基于SRLG不相关的共享保护算法的研究

通过对共享保护算法的深入分析,使用K条最短路和迭代思想的方法,提出了两种共享风险链路组不相关的共享保护算法,并在仿真平台上对两种算法的性能进行了仿真.KWFF算法借鉴了传统的K条最短路策略,并且在每一个波长平面上,都对新到业务进行了K条工作路由的计算,极大挖掘了网络中潜在的波长资源.而IFF算法由于引入了迭代的思想,避免了共享风险链路组问题中,所特别有“陷阱”问题的出现,并且利用两套权重计算公式,在计算工作路由和保护路由的时候,充分考虑了网络资源的实时变化情况.通过仿真数据可以看到,与以往算法相比,KWFF和IFF算法大大降低了网络阻塞率,并且提高了网络资源的使用效率.     

掺杂对CH样品Rayleigh-Taylor不稳定性增长的影响

在神光II激光装置上进行了辐射驱动不同掺杂样品的单模Rayleigh-Taylor(RT)不稳定性实验.结果显示:与纯碳氢(CH)样品相比,掺Br的CH样品的扰动更早、更快地进入非线性区,产生二次谐波,并且掺Br比例越高,CH样品扰动进入非线性区的时间越早,相同时刻扰动的二次谐波的幅度越高.这是因为密度梯度效应抑制了二次谐波的产生,掺Br比例越高,密度梯度标长越小;同时密度梯度效应还抑制三次谐波对基模增长的负反馈,造成基模具有更大的线性增长,导致线性饱和幅值大于经典值0.1λ.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

An improved watermarking method based on double random phase encoding technique

An improved watermarking method, based on the double random phase encoding technique and the cascaded-phases iterative algorithm and random-phase-shift algorithm, is proposed. This method can significantly reduce the needs of watermarking information storage for different multimedia products, and provide a reasonable criterion of determining the authenticity of a product for the copyright owner. This method can also be applied to track the source of copies. The effectiveness of this method was verified through numerical simulations.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Fabrication and surface enhanced Raman spectroscopy of single Au@SiO2 dimers linked by benzenedithiol

Metal nanoparticle dimers with controllable gap distance have attracted considerable attention because of their promising application in plasmonics. Generally, gaps with nanometer or subnanometer dimensions generate localized surface plasmon resonance (LSPR) coupling effect, thus contributing to a strong electromagnetic field for improving surface enhanced Raman scattering (SERS) effect. Here, we developed a facile approach to fabricate Au@SiO₂ dimers through the steric hindrance effect, in which the SiO₂ shell functioned as a block and a rigid dithiol molecule was employed as linker. The thickness of the SiO₂ shell played a critical role in improving the yield of dimers. The dimerization efficiency increased significantly as the shell thickness decreased to ~1 nm. When 1,4‐benzenedithiol was used as linker molecule, the yield of dimers was ~30%. Few dimers were obtained when mecaptobenzonic acid was used as linker. A thicker shell is associated with a low yield of dimer, whereas a thinner shell resulted in the formation of multimers and linear structures. The low number of linker molecules on the exposed area of monodisperse single nanoparticles and the lack of LSPR coupling effect (‘hot spots’) resulted in the disappearance of SERS signals of the linkers. The estimated SERS enhancement factor was about eight fold because of the strong coupling effect in the gap of the dimer with the distance of the dithiol molecular length. From the above results, SERS combined with SEM could be developed into powerful tools for monitoring the formation of dimers and positioning of single dimers. It may aid the control of assembly of Au nanoparticles and in probing key issues about SERS enhancements. Copyright © 2015 John Wiley & Sons, Ltd.     

Two-Level Defect-Correction Method for Steady Navier-Stokes Problem with Friction Boundary Conditions

In this paper, we present two-level defect-correction finite element method for steady Navier-Stokes equations at high Reynolds number with the friction boundary conditions, which results in a variational inequality problem of the second kind. Based on Taylor-Hood element, we solve a variational inequality problem of Navier-Stokes type on the coarse mesh and solve a variational inequality problem of Navier-Stokes type corresponding to Newton linearization on the fine mesh. The error estimates for the velocity in the $H^1$ norm and the pressure in the $L^2$ norm are derived. Finally, the numerical results are provided to confirm our theoretical analysis.     

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Barium titanate(BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition(PAD) technique.The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion.Crystal structures,surface morphologies,and dielectric performance were examined and compared for BTO thin films annealed under different temperatures.Correlations between the fabrication conditions,microstructures,and dielectric properties were discussed.BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr～ 400 and tan δ < 0.025 at 100 kHz.The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.     

Effect of initial-state target polarization on single ionization of helium by 1-keV electron impact

We report new results of triple differential cross sections for the single ionization of helium by 1-KeV electron impact at the ejection energy of 10 eV. Investigations have been made for both the perpendicular plane and the plane perpendicular to the momentum transfer geometries. The present calculation is based on the three-Coulomb wave function. Here we have also incorporated the effect of target polarization in the initial state. A comparison is made between the present calculation with the results of other theoretical methods and a recent experiment [D黵r M, Dimopoulou C, Najjari B, Dorn A, Bartschat K, Bray I, Fursa D V, Chen Z, Madison D H and Ullrich J 2008 Phys. Rev. A 77 032717]. At an impact energy of 1 KeV, the target polarization is found to induce a substantial change of the cross section for the ionization process. We observe that the effect of target polarization plays a dominant role in deciding the shape of triple differential cross sections.     

Electronic properties of anatase TiO2 doped by lanthanides: A DFT+U study

The effects of mono-doping of 4f lanthanides with and without oxygen vacancy defect on the electronic structures of anatase TiO₂ have been studied by first-principles calculations with DFT+U (DFT with Hubbard U correction) to treat the strong correlation of Ti 3d electrons and lanthanides 4f electrons. Our results revealed that dopant Ce is easy to incorporate into the TiO₂ host by substituting Ti due to its lower substitutional energy (∼−2.0 eV), but the band gap of the system almost keeps intact after doping. The Ce 4f states are located at the bottom of conduction band, which mainly originates from Ti 3d states. The magnetic moment of doped Ce disappears due to electron transfer from Ce to the nearest O atoms. For Pr and Gd doping, their substitutional energies are similar and close to zero, indicating that both of them may also incorporate into the TiO₂ host. For Pr doping, some 4f spin-down states are located next to the bottom of the conduction band and narrow the band gap of the doping system. However, for Gd doping, the 4f states are located in deep valence band and there is no intermediate band in the band gap. The magnetic moment of dopant Gd is close to the value of isolated Gd atom (∼7 μB), indicating no overlapping between Gd 4f with other orbitals. For Eu, it is hard to incorporate into the TiO₂ host due to its very higher substitutional energy. The results also indicated that oxygen vacancy defect may enhance the adsorption of the visible light in Ln-doped TiO₂ system.