Interaction of metals with an organic semiconductor: Ag and In on PTCDA

The interaction of Ag and In with a thin film of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) was studied by near-edge X-ray absorption fine structure (NEXAFS). Upon Ag deposition on a PTCDA film of 20 nm thickness the relative intensities and lineshapes, as well as the angular dependence of the spectra remains unchanged, illustrating the formation of a chemically unreactive Ag/PTCDA interface. On the other hand, the adsorption of 0.3 nm In strongly decreases the intensity of the π^* resonances in C and O K-edge NEXAFS spectra. This is attributed to a strong charge transfer between In and PTCDA, leading to a redistribution of the charge in the molecule. However, the absence of a strong shift or new features and negligible dependence of peak intensities corresponding to π^* resonances on the In thickness indicate that the interaction between In and PTCDA is not accompanied by a covalent bond formation.     

Laser–MBE growth of high-quality ZnO thin films on Al2O3(0001) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser

High-quality ZnO thin films were grown on single-crystalline Al₂O₃(0001) and amorphous SiO₂/Si(100) substrates at 400–640 °C using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al₂O₃(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04° and the films on SiO₂/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al₂O₃(0001) and SiO₂/Si(100) were 3 and 18 meV, respectively. Received: 8 May 2001 / Accepted: 18 September 2001 / Published online: 20 December 2001     

Preparation and measurement in quantum physics

To honor Henry Margenau on the occasion of his 90th birthday, we attempt in this essay to integrate certain aspects of the physics, philosophy, and pedagogy of quantum mechanics in a manner very much inspired by Margenau's idealist scientific epistemology. Over half a century ago, Margenau was perhaps the first philosopher of science to recognize and elaborate upon the essential distinction between thepreparation of a quantum state and themeasurement of an observable associated with a system in that state; yet in contemporary quantum texts that distinction rarely receives adequate emphasis even though, as we demonstrate, it may be explicated through a series of simple illustrations.     

Using Gd-EOB-DTPA-enhanced 3-T MRI for the differentiation of infiltrative hepatocellular carcinoma and focal confluent fibrosis in liver cirrhosis

Purpose

The purpose of the study was to determine significant imaging features to differentiate between infiltrative hepatocellular carcinoma (HCC) and confluent fibrosis (CF) in liver cirrhosis using Gd-EOB-DTPA-enhanced 3-T magnetic resonance imaging.

Material and methods

Nineteen infiltrative HCCs and eight CFs were included. We evaluated the difference in imaging findings and apparent diffusion coefficient (ADC) between the two entities. We compared T2-weighted image (WI) and hepatobiliary phase (HBP) in terms of the clarity of the lesion outer margin.

Results

Seventeen infiltrative HCCs showed lobulated margin, while focal CFs showed either straight (n = 3) or irregular margins (n = 5) (P = .001). All infiltrative HCCs had intact or bulging contours, and all focal CFs showed capsular retraction (P = .001). Fourteen infiltrative HCCs and two focal CFs showed arterial enhancement (P = .035). The ADC of infiltrative HCCs was significantly lower than that of CFs (P = .001). Satellite nodules were noted in 10 infiltrative HCCs. In terms of outer margin clarity, infiltrative HCCs showed a more distinct margin on HBP than on T2-WI (P = .005), while these two sequences were not significantly different in focal CFs (P = 1.000).

Conclusion

HBP improved the imaging characteristics of infiltrative HCC, allowing it to be distinguished from focal CF. Infiltrative HCC showed lower ADC values than focal CF. Lobular configuration, contour bulging, enhancement pattern, associated satellite nodules and portal vein thrombosis were still found to be highly suggestive MR findings for infiltrative HCC.     

High performance Zn–Sn–O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μ_FE) of 13.2 cm²/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (V_th) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V_th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ_FE value of 18.7 cm²/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Biodegradable Holographic Polymer-Dispersed Liquid Crystal

The a-D-glucose was chemically modified with an allyl isocyanate (MG) and introduced into the polymer matrix for holographic polymer-dispersed liquid crystal (HPDLC), and the effects were studied in terms of morphology, grating formulation dynamics and electro-optical and biodegradable properties. Phase separation and diffraction efficiency increased at low content of (MG ≤ 4 wt%), while a rapid increase in crosslink density entrapped the LC droplets within the polymer to give poor phase separation, small droplet size, and low diffraction efficiency at high content. The HPDLC film was driven only with the addition of MG due to the increased droplet size with a minimum driving voltage of 18 V at 6.0 wt% MG. With the addition and an increasing amount of MG, the biodegradation of the composite film in a buffer solution was significantly increased in proportion to its amount.     

Simplified power supply for long pulse CO2 laser using zero cross switching technique

We propose a simple power supply for a longitudinally pulsed CO₂ laser with long pulse duration by the switching control of AC line (60 Hz) on HV leakage transformer primary, which can generate long pulse of about 3 ms compared to a typical pulsed power supply. In this power supply, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching, and AC line voltage switched directly by a SCR is applied to the leakage transformer primary. Thus, there is no need of a rectified bridge and an energy-storage capacitor in the discharge circuit, and the leakage transformer allows one to omit a current-limiting resistor. In order to control the laser output power, the pulse repetition rate is adjusted up to 60 Hz. A ZCS circuit and a PIC one-chip microprocessor are used to control the gate signal of SCR precisely.