Generating solutions of Einstein's field equations by typing mistakes

A solution to Einstein's field equations is presented that represents a Petrov type II electromagnetic null field with one Killing vector. This solution generalizes a vacuum solution previously discovered by Hoenselaers. The solution was found by the peculiar method of generalizing a member of this class inadvertently discovered by making a typing error when checking the vacuum solution with the computer algebra system SHEEP.     

On Λ(p)-subsets of squares

This paper is a follow up of [B₁]. It is shown that the sequence of squares {n ²|n=1, 2, ...} contains Λ(p)-subsets of “maximal density”, for any givenp>4. The proof is based on the probabilistic method developed in [B₁] and a precise estimate of the Λ(p)-constant for the sequence of squares itself. Analogues of this phenomenon are obtained for other arithmetic sets, such as the sequence ofkth powers {n ^k |n=1, 2, ...} or the sequence of prime numbers. Sections 2 and 3 of the paper are of independent interest to orthogonal system theory.     

A characterization of cardinalsκ such that 2λ = 2κ wheneverκ ≦λ < 2κ

We characterize cardinalsκ such that 2^λ = 2^κ wheneverκ ≦λ < 2^κ using ideals in small algebras of sets satisfying certain completeness and saturation conditions. Research of this author was supported by an NSF Grant.     

Influence of SiO2 in SiCp on the microstructure and impact strength of Al/SiCp composites fabricated by pressureless infiltration

The effect of SiO₂ in SiC_p and the following processing parameters on the microstructure and impact strength of Al/SiC_p composites fabricated by pressureless infiltration was investigated: Mg content in the aluminum alloy, SiC particle size, and holding time. Preforms of SiC_p in the form of rectangular bars (10 × 1 × 1 cm) were infiltrated at 1150°C in an argon→nitrogen atmosphere for 45 and 60 min by utilizing two aluminum alloys (Al-6 Mg-11 Si and Al-9 Mg-11 Si, wt.%). The results obtained show that the presence of SiO₂ in SiC affects the microstructure and impact strength of the composites significantly. When Al₄C₃ is formed, the impact strength decreases. However, a high proportion of SiC to SiO₂ limits the formation of the unwanted Al₄C₃ phase in the composites. Also, a higher content of Mg in the Al alloy lowers the residual porosity and, consequently, increases the composite strength. The impact strength grows with decrease in SiC particle size and increases considerably when the residual porosity is less than 1%. Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 42, No. 3, pp. 401–418, May–June, 2006.     

Plasma effects and the modulation of white light spectra in the propagation of ultrashort, high-power laser pulses in barium fluoride

We report the results of a study of white light generation in a 7.5 cm long crystal of a high band-gap material, barium fluoride, using ultrashort (<42 fs) laser pulses over a range of values of incident laser power that extend up to more than three orders of magnitude larger than the critical power for self-focusing (P_cr). We explore white light generation and the intensity and spectral distributions within filaments that are formed as a result of the interplay of self-focusing and plasma-induced defocusing. The onset of plasma effects occurs at power levels in excess of 7 GW for ultrashort pulses in BaF₂. For incident power levels that are three orders of magnitude larger than the critical power, blue-shifting of the incident laser wavelength is observed in addition to asymmetric continuum generation. The blue shift enables us to estimate the temporal variation of the electron density in the plasma that is generated within the BaF₂ crystal. PACS 52.38.Hb; 42.65.Jx; 42.65.Tg; 33.80.Wz; 52.35.Mw     

Demineralisation of a semianthracite char with molten salts/HCl: A study by X-ray diffraction

The effects of chemical heat treatments of a semianthracite char (AC) on the composition of the mineral fraction of the material are investigated. The starting char was first treated with a mixture of LiCl/KCl or LiCl/KCl/CaO at 743, 873 or 1173 K and the products obtained were then washed thoroughly with distilled water. A small fraction of these samples were treated with 10⁻³ M HCl solution. The composition changes were studied by X-ray diffraction. The predominant mineral components initially present in the starting char are quartz, mullite, muscovite and/or kaolinite and oldhamite. The treatments of AC resulted in significant changes in the mineral fraction of the material, in particular when LiCl/KCl/CaO was used. In this case, spurrite, γ-calcium orthosilicate and gehlenite were formed, which were eliminated by treatment with 10⁻³ M HCl solution.     

Ion implantation induced by Cu ablation at high laser fluence

High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 × 10⁶ J/cm², the maximum ion energy was about 600 keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis.