Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGe HBTs

A high-concentration in-situ phosphorus-doping technique for silicon low-temperature epitaxial growth with Si₂H₆ has been developed. Growth temperature has an impact on the crystal quality and on lattice strain of phosphorus-doped silicon layers. Resistivity, micro-Raman spectroscopy, and high-resolution X-ray diffraction indicated that good crystal quality was achieved at a growth temperature of 525 °C. On the other hand, growth pressure has little influence on crystal quality or on lattice strain except for surface morphology. By optimizing epitaxial growth conditions, an extremely high concentration of phosphorous doping was achieved without a high-temperature activation annealing, and the resultant good crystal quality of the phosphorus-doped silicon layer gave a very low resistivity. Accordingly, the high-concentration in-situ phosphorus doping is a powerful technique to fabricate future ultra-high-speed SiGe HBTs.     

Performance of GPRML-AR system in perpendicular magnetic recording channel with thermal decay

The bit-error rate (BER) performance of the generalized partial response maximum likelihood with autoregressive (GPRML-AR) channel model system in perpendicular magnetic recording (PMR) channel with thermal decay is obtained. The 128/130(0,16/8) run-length-limited (RLL) code is used as a recording code. The GPR channel consists of the PR1 channel followed by the reduction circuit of predicted noise. The BER performance is evaluated by computer simulation using a thermal decay model. The model has been obtained by using an approximate equation that represents amplitude degradation of the reproducing waveform with elapsed time based on the experimental data for CoPtCr-SiO₂ PMR media. The Viterbi detector with an AR channel model is employed. Furthermore, long-term degradation of the required SNR to achieve a BER of 10⁻⁴ with elapsed time is obtained and the performance is compared with that of PR1ML system. The results show that the poorer the thermal stability of the medium becomes, the larger the SNR gain of the GPR1ML-AR system over the PR1ML system becomes. The SNR gain also increases with elapsed time.     

Zirconia-based planar NO2 sensor using ultrathin NiO or laminated NiO–Au sensing electrode

The nanostructured thin NiO films with the thicknesses of 30–180 nm were examined as a sensing electrode (SE) for the planar mixed-potential-type yttria-stabilized zirconia (YSZ)-based NO₂ sensor. The sensing characteristics were examined in the temperature range of 600–800 °C under the wet condition (5 vol.% water vapor). Among the NiO-SEs tested, the 60 nm-thick NiO-SE sintered at 1,000 °C was found to give the highest NO₂ sensitivity in the NO₂ concentration range of 50–400 ppm accompanying with fast response/recovery at the operating temperatures of 600–700 °C. The high NO₂ sensitivity was attributed to the high catalytic activity for both electrochemical reactions of O₂ and NO₂ at the interface of NiO-SE/YSZ. The ultrathin gold layer with the thickness of about 60 nm was additionally formed on the 60 nm-thick NiO-SE to fabricate the laminated-type (60 nm NiO/60 nm Au)-SE. It was demonstrated that the use of this laminated (NiO–Au)-SE improved both the sensitivity and the selectivity to NO₂.     

Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review

This article briefly summarizes the diffusion and reactions of interstitial oxygen species in amorphous SiO₂ (a-SiO₂). The most common form of interstitial oxygen species is oxygen molecule (O₂), which is sensitively detectable via its characteristic infrared photoluminescence (PL) at 1272 nm. The PL observation of interstitial O₂ provides key data to verify various processes related to interstitial oxygen species: the dominant role of interstitial O₂ in long-range oxygen transport in a-SiO₂; formation of the Frenkel defect pair (Si–Si bond and interstitial oxygen atom, O⁰) by dense electronic excitation; efficient photolysis of interstitial O₂ into O⁰ with F₂ laser light (λ = 157 nm, hν = 7.9 eV); and creation of interstitial ozone molecule via reaction of interstitial O₂ with photogenerated O⁰. The efficient formation of interstitial O⁰ by F₂ laser photolysis makes it possible to investigate the mobility, optical absorption, and chemical reactions of interstitial O⁰. The observed properties of O⁰ are consistent with the model that O⁰ takes the configuration of Si–O–O–Si bond. Interstitial O₂ and O⁰ react with dangling bonds, oxygen vacancies, and chloride groups in a-SiO₂. Reactions of interstitial O₂ and O⁰ with mobile interstitial hydrogen species produce interstitial water molecules and hydroperoxy radicals. Interstitial hydroxyl radicals are formed by F₂ laser photolysis of interstitial water molecules.     

Studies on coherent and incoherent spin dynamics that control the magnetic field effect on photogenerated radical pairs

Since 1970s, magnetic field effects (MFEs) on photogenerated radical pairs have been the centre of focus in the field of spin chemistry. The MFE attributes to quantum mechanical interconversion between the singlet and triplet radical pair states and subsequent spin-selective recombination reactions. In this New View article, the author picks up two hot topics studied during the last two decades, which are (i) so-called low field effect (LFE) and (ii) 2J-resonance MFE on fixed distance donor–acceptor linked molecules. In both of the topics, quantum mechanical explanations are given referring to recent reports, and some novel calculations have been carried out for bridging theoretical and experimental data for long-lived radical pairs. For the first topic, time domain calculations of coherent state mixing have been carried out for elucidation of hyperfine (HF) structure dependence of the LFE. For the second topic, Monte Carlo simulations of the torsional motion of polyaromatic linker unit have been carried out for the demonstration of fast decoherence in such rigid molecules. From these considerations, future possibilities of MFE studies on photo-functional materials and biomolecules have been indicated.     

Synthesis of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and its higher homologs through palladium-catalyzed intramolecular decarboxylative arylation

We report herein an effective method for the construction of 4- and 7-ring benzo-fused thieno[3,2-b]thiophenes, involving palladium-catalyzed intramolecular decarboxylative arylation as the key step.     

Skeleton transformation of α-pyrone induced by 5-aryl substituent into ring-fused dihydrofuran

A skeleton transformation of 5-aryl-α-pyrones into dihydrofurans was developed. In the course of our study of the skeleton transformation reaction of α-pyrones by using dimethylsulfoxonium methylide, α-pyrones having an aryl group at the 5-position were converted into corresponding dihydrofurans as major products and bicyclo[3.1.0]hexanes as minor products. Selectivity for dihydrofurans was improved by optimizing the reaction conditions and investigating the substituent effect.     

5,12‐Diacetyl‐5,12‐dihydroquinoxalino[2,3‐b]quinoxalines: Solid‐State Fluorescence,AIE Properties,and Orbital Switching by Substituent Effect

The compound 5,12‐diacetyl‐5,12‐dihydroquinoxalino[2,3‐b]quinoxaline 1 a and its derivatives were prepared, and their solid‐ and solution‐state spectroscopic properties were studied; 1 a shows stronger fluorescence in solution than in the solid state due to aggregation caused by self‐quenching. Phenyl‐ or alkoxy‐substituted derivatives 1 b – d show solid‐state fluorescence with moderate quantum yields of about Φ=0.12–0.15, although the corresponding values are 0.01–0.07 in solution. The spectroscopic properties of alkoxy‐substituted derivatives were hardly changed compared to 1 a and 1 b , although 1 a and 1 b have similar absorption and fluorescence maxima in solution and in the solid state. DFT calculations indicate that orbital switching occurs between HOMO and HOMO‐1 and HOMO‐2 due to orbital interactions with introduced substituents. Crystal structure analysis revealed that the molecules have bent structures around tertiary nitrogen atoms and form a characteristic dimeric structure.     

The second-generation synthesis of BICMAP analogues

We previously reported the synthesis of BICMAP (1a) via 6-diphenylphosphino-2,3-dihydrobenzofuran as a key intermediate. However, we did not successfully synthesize BICMAP analogues via a similar synthetic route. Herein we report the second-generation synthesis of BICMAP and its derivatives via diethylphosphonate as a key intermediate.