Hysteretic sorption of light gases by a porous metal-organic framework containing tris(para-carboxylated) triphenylphosphine oxide

The porous metal-organic framework (MOF) PCM-4, based on tris(para-carboxylated) triphenylphosphine oxide, contains atypical, polar organic substituents; the material exhibits a hysteretic sorption of Ar, N2 and O2, and demonstrates the advantage of ligands of this type.     

Electronic structure and magnetism in transition metals doped 8-hydroxy-quinoline aluminum

We report the room-temperature ferromagnetism in transition metals (Co, Ni)-doped 8-hydroxy-quinoline aluminum (Alq3) by thermal coevaporation of high purity metal and Alq3 powders. For 5% Co-doped Alq3, a maximum magnetization of approximately 0.33 microB/Co at 10 K was obtained and ferromagnetic behavior was observed up to 300 K. The Co atoms interact chemically with O atoms and provide electrons to Alq3, forming new states acting as electron trap sites. From this, it is suggested that ferromagnetism may be associated with the strong chemical interaction of Co atoms and Alq3 molecules.     

Mechanistic studies of the oxidative N-dealkylation of a substrate tethered to carboxylate-bridged diiron(II) complexes, [Fe2(mu-O2CAr(Tol))2(O2CAr(Tol))2(N,N-Bn2en)2

Carboxylate-bridged diiron(II) centers activate dioxygen for the selective oxidation of hydrocarbon substrates in bacterial multicomponent monooxygenases. Synthetic analogues of these systems exist in which substrate fragments tethered to the diiron(II) core through attachment to an N-donor ligand are oxidized by transient species that arise following the introduction of O2 into the system. The present study describes the results of experiments designed to probe mechanistic details of these oxidative N-dealkylation reactions. A series of diiron(II) complexes with ligands N,N-(4-R-Bn)Bnen, where en is ethylenediamine, Bn is benzyl, and R-Bn is benzyl with a para-directing group R = Cl, F, CH3, t-Bu, or OCH3, were prepared. A Hammett plot of the oxygenation product distributions of these complexes, determined by gas chromatographic analysis, reveals a small positive slope of rho = +0.48. Kinetic isotope effect (KIE(intra)) values for oxygenation of [Fe2(mu-O2CAr(Tol))2(O2CAr(Tol))2(N,N-(C6H5CDH)2en)2] and [Fe2(mu-O2CAr(Tol))2(O2CAr(Tol))2(N,N-(C6H5CD2)(C6H5CH2)en)2] are 1.3(1) and 2.2(2) at 23 degrees C, respectively. The positive slope rho and low KIE(intra) values are consistent with a mechanism involving one-electron transfer from the dangling nitrogen atom in N,N-Bn2en to a transient electrophilic diiron intermediate, followed by proton transfer and rearrangement to eliminate benzaldehyde.     

Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.     

A deflection system to reduce the interference from post-source decay product ions in photodissociation tandem time-of-flight mass spectrometry

A deflection system consisting of four deflectors was designed and used to reduce the interference from post-source decay (PSD) product ions in photodissociation (PD) tandem time-of-flight (TOF) mass spectrometry. For simple protonated peptides generated by matrix-assisted laser desorption/ionization, the presence of PSD product ions at the laser irradiation spot was found to noticeably alter the minor peaks in the PD spectra even though the major ones were hardly affected. Other benefits from the use of the deflection system such as the improvement in the resolving power in PSD tandem mass spectra are discussed.     

Porphyrins bearing stable meso-alkylidenyl double bonds. A new family of nonplanar porphyrinoids

[Structure: see text] Unique core-modified porphyrinoids, such as oxabenziporphyrins, oxapyriporphyrins, and thiapyriporphyrins, bearing exocyclic C-C double bonds at meso-positions, have been synthesized and characterized. The synthesis was accomplished by utilizing typical "3+1"-type condensation. Two different stable tautomeric forms were isolated, and the two tautomeric forms can be interconvertible upon treatment with base. In contrast, only the structure bearing an exocyclic double bond was isolated in the case of oxapyriporphyrin and oxabenziporphyrin.     

Aspirin-induced Bcl-2 translocation and its phosphorylation in the nucleus trigger apoptosis in breast cancer cells

Here, we report that B-cell lymphoma 2 (Bcl-2) is a novel target molecule of aspirin in breast cancer cells. Aspirin influenced the formation of a complex by Bcl-2 and FKBP38 and induced the nuclear translocation of Bcl-2 and its phosphorylation. These events inhibited cancer cell proliferation and subsequently enhanced MCF-7 breast cancer cell apoptosis. Bcl-2 knockdown using small interfering RNA (siRNA) delayed apoptotic cell death, which correlated with increased proliferation following aspirin exposure. In contrast, Bcl-2 overexpression enhanced the onset of aspirin-induced apoptosis, which was also associated with a significant increase in Bcl-2 phosphorylation in the nucleus. Therefore, this study may provide novel insight into the molecular mechanism of aspirin, particularly its anticancer effects in Bcl-2- and estrogen receptor-positive breast cancer cells.     

Supramolecular Phthalocyanine Assemblies for Improved Photoacoustic Imaging and Photothermal Therapy

Phototheranostic nanoplatforms are of particular interest for cancer diagnosis and imaging‐guided therapy. Herein, we develop a supramolecular approach to fabricate a nanostructured phototheranostic agent through the direct self‐assembly of two water‐soluble phthalocyanine derivatives, PcS4 and PcN4. The nature of the molecular recognition between PcS4 and PcN4 facilitates the formation of nanostructure (PcS4‐PcN4) and consequently enables the fabrication of PcS4‐PcN4 with completely quenched fluorescence and reduced singlet oxygen generation, leading to the high photoacoustic and photothermal activity of PcS4‐PcN4. In vivo evaluations suggest that PcS4‐PcN4 could not only efficiently visualize a tumor with high contrast through whole‐body photoacoustic imaging but also enable excellent photothermal therapy for cancer.     

Improved optical and electrical properties of sol–gel-derived boron-doped zinc oxide thin films

Sol–gel spin-coating was used to grow zinc oxide (ZnO) thin films doped with 0–2.5 at.% B on quartz substrates. The structural, optical, and electrical properties of the thin films were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet–visible spectroscopy, and van der Pauw Hall-effect measurements. All the thin films had deposited well onto the quartz substrates and exhibited granular morphology. The average crystallite size, lattice constants, residual stress, and lengths of the bonds in the crystal lattice of the thin films were calculated from the XRD data. The PL spectra showed near-band-edge (NBE) and deep-level emissions, and B doping varied the PL properties and increased the efficiency of the NBE emission. The optical transmittance spectra for the undoped ZnO and boron-doped zinc oxide (BZO) thin films show that the optical transmittance of the BZO thin films was significantly higher than that of the undoped ZnO thin films in the visible region of the spectra and that the absorption edge of the BZO thin films was blue-shifted. In addition, doping the ZnO thin films with B significantly varied the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties such as the carrier concentration, mobility, and resistivity of the thin films.