Influence of the phase coherence length on ballistic transport

The characteristic length scales for the transport in disordered metals are discussed. Based on a phenomenological model of phase randomising scattering processes, the influence of the phase coherence length on the conductance of ballistic systems is studied. It is argued that the frequency dependence of the conductance of quasi-one dimensional systems can be used in order to determine not only the statistical average but the whole distribution function of the phase coherence length. Various cases of distributions, the -function, the exponential, and the Gamma distribution, are discussed. It is shown that due to quantum coherence effects deviations from the classical (Drude) behavior of the conductance exist. For independent scattering processes the probability distribution function is given by the Poisson distribution function. In this case an expression for the conductance can be derived which contains the ballistic transport, and the result for the exponential distribution.     

Quantitative characterization of chaotic instabilities in semiconductors

A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk ^*, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAsCr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk ^* range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.     

Transition metal complexes with Girard reagent-based ligands

The ligand, salicylaldehyde Girard-T hydrazonium chloride, [H₂SalGT]Cl (1), and two complexes [Cu(HSalGT)X₂]·H₂O (X = Br(2); Cl(3)) were synthesized and their crystal structures were determined by single-crystal X-ray analysis. In the two isostructural complexes, the Cu(II) is located in a square-pyramidal environment, with the chelating ligand and one halogen atom in the basal plane and the second halogen in the apical position. The most apparent structural difference between the 1 and its complexes 2 and 3 is the orientation of the N(CH₃)₃ group: in 1, it is practically coplanar to the rest of the molecule, while in 2 and 3 it is oriented to the side of the axially bonded halogen, which can be explained by the C–H…X intramolecular interactions. The compounds were characterized by elemental analysis, molar conductivity, magnetic susceptibility and electronic absorption spectra.     

Untersuchung der Kinetik der Strukturbildung und der thixotropen Eigenschften paraffinhaltiger Dispersionssysteme

Ohne Zusammenfassung     

Phase Analysis of the Binary System of Cryolite (Na3AlF6) and Sodium Metasilicate (Na2SiO3)

The phase analysis of cryolite (Na₃AlF₆) and sodium metasilicate (Na₂SiO₃) was performed by thermal analysis. The eutectic system with a region of two immiscible substances at a concentration of Na₂SiO₃ between 42.8 and 46.3 mol‐% was identified and the eutectic temperature determined to (886±2) °C. Based on the results of mass‐loss measurements, it was assumed that the introduced Na₂SiO₃ reacts with Na₃AlF₆ due to the formation of some nonvolatile stable compounds. The stable reaction products were identified by X‐ray diffraction analysis and IR spectroscopy of the spontaneously cooled samples, which established the formation of NaF and stable amorphous aluminosilicate compounds.     

Multilayered Cu–Ti deposition on silicon substrates for chemiresistor applications

Abstract

On the perspective to develop CuO–TiO₂ MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25?keV Ar?+?ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400?°C for 24?h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu–Ti–O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO₂ in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.