Electrical and optical characteristics of porous silicon impregnated with LaF3 by a novel chemical bath technique

The structural, electrical and optical characteristics of porous silicon (PS) due to the impregnation of LaF₃ into PS by a novel chemical-bath deposition (CBD) technique have been investigated in this article. Without removing the PS from the anodization chamber the impregnation with LaF₃ has been done by reacting LaCl₃ with HF in the same chamber at room temperature. The impregnation of LaF₃ was confirmed by the SEM on the cross-section of the LaF₃/PS/Si system and EDX. The modification of PS surface by LaF₃ had direct influence on the electrical and optical properties of PS. Electrical properties of Ag/LaF₃/PS/p-Si/Ag structures were studied through the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Formation of metal-insulator-semiconductor (MIS) diode was evident whose forward current increased with annealing. A diode factor of about 2.4 has been obtained for the annealed heterostructure indicating a high density of trap states. The C⁻²-V curves of all samples showed negative flat band voltage of around −2 V confirming a large number of fixed positive charges in the LaF₃. The photoluminescence (PL) intensity of the LaF₃-impregnated PS showed aging for the as-deposited samples, but when annealed PS structure recovered the PL intensity. Experimental results show that the optimized chemical bath passivation process for the LaF₃ on porous silicon could enable the porous silicon to be an important material for photonic application.     

High Performance (fT~500GHZ) In0.52Al0.48As/In0.53Ga0.47As/InP Quantum Wire MODFETs Employing Asymmetric Coupled-Well Channels

A coupled-well InAlAs/InGaAs quantum wire MODFET structure is proposed, for which simulations predict improved frequency performance (>500 GHz), over a wider range of V_g, as compared to well/wire devices with a standard MODFET heterointerface. A comparison of several transverse potential well profiles, obtained by varying the placement of a thin barrier within a 100 Å finite well, is presented. In all cases, the quantum wires consist of a 0.1 m long channel and a 150 Å finite-square-well lateral profile. It has been found that the peak of the electron distribution for the first confined state, as measured from the heterointerface, changes dramatically depending on the location of the thin barrier. For quantum wire structures, realized in the lattice matched system of In_0.52Al_0.48As/In_0.53Ga_0.47As/InP, a change in the barrier location of 25 Å is accompanied by a shift in the carrier peak of more than 40 Å (~20 Å closer to or farther from the spacer-well interface than in the standard MODFET profile). Implications of this are reflected in the current-voltage characteristics (I_d-V_d) and frequency responses (f_T-V_g) of the proposed structures.     

Polarization-insensitive nonlinear optical loop mirror demultiplexer with twisted fiber

We experimentally demonstrate reduction of the polarization sensitivity of a nonlinear optical loop mirror (NOLM) from 5 to 0.5 dB by use of 550 m of twisted dispersion-shifted fiber with a twist rate of 8 turns/m (24 turns/beat length). The twisting of the fiber induces circular birefringence and equates the parallel-and the orthogonal-polarization nonlinear phase-shift terms. Experimental results show that the polarization sensitivity monotonically decreases from 5 dB for nontwisted fiber to 0.5 dB for fiber that is twisted at a rate of 8 turns/m, and the twist rate should be more than 4 turns/m (>10 turns/beat length) for emulation of circularly polarized fiber. The minimum polarization sensitivity occurs when the control-pulse polarization is aligned with one of the eigenmodes of the twisted fiber. With the fiber twisted at a rate of 8 turns/m in the NOLM, the nonlinear transmission is 23% at a switching energy of 4 pJ/pulse. Simulations confirm the observed behavior and show that the remaining polarization sensitivity results from energy transfer between orthogonal modes of the signal pulse.     

Tailoring the optical and magnetic properties of La-BaM hexaferrites by Ni substitution

We investigate the impact of Ni insertion on the structural,optical,and magnetic properties of Ba_0.8La_0.2Fe_12-xNi_xO₁₉hexaferrites(Ni substituted La-BaM hexaferrites).Samples were prepared using the conventional co-precipitation method and sintered at 1000℃for 4 hours to assist the crystallization process.An analysis of the structure of the samples was carried out using an x-ray diffraction(XRD)spectrometer.The M-type hexagonal structure of all the samples was confirmed using XRD spectra.The lattice parameters a and c were found to be in the ranges of 5.8925±0.001 nm–5.8952±0.001 nm and 23.2123±0.001 nm–23.2219±0.001 nm,respectively.The M-type hexagonal nature of the prepared samples was also indicated by the presence of corresponding FT-IR bands and Raman modes in the FT-IR and Raman spectra,respectively.EDX results confirmed the successful synthesis of the samples according to the required stoichiometric ratio.A UV-vis spectrometer was used to record the absorption spectra of the prepared samples in the wavelength range of 200 nm–1100 nm.The optical energy bandgap of the samples was found to be in the range of 1.21 eV–3.39 eV.The M–H loops of the samples were measured at room temperature at an applied magnetic field range of 0 kOe–60 kOe.A high saturation magnetization of 99.92 emu/g was recorded in the sample with x=0 at a microwave operating frequency of 22.2 GHz.This high value of saturation magnetization is due to the substitution of La3+ions at the spin-up(12k,2a,and 2b)sites.The Ni substitution is proven to be a potential candidate for the tuning of the optical and magnetic parameters of M-type hexaferrites.Therefore,we suggest that the prepared samples are suitable for use in magneto-optic applications.     

Strategies for synthesis of 1,2,4-triazole-containing scaffolds using 3-amino-1,2,4-triazole

Molecular Diversity - 1,2,4-Triazole-containing scaffolds are unique heterocyclic compounds present in an array of pharmaceuticals and biologically important compounds used in the drug-discovery...     

PANI-Fe3O4@ZnO nanocomposite as magnetically recoverable organometallic nanocatalyst promoted synthesis of new Azo chromene dyes and evaluation of their antioxidant and antimicrobial activities

Molecular Diversity - A new series of azo chromene dyes were synthesized via a facile cyclocondensation reaction of (E)-1,2-diphenyl-1-diazene and 4-aminocoumarin with 1:2 molar ratio catalyzed by...     

Design and synthesis of phenoxymethybenzoimidazole incorporating different aryl thiazole-triazole acetamide derivatives as α-glycosidase inhibitors

Molecular Diversity - A novel series of phenoxymethybenzoimidazole derivatives (9a-n) were rationally designed, synthesized, and evaluated for their α-glycosidase inhibitory activity. All...     

Synthesis of fish scale derived hydroxyapatite silica propyl bis aminoethoxy ethane cuprous complex (HASPBAEECC) as a novel hybrid nano-catalyst for highly efficient synthesis of new benzimidazole-1,2,3-triazole hybrid analogues as antifungal agents

Molecular Diversity - The preparation, characterization and application of hydroxyapatite silica propyl bis aminoethoxy ethane cuprous complex (HASPBAEECC) as a novel hybrid nano-catalyst for...     

N2O同位素的紫外光解：同位素分馏和产物的转动量子态分布

采用时间依赖的量子波包法研究¹⁴N¹⁴N¹⁶O、¹⁴N¹⁵N¹⁶O、¹⁵N¹⁴N¹⁶O、¹⁵N¹⁵N¹⁶O、¹⁴N¹⁴N¹⁷O和¹⁴N^{14相似文献}   

Terahertz imaging through self-mixing in a quantum cascade laser

We demonstrate terahertz (THz) frequency imaging using a single quantum cascade laser (QCL) device for both generation and sensing of THz radiation. Detection is achieved by utilizing the effect of self-mixing in the THz QCL, and, specifically, by monitoring perturbations to the voltage across the QCL, induced by light reflected from an external object back into the laser cavity. Self-mixing imaging offers high sensitivity, a potentially fast response, and a simple, compact optical design, and we show that it can be used to obtain high-resolution reflection images of exemplar structures.