Rankin-Cohen brackets on pseudodifferential operators

Pseudodifferential operators that are invariant under the action of a discrete subgroup Γ of SL(2,R) correspond to certain sequences of modular forms for Γ. Rankin-Cohen brackets are noncommutative products of modular forms expressed in terms of derivatives of modular forms. We introduce an analog of the heat operator on the space of pseudodifferential operators and use this to construct bilinear operators on that space which may be considered as Rankin-Cohen brackets. We also discuss generalized Rankin-Cohen brackets on modular forms and use these to construct certain types of modular forms.     

一类递归集的Hausdorff维数及Bouligand维数

本文给出递归集的Ｈａｕｓｄｏｒｆｆ维数的下界估计，并由此确定了一类递归集的维数，所获结果包含并推广了Ｂｅｄｆｏｒｄ，Ｄｅｋｋｉｎｇ及文志英、钟红柳等人的有关结果。     

光放大器前置可调光学滤波器

介绍Ｆ－Ｐ干涉滤波器实现中心波长可调的两种机理，给出通过改变腔距来改变中心波工的滤波器的典型结构，并且给出了相应的电压驱动电路，实验表明选择合适的光放大器前置滤波器可以提高系统的灵敏度。     

Integral points of P n −{2n+1 hyperplanes in general position}

Oblatum 4-VI-1990 &; 5-III-1991     

一类几乎最优循环图{C_p(m,m+1,p/a)}

本文比较了循环图类{c_p(n_1,…,n_p)}和{c-p(n_1…,n_p,p/α)}的直径下界。对于p和α满足一定条件的循环图类{c_p(n_1,n_2,p/α)},本文给出了达到或几乎达到此图类直径下界的一类几乎最优循环图{c_p(m,m+1,p/α)}。     

超声波在多糖降解及提取中的应用

本文支综合介绍了超声波在多糖降解和提取中应用的研究进展．着重对超声波在淀粉，壳多糖，细菌多糖的降解和真菌多糖的提取中的应用作了较详细的阐述．     

混合方次的Waring——Goldbach问题

研究混合方次的Waring--Goldbach     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.     

线性递归序列模q

设{u_k}_k≥0为一个线性递归序列．序列{u_k(mod q)}_(k≥0)是周期的,很多人都对其周期有过研究．本文应用二次数域中理想的理论,较完全地刻面了二次线性递归序列模q的周期长度,所获结果加强并推广了Engstrom及Wall的结论．     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟