Structural and electrical properties of core–shell structured GaP nanowires with outer Ga2O3 oxide layers

This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga₂O₃ layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm²/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH^- or O₂ ^- ions on the Ga₂O₃ surface shell. Using an intrinsic Ga₂O₃ shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O₂. The GaP nanowire devices were fabricated as sensors for NO₂, NH₃, and H₂ gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p     

Linear sorting withO(logn) processors

A file ofn records can be sorted in linear time givenO(log(n)) processors. Four such algorithms are presented and analyzed. All of them have reasonable hardware requirements; no memory access conflicts are generated; a constant number of communication lines per processor are needed (except for one case); and the space requirements areO(n) orO(n log(log(n))).     

Estimating the largest singular values of large sparse matrices via modified moments

We describe a procedure for determining a few of the largest singular values of a large sparse matrix. The method by Golub and Kent which uses the method of modified moments for estimating the eigenvalues of operators used in iterative methods for the solution of linear systems of equations is appropriately modified in order to generate a sequence of bidiagonal matrices whose singular values approximate those of the original sparse matrix. A simple Lanczos recursion is proposed for determining the corresponding left and right singular vectors. The potential asynchronous computation of the bidiagonal matrices using modified moments with the iterations of an adapted Chebyshev semi-iterative (CSI) method is an attractive feature for parallel computers. Comparisons in efficiency and accuracy with an appropriate Lanczos algorithm (with selective re-orthogonalization) are presented on large sparse (rectangular) matrices arising from applications such as information retrieval and seismic reflection tomography. This procedure is essentially motivated by the theory of moments and Gauss quadrature.This author's work was supported by the National Science Foundation under grants NSF CCR-8717492 and CCR-910000N (NCSA), the U.S. Department of Energy under grant DOE DE-FG02-85ER25001, and the Air Force Office of Scientific Research under grant AFOSR-90-0044 while at the University of Illinois at Urbana-Champaign Center for Supercomputing Research and Development.This author's work was supported by the U.S. Army Research Office under grant DAAL03-90-G-0105, and the National Science Foundation under grant NSF DCR-8412314.     

Adsorbed state and vibrational excitation of N2 on Pd(110)

High-resolution vibrational electron energy loss spectroscopy, low-energy electron diffraction and Auger electron spectroscopy have been used to study the interactions of nitrogen with the Pd(110) surface. At 120 K, N₂ is chemisorbed molecularly on the Pd(110) surface, and the (2 × 1)-N₂ structure is formed. Most probably, the N₂ molecules are chemisorbed in the on-top sites of the bulk-like Pd(110) surface in the upright-linear structure. The Pd---N₂ bond energy is estimated to be ˜ 6 kcal/mol. The Pd---N₂ and N---N stretching vibrations of N₂ admolecules on Pd(110) are observed at 30 and 278 meV, respectively. The primary-energy dependence and angle dependence of their excitation cross sections agree reasonably well with the prediction of the dipole theory. The electron beam-induced effects are briefly discussed.     

Reduction of the concentration of slow insulator states in SiO2/InP-MIS structures

The well-known drift phenomena usually found in the InP-metal-insulator-semiconductor (MIS) devices can be explained by the assumption of a spatial and energetical distribution of slow states located within the insulator. The concentration of these states can be reduced by far more than one order of magnitude if a suitable technique of insulator deposition is applied. In this paper we will discuss the influence of the deposition temperature, the spatial separation of sample and plasma (“indirect plasma method”), and the addition of phosphorus into the reaction chamber during the initial period of insulator deposition on the properties of n-type and p-type InP-MIS capacitors. Plasma-enhanced chemical vapor deposited silicon dioxide is used as insulator. The samples were characterized by means of capacitance/voltage (C(V)) and deep level transient spectroscopy (DLTS) measurements. Only minor hysteresis of the C(V) curves and concentrations of slow insulator states of only (1–2)×10¹¹ cm^-2 eV^-1 are measured for the best of our samples.     

Spin structure and weak ferromagnetism of Mn3Sn

The compound Mn₃Sn shows an interesting magnetic behavior. A triangular screw spin structure has been observed below 250 K, whose period is independent of temperature. The screw structure is sensitive to heat treatment, alloy composition and impurity content.     

High-throughput concept for tailoring switchable mirrors

The optical properties, the switching kinetics and the lifetime of hydrogen switchable mirrors based on Mg-Ni alloys are determined with particular regard to the composition of the optically active metal-hydride layer in combination with the thickness of the catalytic capping layer. For this, a high-throughput experiment is introduced. The switching kinetics and the reversibility of switchable mirrors are strongly thickness dependent, though the details hinge on the fine structure of the clustered capping layer. Therefore, the kinetics is correlated with the surface structures of Pd on Mg_yNi_1−y as investigated by scanning tunneling microscopy. The results are explained by the so-called strong metal-support interaction (SMSI) state, characterized by a complete encapsulation of the capping layer clusters by oxidized species originating from the support. The SMSI-effect is less important with increasing Pd-layer thickness, and is suppressed by a good wetting of the Pd-clusters on the optically active film. This explains the critical thickness for the catalyzed hydrogen uptake observed in many switchable mirror systems. Moreover, the degradation of the kinetics during cycling is found to depend on the Pd-layer thickness and on the gas environment. Only films, covered with at least 15 nm Pd, show small degradation caused by the SMSI-effect. The SMSI-effect is partly reversible: after changing the gas environment from hydrogen to oxygen, the oxide on the Pd-clusters can be partly removed.