Crystal structure and magnetic properties of two new cobalt selenite halides: Co5(SeO3)4X2 (X=Cl, Br)

Two new isostructural cobalt selenite halides Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂ have been synthesized. They crystallize in the triclinic system space group P−1 with the following lattice parameters for Co₅(SeO₃)₄Cl₂: a=6.4935(8) Å, b=7.7288(8) Å, c=7.7443(10) Å, α=66.051(11)°, β=73.610(11)°, γ=81.268(9)°, and Z=1. The crystal structures were solved from single-crystal X-ray data, R1=3.73 and 4.03 for Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂, respectively. The new compounds are isostructural to Ni₅(SeO₃)₄Br₂.Magnetic susceptibility measurements on oriented single-crystalline samples show anisotropic response in a broad temperature range. The anisotropic susceptibility is quantitatively interpreted within the zero-field splitting schemes for Co²⁺ and Ni²⁺ ions. Sharp low-temperature susceptibility features, at T_N=18 and 20 K for Co₅(SeO₃)₄Cl₂ and Co₅(SeO₃)₄Br₂, respectively, are ascribed to antiferromagnetic ordering in a minority magnetic subsystem. In isostructural Ni₅(SeO₃)₄Br₂ magnetically ordered subsystem represents a majority fraction (T_N=46 K). Nevertheless, anisotropic susceptibility of Ni₅(SeO₃)₄Br₂ is dominated at low temperatures by a minority fraction, subject to single-ion anisotropy effects and increasing population of S_z=0 (singlet) ground state of octahedrally coordinated Ni²⁺.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p     

中物院远红外自由电子激光实验研究

中国工程物理研究院基于射频直线加速器技术的远红外自由电子激光(FIR-FEL)实验取得阶段性进展,于2005年3月24晚8时30分首次出光, 并多次重复. 中心波长115μm, 谱宽1%.介绍了实验系统的主要组成部分和主要实验结果.     

模式评价理论模型及其应用

基于事前评价过程和自然界生物进化过程的相似性，提出了系统结构、系统结构模式和系统环境模式矩阵的概念，并根据系统结构、系统结构模式与系统环境模式矩阵的适应程度，建立了模式评价决策模型，制定了评价系统的评价分类准则，并对评价系统作了一定的理论分析．将此模型和方法应用于城市生态安全评价中，通过与模糊综合评价法的比较，表明了该评价模型和方法的优越性．     

航空兵塔台辅助指挥系统通信分系统技术设计方案

文章详细描述了航空兵机场塔台辅助指挥系统之通信分系统设计的特点与功能、硬件结构、软件设计原则以及接口通信协议等问题。该分系统设计已在航空兵塔台辅助指挥系统研究中得到应用 ,并达到了良好的控制效果。     

The Hadamard Theorem and Borel–Carathéodory Theorem on Riemann Surfaces

In this paper, we first define a kind of pseudo–distance function and annulus domain on Riemann surfaces, then prove the Hadamard Theorem and the Borel–Carathéodory Theorem on any Riemann surfaces. Supported by NSFC 10501052     

新型噻吩基取代卟啉的合成及其荧光光谱研究

合成了两种新型噻吩基卟啉－5，15－二（2－噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7a（45．1％）和5，15－二（2－联噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7b(61.2%),并研究了它们的光谱性质，其中荧光光谱的最大发射峰蜂都在631nm处，量子产率分别为4．1％（7a)和1．4％（7b)。     

一维无序体系电子跳跃导电研究

建立了电子隧穿电导模型,推导了一维无序体系新的直流电导公式.通过计算20000格点无序体系的直流电导率,分析了直流电导率和温度及外场电压的关系,讨论了无序度对直流电导的影响.计算结果表明,无序体系的直流电导率随无序度的增加而减小;外加电场较小时,电导率相对较大,且出现一系列峰值,电压较大时,电导率反而较小;无序体系在低温区出现了负微分电阻特性,电导率随温度的升高而增大,在高温区电导率随温度的升高而减小.计算结果和实验符合很好 关键词： 无序体系 电子隧穿 直流电导率