A high dynamic range readout unit for a calorimeter

A high dynamic range readout system, consisting of a multi-dynode readout PMT and a VA32 chip, is presented. An LED system is set up to calibrate the relative gains between the dynodes, and the ADC counts per MIPs from dynode 7 are determined under cosmic-ray calibration. A dynamic range from 0.5 MIPs to 1×10⁵ MIPs is achieved.     

A Room-Temperature X-ray-Induced Photochromic Material for X-ray Detection

A color change: X-ray-induced photochromic species are rare and can be used for detection of X-rays. A highly robust X-ray-sensitive material with the discrete structure of a metal-organic complex has been found to show both soft and hard X-ray-induced photochromism at room temperature. A new ligand-to-ligand electron-transfer mechanism was proposed to elucidate this photochromic phenomenon.     

Bi2WO6/g-C3N4复合型催化剂的制备及其可见光光催化性能

利用溶剂热法, 把Bi₂WO₆纳米颗粒植入g-C₃N₄层间和表面成功地制备了Bi₂WO₆/g-C₃N₄复合型光催化剂。通过XRD、SEM、TEM、BET和UV-Vis分别对样品的结构、组成、形貌、比表面积、光学性能进行了表征。结果表明, g-C₃N₄层状结构被部分剥离成碎片且与Bi₂WO₆纳米颗粒形成了复合物。Bi₂WO₆/g-C₃N₄复合型光催化剂与单一Bi₂WO₆相比不仅扩展了可见光的响应范围、增大了比表面还加速了光生电子与空穴的分离。结果表明, Bi₂WO₆的最佳负载量为60wt%时, 复合型光催化剂具有最高的可见光催化活性且性能稳定、易回收。     

平行电磁场中的Rydberg锂原子吸收谱的模型势计算

用B样条基组展开方法结合模型势计算了Rydberg锂原子在平行电磁场下的振子强度谱. 径向和角向均采用高阶Ｂ样条基组.计算结果与已有的实验结果符合得很好.利用分波分析法,对部分谱线的振子强度的强弱进行了分析. 本文方法简单有效，易于推广到交叉电磁场中Rydberg原子的精确谱的计算. 关键词： B样条 能谱 振子强度 平行电磁场 Rydberg原子     

Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer

Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated,with the In composition in each well layer(WL)along the growth direction progressively increasing for SA and progressively decreasing for SB.The results show that SB exhibits an improved efficiency droop compared with SA.This phenomenon can be explained as follows:owing to the difference in growth pattern of the WL between these two samples,the terminal region of the WL in SB contains fewer In atoms than in SA,and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers.This results in SB having a deeper triangular-shaped potential well in its WL than SA,which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side,thus improving the efficiency droop.Moreover,the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.