Deep trench etching in macroporous silicon

We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally. PACS 82.45.Yz; 81.16.-c     

Electron transfer at lanthanum endohedral fullerenes

The aim of this contribution is to study lanthanum containing fullerenes produced and treated under different conditions. The work was done using solid soot extract giving poorly resolved ESR spectra or separated lanthanofullerenes in solution showing well resolved ESR spectra. ESR experiments in connection with the mass spectrometry give information on the electronic states due to the electron transfer from the endohedral metal to the fullerene cage and the influence of oxygen on endohedral lanthanofullerene. The analysis of ESR spectra indicates the presence of up to nine octets of lanthanum containing fullerenes. These species have different stabilities. Furthermore, a very narrow single ESR line in the lanthanofullerene spectrum was detected having a linewidth ΔB=0.008 mT and ag-factor 2.0025. The electron transfer to the endohedral La@C₈₂ molecule studied by voltammetry and electrochemicalin situ ESR experiments is described. The interaction of the lanthanofullerene with oxygen in solution is also studied. In different solvents the influence of oxygen on line broadening in the ESR spectra of La@C₈₂ was observed.     

Ions and atoms in superfluid helium (4He)

We review the previous conclusion [J.Y. Ryu, Y.C. Chung and S.D. Choi, Phys. Rev. B 32, 7769 (1984)] that the trace property Tr(ABC) = Tr(CAB) leads to two different cyclotron transition absorption formulae in the electron-phonon systems in the lowest order approximation. The pictorial expression and the calculated linewidths in Ge and Si show that the socalled EWC scheme is more seeming than the socalled MWC scheme. The difference is expected to disappear if we take into account all the higher order perturbation terms or start with the many body formalism in the complete scheme.     

Spectral expansions of some representations of Lie groups

We investigate representations of classical noncompact Lie groups induced by representations of the maximal parabolic subgroup. Formulas are obtained for 5O₀(2p, 2q)/U(p, q) and U(2p, 2q) Sp(p, q).Translated from Ukrainskii Mathematicheskii Zhurnal, Vol. 42, No. 1, pp. 128–131, January, 1990.     

Magnetic excitations in the quasi one-dimensional antiferromagnetic singlet groundstate system CsFeBr3

We have measured the magnetic excitations in CsFeBr₃ along the chain direction (z-axis) and perpendicular to it by inelastic neutron scattering. The measured dispersion curves can be reproduced by the formula $$\omega ^2 (q) = A^2 - 8A[J\cos (\pi q_c ) + J'\gamma (2\pi q_ \bot )]R(T)$$ which is very different from dispersion relations for usual 1 D antiferromagnets, because of the singlet groundstate of this system. The large value of the anisotropy energyA/k=29.8±0.5 K, which is independent of temperature, causes the singlet groundstate. The intra-and inter-chain exchange parameters areJ/k=?3.2±0.15K andJ'/k=?0.32±0.02 K determined atT=1.4 K. At 1.4 K the renormalisation factor is taken to beR(T)=1. AtT=30 K the value forR(T) was found to be 0.5±0.1 keepingJ andJ' unchanged. The excitations at (1/3 1/31) show soft mode behaviour but no phase transition. The observed intensities are interpreted by a heuristic model for the eigenvectors in the excited state including antiferro-as well as ferromagnetic configurations of the fluctuations.     

Exciton-related optical nonlinearities in semiconductors and semiconductor microcrystallites

We report on large optical nonlinearities due to specific many-body effects in high-density electron-hole pair systems. On bulk CdS we study the effect of free-carrier screening on the absorption and refraction in the vicinity of the band-gap at room temperature. Steady-state saturable absorption at mW-power levels and four-wave mixing with first-order efficiencies as large as 2% of the incoming light are demonstrated on a 1m slab. On CuBr microcrystallites embedded in glass we investigate the changes of the exciton absorption caused by many-exciton effects both at cryo and room temperature. In contrast to bulk semiconductors, we observe a blue shift of the exciton peak at resonant optical excitation. In addition, strong saturation of absorption with very large contrast shows up. We find Lorentzian saturation intensities in the 100 kW/cm² range.     

The magnetic moment of the 10+ isomer in140Ce andE1 transitions inN=82 isotones caused by outer subshell configurations

Using the reaction¹³⁸Ba(α,2n)¹⁴⁰Ce the magnetic moment of the 10 ₁ ⁺ isomer atE _x =3714.7 keV in theN=82 nucleus¹⁴⁰Ce has been determined by means of the TDPAD method toμ=+10.3(4)μ _N . Measuredg-factors in¹⁴⁰Ce are compared to calculations within the shell model with configuration mixing. For the 10 ₁ ⁺ isomer in¹⁴⁰Ce the four proton configuration π(1g ₇ ^2/2 ,2d ₅ ^2/2 ) has been found to be dominant. From theg-factor measurement strong contributions of multiparticle excitations to thegp2d _3/2,π3s ₁ ² or π1h ₁₁ ² shells and admixtures of neutron excitations to the wave function of the 10 ₁ ⁺ state could be excluded. The strongE1γ-branch of the deexcitation of the 10 ₁ ⁺ isomer in¹⁴⁰Ce can be explained by means of small admixtures of configurations which contain the outer subshell excitationsπ2f _7/2 andπ1h _9/2. On this basisE1 transitions experimentally observed in theN=82 nuclei¹⁴⁰Ce,¹⁴¹Pr and¹⁴⁵Eu may be understood.     

New aspect in transient magnetic fields using heavy ion beams

Transient field precessions have been measured with the first excited 2 ₁ ⁺ -state as probe for ions of²⁸Si traversing Fe at v_ion?1v₀ and 13v₀(v₀=c/137) and⁶²Ni being stopped in Fe. The degree of polarization deduced for the Si ions, p_1s=0.19(6), is consistent with low-velocity data. There is clear evidence that the field strength is attenuated by heavy ion beams. For the⁶²Ni(2 ₁ ⁺ ) state at 1.173 MeV a g-factor value of g=0.34(7) was obtained in good agreement with a previous result.