Detection of bisphenol A using a novel surface plasmon resonance biosensor

We present a compact surface plasmon resonance (SPR) biosensor for the detection of bisphenol A (BpA), an endocrine-disrupting chemical. The biosensor is based on an SPR sensor platform (SPRCD) and the binding inhibition detection format. The detection of BpA in PBS and wastewater was performed at concentrations ranging from 0.05 to 1,000 ng/ml. The limit of detection for BpA in PBS and wastewater was estimated to be 0.08 and 0.14 ng/ml, respectively. It was also demonstrated that the biosensor can be regenerated for repeated use. Results achieved with the SPR biosensor are compared with those obtained using ELISA and HPLC methods.     

Excitation of Electronic States of N<Subscript>2</Subscript> in Radio-Frequency Electric Field by Electron Impact

Excitation of electronic states of the N₂ molecule by electron impact is recognized as an essential process in nitrogen plasmas that strongly impacts their chemical reactivity and other properties. Many surface and coating technologies are based on radio-frequency plasma discharges in nitrogen. In this paper the electron impact excitation rate coefficients for singlet and triplet electronic states of the N₂ molecule have been calculated in non-equilibrium conditions in the presence of a radio-frequency electric field. A Monte Carlo simulation has been performed in order to determine non-equilibrium electron energy distribution functions within one period of the electric field. By using these distribution functions, the excitation rate coefficients have been obtained in the frequency range from 13.56 up to 500 MHz, at reduced electric field values from 200 to 700 Td.     

Principal component analysis of the main factors of line intensity enhancements observed in oscillating direct current plasma

Enhancement of emission line intensities by induced oscillations of direct current (DC) arc plasma with continuous aerosol sample supply was investigated using multivariate statistics. Principal component analysis (PCA) was employed to evaluate enhancements of 34 atomic spectral lines belonging to 33 elements and 35 ionic spectral lines belonging to 23 elements. Correlation and classification of the elements were done not only by a single property such as the first ionization energy, but also by considering other relevant parameters. Special attention was paid to the influence of the oxide bond strength in an attempt to clarify/predict the enhancement effect. Energies of vaporization, atomization, and excitation were also considered in the analysis. In the case of atomic lines, the best correlation between the enhancements and first ionization energies was obtained as a negative correlation, with weak consistency in grouping of elements in score plots. Conversely, in the case of ionic lines, the best correlation of the enhancements with the sum of the first ionization energies and oxide bond energies was obtained as a positive correlation, with four distinctive groups of elements. The role of the gas-phase atom-oxide bond energy in the entire enhancement effect is underlined.     

Vapor pressure of selected aliphatic alcohols by ebulliometry. Part 2

Vapor pressures of six pentanols, 2-methyl-1-butanol (CAS Registry Number 137-32-6), 2-methyl-2-butanol (CAS Registry Number 75-85-4), 3-methyl-1-butanol (CAS Registry Number 123-51-3), 3-methyl-2-butanol (CAS Registry Number 598-75-4), 2-pentanol (CAS Registry Number 6032-29-7) and 3-pentanol (CAS Registry Number 584-02-1), were measured by the precision ebulliometry over an approximate pressure range from 9 to 99 kPa. The absolute uncertainties in pressure and temperature are estimated to be less than or equal to 7 Pa and 0.02 K, respectively. The results are represented by the Antoine equation and compared with available literature data.     

On the difference scheme for a nonlinear diffusion-reaction-type problem

Published in Lietuvos Matematikos Rinkinys, Vol. 33, No. 1, pp. 16–29, January–March, 1993.     

Non-uniqueness of the heat current operator and the hopping thermoelectric and Nernst-Ettingshausen effects in amorphous semiconductors

The Hardy correction in the heat current operator is generalized to the case of non-zero electron-phonon coupling constantg. It is then shown that not only the lowest (minus first) order but also the fist order contribution ing to the thermoelectric power of amorphous semiconductors in the hopping regime disappears. Consequently, since the lowest (zero) order contribution to the thermoelectric effects in the magnetic field yields no Nernst-Ettingshausen effect in these materials, the last effect is of the second order ing, at least.     

Spatial correlations and temperature dependence of the phonon-assisted hopping thermoelectric power in amorphous semiconductors

The assumption that the thermoelectric power of amorphous elemental semiconductors remains constant (in the hopping regime) down to zero temperature (which accords with some experiments on e.g. amorphous Ge performed above 100 K) is shown to be incompatible with the lowest order single-phonon hopping theory until the spatial interlevel correlations are taken into account.