X波段脉冲电子顺磁共振谱仪的矩形腔与微型平面腔的设计

为了满足脉冲式电子顺磁共振谱仪的需要,设计并制作了连续波谐振腔和脉冲谐振腔. 连续波谐振腔采用矩形谐振腔的设计,而脉冲谐振腔采用了微型平面腔的设计. 在设计阶段,使用Ansoft-HFSS三维电磁仿真软件对2种谐振腔进行模拟计算. 微型平面腔的加工采用了微纳加工技术. 制作完成的谐振腔的参数指标由网络分析仪测定. 实验测得2种谐振腔的参数指标符合理论模拟值,并满足脉冲式电子顺磁共振谱仪的要求.     

Extended magnetic reconnection across the dayside magnetopause

The extent of where magnetic reconnection (MR), the dominant process responsible for energy and plasma transport into the magnetosphere, operates across Earth's dayside magnetopause has previously been only indirectly shown by observations. We report the first direct evidence of X-line structure resulting from the operation of MR at each of two widely separated locations along the tilted, subsolar line of maximum current on Earth's magnetopause, confirming the operation of MR at two or more sites across the extended region where MR is expected to occur. The evidence results from in-situ observations of the associated ion and electron plasma distributions, present within each magnetic X-line structure, taken by two spacecraft passing through the active MR regions simultaneously.     

基于像散与理想光源成像原理的高亮度半导体激光器光纤耦合设计方法

运用像散原理和理想光源成像原理,讨论了半导体激光器消像散设计.提出了一种基于消像散的高亮度半导体激光器光纤耦合系统的设计方法.以波长为808 nm,输出功率为10 W的半导体激光器的光纤耦合为例,给出了详细的计算方法和设计步骤.结果表明:采用该方法将半导体激光器光束耦合入数值孔径为0.22,芯径为50 μm的光纤中,耦...     

Propagation of high-power partially coherent fibre laser beams in a real environment

The propagation performance of high-power partially coherent fibre laser beams in a real environment is investigated and the theoretical model of a high-power fibre laser propagating in a real environment is established. The influence of a collimating system and thermal blooming is considered together with atmospheric turbulence and mechanical jitter. The laser energy concentration of partially coherent beams in the far field is calculated and analysed based on the theoretical model. It is shown that the propagation performance of partially coherent beams depends on the collimating system, atmospheric turbulence, mechanical jitter and thermal blooming. The propagation performance of partially coherent beams and fully coherent beams is studied and the results show that partially coherent beams are less sensitive to the influence of thermal blooming, which results in that the energy degeneration for partially coherent beams is only 50% of that for fully coherent beams. Both partially coherent beams and fully coherent beams become less sensitive to thermal blooming when the average structural constant of the refraction index fluctuations increases to 1.7 × 10^-14 m^-2/3. The investigation presents a reference for applications of a high-power fibre laser system.     

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.     

光纤激光阵列目标在回路自适应光学系统的数值模拟

研究了光纤激光阵列目标在回路自适应光学系统在实际大气环境中的传输.从光纤激光阵列、激光在大气中的传输、目标和优化算法四个方面,建立了光纤激光阵列目标在回路自适应光学系统的理论模型.在不同强度大气湍流下,对系统补偿大气湍流影响的效果进行了研究,并对系统控制参数优化进行了简单探讨.结果表明,目标在回路闭环控制结构能够有效补...     

螺旋轴棱锥的光束传输特性

 分析了螺旋轴棱锥的结构和光传输特性,基于衍射积分理论研究了发散球面波和拉盖尔-高斯光束经螺旋轴棱锥后的传输过程。研究表明,发散球面波经过螺旋轴棱锥后产生贝塞尔光束,其阶数与拓扑电荷数相同,但中心光斑（空心光斑）半径随传输距离的增加而变大;拉盖尔-高斯光束入射后同样产生贝塞尔光束,但其阶数变为拉盖尔-高斯光束和螺旋轴棱锥的拓扑电荷数之和,出射光束的拓扑电荷数与阶数相等。     

Analysis of Ar line spectra from indirectly-driven implosion experiments on SGII facility

This paper reports on the indirectly-driven implosion experiments on SGII laser facility in which Ar emission spectrum from Ar-doped D-filled plastic capsule is recorded with the crystal spectrometer. Spectral features of Ar Heβ line and its associated satellites are analysed to extract the electron temperature and density of the implosion core. Non local thermal equilibrium (NLTE) collisional-radiative atomic kinetics and Strark broadening line shape are included in the present calculation. By comparing the calculated spectrum with the measured one, the core electron temperature and density are inferred to be 700 eV and 2.5×10²³ cm^-3 respectively. With these inferred values of electron temperature and density, neutron yield can be estimated to agree with the measured value in magnitude despite of the very simple model used for the estimation.     

大块金属玻璃Zr41Ti14Cu12.5Ni10Be22.5的流变行为研究

采用静态拉伸方法在连续升温条件下动态地测量了大块金属玻璃Zr41Ti14Cu12.5Ni10Be22.5（Vit1）的黏度随温度的变化关系.在应变速率与温度的关系曲线中，观测到了与玻璃转变和晶化过程相联系的多个应变速率峰.在玻璃转变温度Tg以上，大块金属玻璃Zr41Ti14Cu12.5Ni10Be22.5的过冷液体呈现Newton流体特征，其黏度与温度的关系符合Vogel Fulcher-Tammann (VFT)关系式，拟合得到脆度D*＝36，VFT温度T0＝319K，脆度参数m＝30，这说明Zr41T 关键词： 大块金属玻璃 应变速率 剪切黏度 自由体积     

Optically controlled SiCGe/SiC heterojunction transistor with charge-compensation layer

A novel optically controlled SiCGe/SiC heterojunction transistor with charge-compensation technique has been simulated by using commercial simulator.This paper discusses the electric field distribution,spectral response and transient response of the device.Due to utilizing p-SiCGe charge-compensation layer,the responsivity increases nearly two times and breakdown voltage increases 33%.The switching characteristic illustrates that the device is latch-free and its fall time is much longer than the rise time.With an increase of the light power density and wavelength,the rise time and fall time will become shorter and longer,respectively.In terms of carrier lifetime,a compromise should be made between the responsivity and switching speed,the ratio of them reaches maximum value when the minority carrier lifetime equals 90 ns.