Transitions between disordered phases in supercooled liquid silicon

We have investigated the transitions between disordered phases in supercooled liquid silicon using computer simulations. The thermodynamic properties were directly obtained from the free energy, which was computed using the recently proposed reversible scaling method. The calculated free energies of the crystalline and liquid phases of silicon at zero pressure, obtained using the environment dependent interatomic potential, are in excellent agreement with the available experimental data. The results show that, at zero pressure, a weak first-order liquid-liquid transition occurs at 1135 K and a continuous liquid-amorphous transition takes place at 843 K. These results are consistent with the existence of a second critical point for the liquid-liquid transition at a negative pressure.     

A short synthesis of the erythrina skeleton and of (+/-)-alpha-lycorane

[reaction: see text] A new nonchain 5-endo radical cyclization starting with xanthates was exploited in a short synthesis of (+/-)-alpha-lycorane and the erythrina ring system.     

Iron(III)-catalyzed Prins-type cyclization using homopropargylic alcohol: a method for the synthesis of 2-alkyl-4-halo-5,6-dihydro-2H-pyrans

[reaction: see text] A new Prins-type cyclization between homopropargylic alcohol and aldehydes in the presence of FeX(3) to obtain 2-alkyl-4-halo-5,6-dihydro-2H-pyrans in good yield is described. Osmium-catalyzed cis dihydroxylation provided direct access to trans-2-alkyl-3-hydroxy-tetrahydro-pyran-4-ones. Anhydrous ferric halides are also shown to be excellent catalysts for the standard Prins cyclization using homoallylic alcohol. Isolation of an intermediate acetal provides substantiation of a proposed mechanism.     

On the porosity of coldly condensed sers active Ag films: II. Comparison of adsorption and Raman scattering of pyridine

The adsorption of pyridine on coldly deposited Ag films annealed at temperatures ranging from 58 to 330 K, the porous surface topography of which has been investigated in part I of this work, has been studied by means of UPS, work function change and thermal desorption measurements. Pyridine induced work function changes have been employed to follow the surface diffusion of pyridine molecles into the pores of these Ag films. The surface diffusion is very slow below 60 K, but readily takes place at 130 K with an estimated activation energy of surface migration of E_m ≈ 4 kcal/mol. Preadsorption of Xe into the pores of the films causes inhibition of pyridine diffusion into the pores. The onset of pyridine desorption from porous films is detected at ≈ 200 K while from flat films the desorption begins already at 150 K. The careful analysis of our data on the structure of the coldly deposited Ag films and the adsorption behavior of pyridine on these films as well as a survey of published SERS data lead us to conclude that the SERS active sites of coldly deposited Ag films are within the pores. This conclusion is in agreement with recent theoretical calculations.     

Investigations of sol–gel-derived highly (100)-oriented Ba0.5Sr0.5TiO3 : MgO composite thin films for phase-shifter applications

Sol–gel deposition of highly oriented Ba_0.5Sr_0.5TiO₃:MgO composite thin films has shown desirable dielectric constant reduction and higher figure of merit for phase-shifter applications. In this multilayer configuration, MgO distributed homogeneously through the Ba_0.5Sr_0.5TiO₃ (BST50) matrix, and it helped in tailoring the dielectric constant and reducing the loss tangent significantly. In the present study, the high-frequency dielectric behavior of the films has been evaluated by fabricating an eight-element coupled microstrip phase shifter and measuring the degree of phase shift and insertion loss as a function of applied voltage at room temperature. An increase in phase-shifter figure of merit (degree of phase shift per dB insertion loss) from 28°/dB for pure BST50 to 71°/dB for a BST50:MgO film (at 14 GHz and 333 kV/cm) has been observed. PACS 77.55.+f; 81.20.Fw; 73.40.-c; 85.50.-n