HD isotope effect on the dihydrogen bond of NH+4...BeH2 by ab initio path integral molecular dynamics simulation

In order to investigate the HD isotope effect on a dihydrogen bonded cation system, we have studied NH+4...BeH2 and its isotopomers by ab initio path integral molecular dynamics. It is found that the dihydrogen bond can be exchanged by NH+(4) rotation. The deuterated isotopomer (ND+(4)...BeD(2); DD) can exchange the dihydrogen bond more easily than other isotopomers such as (NH+4...BeH2; HH). This unusual isotope effect is ascribed to the "quantum localization" which occurs when the effective energy barrier for the rotational mode becomes higher by the zero point energy of other modes. We also found that the binding energy of dihydrogen bonds for DD species is the smallest among the isotopomers.     

An anion-exchange chromatographic study on boron isotopic fractionation at 2 MPa at 293 K

To study boron isotopic fractionation at high pressure, column chromatography operated in the breakthrough manner was performed at 2.0 MPa at 25.0 degrees C. The fractionation factor (S) between boron adsorbed onto strongly basic anion-exchange resin and boron in solution was obtained as 1.013, which was smaller than the values at 0.1 MPa (atmospheric pressure) found in literature. The pressure dependence of S was discussed based on the polymerization of boron in the solution and resin phases and on the occurrence of the pressure dependent isotope effect relating to the molar volume changes of boron species upon isotope substitution.     

光刻技术:发展路径及未来趋势

光刻技术在半导体器件大规模生产中发挥重要作用.今天,多数先进半导体生产都已经应用ArF准分子激光浸润光刻技术.双重图像曝光和侧壁图像转移技术使ArF准分子激光浸润光刻技术延伸到32纳米半节距(HP)器件的制造成为可能.为了制造更小尺寸的器件,必须开发新的制造工艺.极端紫外线光刻是制造22纳米半节距甚至更小尺寸半导体器件的先进下一代光刻技术解决方案.另外,其他技术解决方案,如纳米压印光刻技术和无掩模直描光刻技术等也被考虑用于制造更小节点尺寸的器件,但是目前这些方案仅仅处在研发阶段,而且在现阶段就已经呈现出在大规模生产中的诸多困难.本文从材料的角度对光刻技术进行一个整体描述,并对光刻技术未来趋势进行讨论.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Inorganic Oxide Films

Structural changes stimulated by ultraviolet (UV) laser irradiations of sol-gel derived inorganic oxide films were investigated. Dried gel films of TiO₂, Nb₂O₅, Ta₂O₅, SrTiO₃ and Pb(Zr _x Ti_1–x )O₃ (PZT) were found to be crystallized by the laser irradiation. On the other hand, the photo-induced change in gel films of BaTiO₃, LiNbO₃ and LiTaO₃ was not observed although the laser beams were absorbed in the films. These sol-gel films were thermally crystallized at almost the same temperature around 600–700°C except TiO₂. Thus, the UV-laser-induced crystallization is not directly ascribed to a simple thermal effect with the irradiation. Photochemical properties of the cations are assumed to be important for the change in sol-gel films.     

Mechanism of Oxygen Adsorption on Partially K Exchanged Na-A Type Zeolite

Accordingly, the observation of oxygen selectivity on Na-K-A would indicate that nitrogen has a greater steric hindrance at the window than does oxygen. Using single crystal X-ray diffraction (SCXD), it was confirmed that K at 8-member rings was relocated to 6-member rings and that the location of Na at 8-member rings became uncertain with calcination. It was also observed that Na-K-A was thermally more stable than Na-A. Using magic angle spin nuclear magnetic resonance (MAS-NMR), it was confirmed that Na at 8-member rings irreversibly changed location from a symmetric position to an asymmetric position with calcination.Using the atomic positions determined by SCXD, the mean square displacements (MSD) of oxygen and nitrogen inside the crystal of Na-A and Na-K-A were estimated by means of molecular dynamic simulation (MD). When temperature was decreased, the MSD of nitrogen was reduced to a greater extent than that of oxygen and the MSD of nitrogen inside Na-K-A was reduced by a greater margin than that inside Na-A.     

Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp

Structural changes in sol-gel films with photo-irradiation were investigated using zinc oxide (ZnO) derived from zinc acetate. The exposure of the films to an ultraviolet lamp induced hexagonal ZnO crystals in a relatively dense amorphous structure. On the other hand, the formation of zinc metal was found in a porous gel film. The photo-induced crystallization and reduction are ascribed to the electronic excitation in the metastable non-crystalline states.     

INTERACTION OF RHODOPSIN, G-PROTEIN AND KINASE IN OCTOPUS PHOTORECEPTORS

Light induced phosphorylation of octopus rhodopsin was greatly enhanced by guanosine 5'-O-(3-thiotriphosphate) (GTP gamma S), suggesting that the kinases are involved in regulating interaction between rhodopsin and G-protein. We determined phosphorylated peptides of octopus rhodopsin in the presence or absence of GTP gamma S. Possible phosphorylation sites for octopus rhodopsin enhanced by GTP gamma S were Thr329, Thr330 and/or Thr336, which suggest that the G-protein associates with cytoplasmic loops including C-terminal peptide in the seventh helix of octopus rhodopsin.     

Geometrical H/D isotope effect on hydrogen bonds in charged water clusters

To investigate the proton/deuteron geometrical isotope effect of positively and negatively charged water complexes, H5O2+ and H3O2-, we have carried out accurate ab initio path integral simulations considering the electron correlation effect. It has been found that the isotope effect on the hydrogen bond is different between these two species in that the oxygen separation becomes shorter in H5O2+ while longer in H3O2- by deuteron substitution. This behavior is ascribed to the change in the quantum effect of hydrogen bonds whether the shared hydrogen is on a single or double well potential surface.     

Sol-Gel Formation of ITO Thin Film from a Sol Including ITO Powder

Recently, low temperature synthesis of ITO thin film of low resistivity is desired in the field of LCD (Liquid Crystalline Display) production. This paper describes the results of experiment to produce ITO thin film from a sol containing crystalline ITO particles and alkoxides of In and Sn. Crystallization temperature of ITO thin film obtained from the sol mixed with ITO powder was lower than that of ITO from the sol without ITO powder. Furthermore, the resistivity of the former ITO thin film was lower than that of the latter. It was assumed that these results were attributed to the promotion effect of ITO crystalline particles to crystalize the amorphous ITO gel at lower temperature. This low temperature crystallization effect plays an important role in enhancing the crystallinity and electric conductivity of ITO thin film from sol-gel process.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Indium Oxide Films

Modification of sol-gel derived indium oxide thin films using ultraviolet lasers was investigated. Irradiation by an ArF excimer (6.4 eV) and the fourth harmonic generation of a Nd : YAG laser (4.7 eV) was found to be effective in crystallization with a loss of hydroxyl groups and a decrease in the sheet resistance of the sol-gel films. Transparent crystalline indium oxide films were successfully obtained by 6.4 eV laser irradiation at fluences below 20 mJ/(cm2·shot), whereas degradation of the films was induced by a relatively high-fluence beam.