Properties of RF sputtered ZnxCd1−xS thin films

Zn _x Cd_1–x S thin films (0x0.20) were prepared using rf sputtering in argon atmosphere and characterized using X-ray diffraction, optical transmission, electrical resistivity and photoconductive decay measurements. The films were found to possess hexagonal structure. The crystallite size and degree of preferential orientation were found to decrease with the increase ofx and to improve upon annealing in vacuum at 250 °C. The transmission edge shifted towards shorter wavelengths with the increase ofx in agreement with the expected shift in the energy band gap. The films were found to exhibit room temperature resistivity in the range 100–1000 cm. The obtained values of long wavelength transmission (70–80%) and minority carrier diffusion length (30 m) are high enough for the application of these films in the field of solar cells.     

Speeding-up and scaling of domain-wall relaxation nearT c of a uniaxial ferromagnet

The dynamic susceptibility () measured between 10 Hz and 10 MHz on different GdCl₃-ellipsoids (T _c=2.21 K) reveals a completely reversible motion of the domain walls. Taking into account the contribution of the fast adiabatic intradomain magnetization to the nearly Debye-shaped (), we determine for the first time the kinetic Onsager coefficientL _d of the domain wall relaxation of a ferromagnet. Approaching the CurietemperatureL _d speeds up critically, which by a novel simple relaxational model can be related to the increasing width (=correlation length) of linear Bulaevskii-Ginzburg domain-walls and to the shrinking domain period. The reduction ofL _d by an external field can be represented by a universal scaling function, and within the same dynamical model, this effect is ascribed to the increase of the domain period, predicted for a bubble phase. However, the effect of sample size onL _d is much smaller than expected.     

Dispersive anisotropic ballistic phonon propagation in [100] GaAs

We report experimental observations of the phonon focusing pattern in [100] GaAs using low temperature electron beam scanning for phonon generation. The typical dispersive effects for high-frequency phonons expected from the calculations by Tamura have clearly been observed using PbIn tunnel junctions for phonon detection. The quantitative comparison of our experimental results with the frequency dependent calculations by Tamura allowed to determine the dominant phonon frequencies contributing to the detector signal in our different experiments. Above the temperature of the -point the dominant phonon frequencies appear to be shifted considerably to lower values, which could be explained by a heating effect in the liquid-He layer adjacent to the tunnel junction detector. By comparing the observed magnitude of the detector signal with different theoretical treatments of the detector response, we have found satisfactory agreement for a model where the perturbation due to the high-frequency phonons is restricted to the base electrode of the detector reached first by the phonons following their passage through the crystal.     

The absorption of pulsed CO2-laser radiation by ethylene at total pressures from 25 to 3000 Torr

The absorption of pulsed CO₂-laser radiation by ethylene has been measured at total pressures from 25 to 3000 Torr, using the P(12) and P(14) lines in the 10.6 m band, with incident fluences from 0.1 to 0.7 J/cm². Marked deviations from the Beer-Lambert absorption law were observed, with the effective absorption coefficient varying with pressure, fluence, absorption path-length and the addition of non-absorbing gas. Pressure broadening of the rotational lines of the ethylene absorption spectrum was shown to be the major cause of these deviations, together with lesser effects which can be attributed to the rise in temperature of the absorbing gas during the laser pulse.     

An integrated organic photoconductive detector for optoelectronics

In the system (poly-(N-vinyl carbazole) (PVK): trinitrofluorenone (TNF) a photoconductive complex is formed. Thin metal films are sputtered on BK7 glass substrates, forming two electrodes with 1 mm separation. The photoconductive complex is deposited from a solution in chlorobenzene/tetrahydrofurane on the glass substrate between the electrodes, forming a photoconductive detector. Photoconductivity of these planar detectors is studied using He-Ne laser light (=633 nm) as a function of electric field and for different TNF concentrations. An increase of photosensitivity is found for high TNF concentrations.Time resolution of the photoconductive PVK:TNF detector is investigated using a ruby pulse laser (=694 nm). The possible use of such detectors in combination with other polymer lightguides is demonstrated. Compared to most polymer waveguide materials PVK exhibits a rather high refractive index ofn=1.7. Thus the coupling of light into the photoconductive film is achieved directly. The planar structure allows further integration of polymeric components for optoelectronics.     

Spectroscopic investigation of the ionization kinetics in XeCl laser discharges by Xe* density measurements

Time and spatially resolved absorption measurements of Xe^* particle number densities performed at an X-ray preionized self-sustained XeCl^*-laser discharge were used to investigate the reaction kinetics of such discharges and to test the validity of the commonly-made assumption that they are fit well by spatially homogeneous numerical models. It turned out that the Xe^* density distribution over the discharge cross section remains homogeneous for less than 100 ns only. Comparing the experimental results of the homogeneous discharge phase with zero-dimensional model calculations, we conclude that induced emission modeled using two excited xenon levels must be taken into account for the quantitative interpretation of the absorption measurements. For the interpretation of the Xe 6s-6p absorption measurements even a multilevel model will be necessary. Further we conclude from the relative courses and the absolute values of the Xe^* particle number densities that realistic HCl kinetics should contain three vibrationally excited levels and stepwise excitation processes as proposed by Dem'yanov et al. [8].     

Laser-induced chemical etching of silicon in NF3 atmosphere

Chemical etching of single-crystal Si in an NF₃ atmosphere is performed by continuous irradiation with an Ar⁺ laser at 514.5 nm. The etching process proves to be a thermally stimulated chemical reaction between solid Si and NF₃ gas. The experimental results show how the depth and width of the etched grooves depend on laser power, scan speed, and gas pressure. The etch rates observed may exceed 25 m/s.     

Two-dimensional isotropic orientational glasses: a computer-simulation study

The analogue of the Edwards-Anderson model for isotropic vector spin glasses, but taking three-component quadrupoles instead of spins at each lattice site, is studied on the square lattice with extensive Monte Carlo calculations, using a nearest-neighbor symmetric gaussian interaction.It is shown that at low temperaturesT the model develops a short range order both with respect to glass like correlations and with respect to ferromagnetic correlations among the quadrupoles. The associated correlation lengths and susceptibilities diverge asT0, and the critical exponents for this zero-temperature phase transition are estimated.Dynamic correlation functions are analyzed as well and it is shown that the dacay of spatially displaced correlations displays a Kohlrausch-Williams-Watts behavior similar to the self-correlation function of the quadrupole moments.Some quantities are compared to their corresponding counterparts on the threedimensional simple cubic lattice, which also has a zero-temperature transition but at corresponding temperatures has stronger short-range-order.     

Complementary influence of electric and magnetic fields on the sample voltage oscillations ofP-type ultrapure germanium

We report on a previously not observed behaviour of oscillations of the voltage over a hyperpure germanium sample, when increasing the sample current from 0.05 to 13 A, for a number of transverse magnetic fields ranging from 697 to 1746 gauss. The sample temperature was 7.54 K±0.02 K. For each magnetic field the first observed peaks in the frequency spectrum of the sample voltage go to chaos by the period-doubling route and simultaneously shift to lower frequencies (first scenario). Superimposed upon this chaotic spectrum a new peak emerges, which again shifts to lower frequencies with increasing sample current (second scenario). A complementary effect of the sample current and the magnetic field is detected for four properties: firstly, the sudden onset of high resistance in the current versus voltage diagram, secondly, the transition between the two frequency scenarios described above, thirdly the presence of certain frequencies in the sample voltage spectra and fourthly the occurrence of an amplitude maximum for the principal frequency of the first scenario. It is shown that the first two transitions are interrelated.     

Electronic structure of amorphous Nb1-x Si x films studied by X-ray emission and X-ray photoelectron spectroscopy

We present valence band spectra of the amorphous system Nb_1–x Si _x (0.2x0.8), of bcc-Nb and of a-Si obtained by X-ray photoelectron spectroscopy (XPS, Al K) and X-ray emission spectroscopy (XES, Si K-emission bands). The samples were prepared as thin films by sputtering. The origin of all prominent spectral features was identified and consistently correlated to Si 3s-, Si 3p-and Nb 4d-derived states. The Nb4d-Si3p coupling is stable in binding energy over a wide concentration range. There is strong experimental evidence that the short range order changes considerably within the concentration interval 0.4x0.7, whereas the partial density of states of the Si 3p-electrons is clearly altered in the small concentration range 0.50x0.57.