Mathematical analysis of an influenza epidemic model,formulation of different controlling strategies using optimal control and estimation of basic reproduction number

In this article, a deterministic model is formulated to perform a thorough investigation of the transmission dynamics of influenza. In particular, our model takes into account the effects of medication as well as hospitalization. An in-depth stability analysis of the model is performed, and it is subsequently shown that the model is locally, as well as globally asymptotically stable, when R₀ > 1. It is also shown that there exists a unique endemic equilibrium whenever R₀ > 1. After estimating the effective contact rate, we estimate the basic reproduction number, using both an ordinary least squares and generalized least squares methodology. We also estimated confidence intervals for the effective contact rate using parametric bootstrapping. Furthermore, we perform uncertainty and sensitivity analysis to recognize the impact of crucial model parameters on R₀. In addition, using ideas from the optimal control theory, optimal medication and hospitalization strategies are proposed to eliminate the disease.     

A Characterization of Generalized Derivations on Prime Rings

Let R be a noncommutative prime ring, U be the left Utumi quotient ring of R, and k, m, n, r be fixed positive integers. If there exist a generalized derivation G and a derivation g (which is independent of G) of R such that [G(x^m)xⁿ + xⁿg(x^m), x^r]_k = 0, for all x ∈ R, then there exists a ∈ U such that G(x) = ax, for all x ∈ R. As a consequence of the result in the present article, one may obtain Theorem 1 in Demir and Argaç [10 Demir, Ç., Argaç, N. (2010). A result on generalized derivations with Engel conditions on one-sided ideals. J. Korean Math. Soc. 47(3):483–494.[Crossref], [Web of Science ®] , [Google Scholar]].     

First-principles calculations to investigate structural,electronic, optical,and transport properties of half-Heusler VFeZ (Z = N and P) compounds

This research work investigates the structural, electronic, optical, and thermoelectric characteristics of VFeZ (Z = N and P) half-Heusler compounds. The study employs the full-potential linearized augmented plane wave (FP-LAPW) method integrated into the WIEN2K algorithm, serving as the underpinning framework for density functional theory (DFT) analysis. In the study, we use the PBE generalized gradient approximation (PBE-GGA) to identify numerous parameters associated with structural and elastic properties. Lattice parameter results are in agreement with previous outcomes. Moreover, computed elastic parameters satisfy the criterion for stability. In the cubic structure VFeZ (Z = N and P) is ductile, to enhance the computations of electronic characteristics, Tran and Blaha's modified Becke-Johnson potential (TB-mBJ) is used. Our simulations demonstrate that the materials exhibit semiconductor behavior, with a direct band gap for VFeZ (Z = N and P). Strong UV absorption is found via optical experiments suggest compounds are suitable for optical application. Furthermore, study of the thermoelectric properties suggests its application in the thermoelectric generators.     

Enhancement of the electrical properties of carbon nanotubes with Ar–N2 plasma treatment

Optical emission spectroscopy and Langmuir probe are used to investigate the low pressure inductively coupled Ar–N₂ plasmas as function of rf power, filling pressure and Ar content in N₂ discharge. It is observed that the active species generation, dissociation fraction and electron temperature significantly depends on discharge parameters and may be used to optimize the plasma reactor. Mixture of SWCNTs and MWCNTs are treated for different treatment time (0–120 min) at optimum discharge conditions. Changes induced in the elemental composition, surface morphology, crystallographic structure, and structural disorder in the plasma irradiated CNTs are analyzed by EDX, FTIR, SEM, XRD and Raman spectroscopy, respectively. Ar–N₂ mixture plasma treatment of CNTs lead to a significant increase in the electrical conductivity, modify the microstructure and induce structural disorder and cause a transition of crystalline phase from well crystalline to an amorphous structure.     

Influence of tungsten doping concentration on the electronic and optical properties of anatase TiO2

The structural, electronic and optical properties of tungsten-doped TiO₂ have been investigated using density functional theory with plane wave basis sets and ultrasoft pseuodopotential. Substitutional W doping at Ti sites create W 5d states just below the conduction band minimum while interstitial W doping gives isolated W 5d states in the middle of forbidden region. Averaged bond lengths show that W doping at Ti sites produce minimum structural distortion as compared to the interstitial W-doped TiO₂. Substitutional W-doped TiO₂ has better visible light absorption compared to interstitial W-doped TiO₂ and has stable configuration which provide reasonable explanation for the experimental findings. Tungsten doping in TiO₂ with different doping concentrations is investigated as an enabling concept for enhancing the visible light absorption. Optical properties show that optimal W doping concentration would improve the visible light absorption. 2.08% W doping concentration gives strong visible and ultraviolet light absorption among all doped models found consistent with experiments.     

Structural, electronic, and optical properties of ZnOl_xSex alloys using first-principles calculations

The structural, electronic, and optical properties of binary ZnO, ZnSe compounds, and their ternary ZnOl_xSex alloys are computed using the accurate full potential linearized augmented plane wave plus local orbital （FP-LAPW ＋ lo） method in the rocksalt （B 1） and zincblende （B3） crystallographic phases. The electronic band structures, fundamental energy band gaps, and densities of states for ZnO1_xSex are evaluated in the range 0 〈 x 〈 1 using Wu-Cohen （WC） generalized gradient approximation （GGA） for the exchange-correlation potential. Our calculated results of lattice parameters and bulk modulus reveal a nonlinear variation for pseudo-binary and their ternary alloys in both phases and show a considerable deviation from Vegard＇s law. It is observed that the predicted lattice parameter and bulk modulus are in good agreement with the available experimental and theoretical data. We establish that the composition dependence of band gap is semi-metallic in B1 phase, while a direct band gap is observed in B3 phase. The calculated density of states is described by taking into account the contribution of Zn 3d, O 2p, and Se 4s, and the optical properties are studied in terms of dielectric functions, refractive index, reflectivity, and energy loss function for the B3 phase and are compared with the available experimental data.     

Mechanical behavior of Cu-Zr bulk metallic glasses （BMGs）： A molecular dynamics approach

In the present work, three-dimensional molecular dynamics simulation is carried out to elucidate the nanoindentation behaviors of CuZr Bulk metallic glasses (BMGs). The substrate indenter system is modeled using hybrid interatomic potentials including both many-body Finnis Sinclair (FS) and two-body Morse potentials. A spherical rigid indenter (diameter = 60(1 = 10-10 m)) is employed to simulate the indentation process. Three samples of BMGs including Cu25Zr75 , Cu50Zr50 , and Cu75Zr25 are designed and the metallic glasses are formed by rapid cooling from the melt state at about 2000 K. The radial distribution functions are analyzed to reveal the dynamical evolution of the structure of the atoms with different compositions and different cooling rates. The mechanical behavior can be well understood in terms of load-depth curves and Hardness-depth curves during the nanoindentation process. Our results indicate a positive linear relationship between the hardness and the Cu concentration of the BMG sample. To reveal the importance of cooling rate provided during the processing of BMGs, we investigate the indentation behaviors of Cu50Zr50 at three different quenching rates. Nanoindentation results and radial distribution function (RDF) curves at room temperature indicate that a sample can be made harder and more stable by slowing down the quenching rate.     

Flexible semi‐transparent silicon (100) fabric with high‐k/metal gate devices

Can we build a flexible and transparent truly high performance computer? High‐k/metal gate stack based metal–oxide–semiconductor capacitor devices are monolithically fabricated on industry's most widely used low‐cost bulk single‐crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi‐transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state‐of‐the‐art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra‐ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers.