Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications

We propose a selector‐less Pr_0.7Ca_0.3MnO₃ (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ_eff), i.e., self‐formed Schottky barrier. In addition, a scalable 4F² selector‐less cross‐point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high‐density memory applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Adaptive ANOVA decomposition of stochastic incompressible and compressible flows

Realistic representation of stochastic inputs associated with various sources of uncertainty in the simulation of fluid flows leads to high dimensional representations that are computationally prohibitive. We investigate the use of adaptive ANOVA decomposition as an effective dimension–reduction technique in modeling steady incompressible and compressible flows with nominal dimension of random space up to 100. We present three different adaptivity criteria and compare the adaptive ANOVA method against sparse grid, Monte Carlo and quasi-Monte Carlo methods to evaluate its relative efficiency and accuracy. For the incompressible flow problem, the effect of random temperature boundary conditions (modeled as high-dimensional stochastic processes) on the Nusselt number is investigated for different values of correlation length. For the compressible flow, the effects of random geometric perturbations (simulating random roughness) on the scattering of a strong shock wave is investigated both analytically and numerically. A probabilistic collocation method is combined with adaptive ANOVA to obtain both incompressible and compressible flow solutions. We demonstrate that for both cases even draconian truncations of the ANOVA expansion lead to accurate solutions with a speed-up factor of three orders of magnitude compared to Monte Carlo and at least one order of magnitude compared to sparse grids for comparable accuracy.     

Observation of D+(s)K- and evidence for D+(s)pi- final states in neutral B decays

We report the first observation of a B meson decay that is not accessible by a direct spectator process. The channel B(0)-->D(+)(s)K- is found in a sample of 85 x 10(6) BB; events, collected with the Belle detector at KEKB, with a branching fraction B(B(0)-->D(+)(s)K-)=(4.6(+1.2)(-1.1)+/-1.3) x 10(-5). We also obtain evidence for the B0-->D(+)(s)pi(-) decay with branching fraction B(B0-->D(+)(s)pi(-))=(2.4(+1.0)(-0.8)+/-0.7) x 10(-5). This value may be used to extract a model-dependent value of |V(ub)|.     

Nanoscale formation mechanism of conducting filaments in NiO thin films

We have studied the nanoscale electrical properties of NiO thin films by using conducting atomic force microscopy (CAFM) to understand the mechanism of resistance change of the NiO thin films as we changed the applied voltage. We observed that inhomogeneous conducting filaments were generated by external voltage bias; in addition, some of the inhomogeneous conducting filaments were durable while some of them were not, and they disappeared. We deduced that the resistance change of the NiO thin films was related to inhomogeneous filamentary conducting paths generated by both Ni ions in thermodynamically unstable NiO and the existence of conducting filament segments generated by high voltage bias.     

Orbital-driven electronic structure changes and the resulting optical anisotropy of the quasi-two-dimensional spin gap compound La4Ru2O10

We investigated the electronic response of the quasi-two-dimensional spin gap compound La4Ru2O10 using optical spectroscopy. We observed the drastic changes in the optical spectra as the temperature decreased, resulting in anisotropy in the electronic structure of the spin-singlet ground state. Using the orbital-dependent hopping analysis, we found that orbital ordering plays a crucial role in forming the spin gap state in the non-one-dimensional material.     

Measurement of B(0)(d)-B_(0)(d) mixing rate from the time evolution of dilepton events at the upsilon(4S)

We report a determination of the B(0)(d)-&B_(0)(d) mixing parameter Deltam(d) based on the time evolution of dilepton yields in Upsilon(4S) decays. The measurement is based on a 5.9 fb(-1) data sample collected by the Belle detector at KEKB. The proper-time difference distributions for same-sign and opposite-sign dilepton events are simultaneously fitted to an expression containing Deltam(d) as a free parameter. Using both muons and electrons, we obtain Deltam(d) = 0.463+/-0.008 (stat)+/-0.016 (syst) ps(-1). This is the first determination of Deltam(d) from time evolution measurements at the Upsilon(4S). We also place limits on possible CPT violations.     

Structure of the Ba-induced Si(111)- (3 x 2) reconstruction

The Ba/Si(111) surface, previously known as a 3 x 1 phase, is found to have a 3 x 2 periodicity and a semiconducting band gap. The substrate reconstructs into the honeycomb chain-channel (HCC) structure with Ba atoms in the channel, as in the alkali-metal-induced Si(111)-(3 x 1). However, the metal coverage is determined to be 1/6 monolayers, half the alkali-metal coverage. We propose that the structure and the metal coverage determined for the Ba adsorbate is universal for other alkaline-earth-metal adsorbates. With the alkali-metal-induced 3 x 1 case, our results lead to a rule that one donated electron per 3 x 1 surface unit is necessary to stabilize the HCC reconstruction of Si.     

Iterative method for dynamic condensation combined with substructuring scheme

An iterated improved reduced system (IIRS) procedure combined with substructuring scheme for both undamped and nonclassically damped structures is presented. Iterated IIRS method is an efficient reduction technique because the highly accurate eigenproperties from the repeatedly updated condensed matrices can be obtained without consuming expensive computational cost. However, single domain direct approach of this method to large structures requires much computational resources and even makes analysis intractable in the case only limited computer storage is available. These problems can be overcome by combining the substructuring scheme with IIRS procedure. The newly developed IIRS method combined with a substructuring scheme can provide an efficient methodology for large-scale eigenvalue problems. The validation of the present method and the evaluation of computational efficiency are demonstrated through the numerical examples.