基于局部加密纯无网格法非线性Cahn-Hilliard方程的模拟

为数值求解描述不同物质间相位分离现象的高阶非线性Cahn-Hilliard(C-H)方程,发展了一种基于局部加密纯无网格有限点集法(local refinement finite pointset method,LR-FPM).其构造过程为:1)将C-H方程中四阶导数降阶为两个二阶导数,连续应用基于Taylor展开和加权最小二乘法的FPM离散空间导数;2)对区域进行局部加密和采用五次样条核函数以提高数值精度;3)局部线性方程组求解中准确施加含高阶导数Neumann边值条件.随后,运用LR-FPM求解有解析解的一维/二维C-H方程,分析粒子均匀分布/非均匀分布以及局部粒子加密情况的误差和收敛阶,展示了LR-FPM较网格类算法在非均匀布点情况下的优点.最后,采用LR-FPM对无解析解的一维/二维C-H方程进行了数值预测,并与有限差分结果相比较.数值结果表明,LR-FPM方法具有较高的数值精度和收敛阶,比有限差分法更易数值实现,能够准确展现不同类型材料间相位分离非线性扩散现象随时间的演化过程.     

窄线宽光纤激光器在1030 nm波段实现3 kW近衍射极限输出

基于大模场面积掺镱光纤搭建了全光纤1030 nm高功率窄线宽光纤激光主振荡功率放大系统,实现了3004 W的最高功率输出,斜率效率69.27%,是目前报道的输出功率最高的1030 nm波段近衍射极限光纤激光器。最高输出功率时,x,y方向的光束质量因子分别为1.169,1.174,3 dB光谱宽度为0.18 nm,放大自发辐射抑制比达到37 dB。     

激光惯性约束聚变靶制备技术研究进展

在实验室实现聚变反应释放的能量大于点燃聚变反应所需能量的阈值是当今世界ICF研究的主要目标,实现这一目标仍需要深入研究一系列的关键物理问题。在ICF研究中,制靶能力的发展与提升至关重要,靶的质量是实验成功的核心要素之一。本文介绍了国际ICF靶制备工作近年来在新型烧蚀层材料靶丸、新型靶丸支撑技术、优化黑腔材料与构型以及减小燃料填充管直径等方面取得的一系列进展,并结合ICF物理需求,简要阐述了ICF靶的发展趋势。     

高盐样品中锂的电感耦合等离子体发射光谱法(ICP-OES)测定研究

锂是重要的战略金属和新能源材料,其开发利用受到全球的高度关注。在高盐卤水特别是盐湖卤水和地下卤水中富含巨量的锂资源,在对这些资源进行锂的开发利用过程中,需对锂的含量进行准确测定,然而卤水中共存的高浓度Na+, K+, Ca2+和Mg2+会对微量锂的准确测定产生严重的干扰。电感耦合等离子体发射光谱法(ICP-OES)具有线性范围宽和多元素同步分析能力,针对卤水中锂的快速准确测定,详细开展了高盐样品中锂的ICP-OES分析方法研究。结果表明,锂在610.364 nm处具有较高的信噪比,且Na+, K+, Ca2+, Mg2+和Ar不会对锂的测定产生显著的谱线干扰。然而,样品中大量共存的Na+, K+和Mg2+会对锂的测定产生严重的基体正干扰,而Ca2+产生负干扰。尽管内标法在消除基体干扰方面具有广泛的应用,但传统的以钇和钪为内标元素的内标法不能有效解决该问题。此外,针对标准加入法操作繁琐、不适合批量样品分析问题,以及基体匹配法需多离子匹配,且不适合样品基体组成变化的批量样品分析等问题,考察了采用单一组分进行复杂基体匹配的可行性。由于NaCl广泛存在于卤水中,且对锂的测定具有显著的增敏效应,通过系列研究发现,通过同时向样品和标准溶液中加入10 g·L-1的NaCl,成功解决了总量不超过40 g·L-1的NaCl, KCl和MgCl2所产生的干扰。尽管采用该法或沉淀预分离方式均不能消除Ca2+产生的负干扰,但当样品中Ca2+含量不高于1.8 g·L-1时,对测定不产生显著的影响。通过采用该方法对三种不同基体组成的卤水样品进行加标回收测定,其回收率在96.60%~104.20%范围内。此外,通过与电感耦合等离子体质谱法(ICP-MS)测定结果进行对比,充分论证了该法的准确性和可靠性(相对误差±3.66%)。该法仅以单一的NaCl进行复杂基体匹配,不仅简化了操作,还实现了基体组成变化的批量样品分析,因而在卤水中锂的快速准确测定及锂资源开发利用方面具有重要意义。     

基于石墨烯/石墨烯卷轴复合薄膜高灵敏度柔性压力传感器

一维导电材料例如纳米线,大量应用于柔性压力传感器中. 但是一维材料和基底之间接触时相互作用力较弱,使得传感器灵敏度、响应时间、和循环寿命等性能指标有待进一步提高. 针对这些问题,设计了石墨烯/石墨烯卷轴多分子层复合薄膜作为传感器导电层. 石墨烯卷轴具有一维结构,而石墨烯的二维结构可以牢固地固定卷轴,以确保高导电性复合薄膜与基底之间的粘附性,同时整体结构的导电通道得到了增加. 由于一维和二维结构的协同效应,实现了应变灵敏度系数3.5 kPa^-1、 响应时间小于50 ms、能够稳定工作1000次以上的压阻传感器.     

M2B7-(M=Mg,Zn)团簇的双重芳香性促进Mg-Mg和Zn-Zn单键的形成

本文使用密度泛函理论设计了两个无需配体的具有Mg-Mg和Zn-Zn单键的团簇Mg₂B₇^-和Zn₂B₇^-. 这两种团簇的全局能量最低构型均以M₂²⁺(B₇^3-)的形式存在,其中M-M单键处于准平面六边形形状的B₇部分的上方. 化学键分析证实了这些团簇中Mg-Mg和Zn-Zn单键的存在,这些单键是在异常稳定的B₇^3-的驱动下生成的. 该B₇^3-部分同时具有σ和π双重芳香性. 计算得到Mg₂B₇^-和Zn₂B₇^-的垂直跃迁能分别为2.79 eV和2.94 eV.     

OCS经由F 31Π里德堡态生成CO(X1Σ+)+S(1D2)产物的波长相关性光解离

本文利用时间切片离子速度成像技术在134∽140 nm波段研究了OCS分子经由F 3¹Π里德堡态的真空紫外光解离动力学. 在选取的5个分别对应OCS(F 3¹Π, v₁=0∽4)的伸缩振动激发的光解波长,实验测得了来自CO(X¹Σ⁺)+S(¹D₂)产物通道的SS(¹D₂))实验影像,并获得了总平动能谱和CO(X¹Σ⁺, v)共生产物的振动布居及角分布. 结果分析表明OCS分子解离生成CO(X¹Σ⁺)+S(¹D₂)产物的过程经历了上态F 3¹Π 与C_?v和C_s构型的下电子态间非绝热耦合过程. 实验结果显示了很强的波长相关性：OCS (F 3¹Π, v₁)的较低转动激发态(v₁=0∽2)和较高转动激发态(v₁=3, 4)的CO(X¹Σ⁺)产物的振动布居和角分布具有显著差异,表明该解离过程中具有不同的解离机理. 本结果提供了振动耦合可能对真空紫外光解离动力学产生关键作用的相关证据.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

An improved evaluation of the neutron background in the PandaX-Ⅱ experiment

In dark matter direct detection experiments,neutron is a serious source of background,which can mimic the dark matter-nucleus scattering signals.In this paper,we present an improved evaluation of the neutron background in the PandaX-II dark matter experiment by a novel approach.Instead of fully relying on the Monte Carlo simulation,the overall neutron background is determined from the neutron-induced high energy signals in the data.In addition,the probability of producing a dark-matter-like background per neutron is evaluated with a complete Monte Carlo generator,where the correlated emission of neutron(s)andγ(s)in the(α,n)reactions and spontaneous fissions is taken into consideration.With this method,the neutron backgrounds in the Run 9(26-ton-day)and Run 10(28-ton-day)data sets of PandaX-II are estimated to be(0.66±0.24)and(0.47±0.25)events,respectively.     

A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface

A metal-graphene hybrid metasurface polarization converter is designed in this Letter.The unit cell of the hybrid metasurface is composed of a butterfly-shaped structure whose branches are connected by multi-layer graphene sheets.The proposed device can be reconfigured from linear-to-circular polarization to cross-polarization by changing the Fermi energy of graphene.The simulation results show that for three-layer graphene,the device acts as a linear-to-circular polarization converter when EF=0 eV and switches to a cross-polarization converter when EF=0.5 eV.Compared with single-layer graphene,the device with three-layer graphene can maintain the cross-polarization conversion performance under low Fermi energy.Furthermore,two equivalent circuits in the x and y directions are developed to understand the working mechanism of the device.