Polarized Spacetime Foam

An approximate model of a spacetime foam is presented. It is supposed that in the spacetime foam each quantum handle is like to an electric dipole and therefore the spacetime foam is similar to a dielectric. If we neglect of linear sizes of the quantum handle then it can be described with an operator containing a Grassman number and either a scalar or a spinor field. For both fields the Lagrangian is presented. For the scalar field it is the dilaton gravity + electrodynamics and the dilaton field is a dielectric permeability. The spherically symmetric solution in this case give us the screening of a bare electric charge surrounded by a polarized spacetime foam and the energy of the electric field becomes finite one. In the case of the spinor field the spherically symmetric solution give us a ball of the polarized spacetime foam filled with the confined electric field. It is shown that the full energy of the electric field in the ball can be very big.     

Exfoliation of Coatings from Silicon Crystals Electroless-Plated with Nickel and Electroplated with Gold

The microhardness and content of carbon in electroplated gold coatings were studied as influenced by the operation time of citrate and citrate-phosphate gold-plating electrolytes. Such physicomechanical properties as porosity, microhardness, internal stress, plasticity, and microstructure of electroless-plated and electroplated nickel coatings were studied and analyzed.     

An Inverse Problem for a Model of a Hierarchical Structure

We consider the inverse problem for the identification of the coefficient in a parabolic equation. The model is applied to describe the functioning of a hierarchical structure [1]; it is also relevant for heat-conduction theory [2]. Unique solvability of the inverse problem is proved.     

Radiation bursts from particles in the field of compact, impenetrable, astrophysical objects

The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.     

Surface grating formation and erasing on a-Se films

Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001     

Quantum-well states and resonances in thin single-crystal layers of noble metals on W(110) substrates

This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.