissociation of fluorine (F)-Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F₂-treated Ge(1 0 0) substrate and HfO₂ film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C-V curve of HfO₂/Ge gate stack and its C-V hysteresis were decreased by F₂-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO₂ and Ge is sub-oxide layer (GeO_x or HfGeO_x), which is believed to be origin of interface state density.F was incorporated into interfacial layer easily by using F₂-treated Ge substrate. These results suggest that interface defect of HfO₂/Ge gate stack structure could be passivated by F effectively.     

Nonequilibrium Kondo effect and Andreev reflection through double quantum dots with spin-flip scattering

The Kondo effect and the Andreev reflection tunneling through a normal (ferromagnet)-double quantum dots-superconductor hybrid system is examined in the low temperature by using the nonequilibrium Green's function technique in combination with the slave-boson mean-field theory. The interplay of the Kondo physics and the Andreev bound state physics can be controlled by varying the interdot hopping strength. The Andreev differential conductance is mainly determined by the competition between Kondo states and Andreev states. The spin-polarization of the ferromagnetic electrode increases the zero-bias Kondo peak. The spin-flip scattering influences the Kondo effect and the Andreev reflection in a nontrivial way. For the ferromagnetic electrode with sufficiently large spin polarization, the negative Andreev differential conductance is found when the spin flip strength in the double quantum dots is sufficiently strong.     

Random walks and diameter of finite scale-free networks

Dynamical scalings for the end-to-end distance R_ee and the number of distinct visited nodes N_v of random walks (RWs) on finite scale-free networks (SFNs) are studied numerically. 〈R_ee〉 shows the dynamical scaling behavior , where is the average minimum distance between all possible pairs of nodes in the network, N is the number of nodes, γ is the degree exponent of the SFN and t is the step number of RWs. Especially, in the limit t→∞ satisfies the relation , where d is the diameter of network with for γ≥3 or for γ<3. Based on the scaling relation 〈R_ee〉, we also find that the scaling behavior of the diameter of networks can be measured very efficiently by using RWs.