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91.
D. Ohlberg J.J. Blackstock R. Ragan S. Kim R. Stanley Williams 《Applied Physics A: Materials Science & Processing》2005,80(6):1327-1334
A recently demonstrated [1] in-vacuo template-stripping process is applied to the study of platinum films stripped from ultra-flat silicon-oxide surfaces. Template-stripped (TS) Pt surfaces, prepared with a range of post-deposition annealing times prior to being stripped from the templating surface in an ultra-high vacuum (UHV) environment, are examined by UHV scanning tunneling microscopy (STM). These studies reveal that without post-deposition annealing, TS Pt surfaces are largely made up of poorly-ordered, granular nanostructures undesirable for many applications. The post-deposition annealing treatments explored in the study result in the emergence and continuous growth of large smooth crystallites. Issues with crystallite orientation relative to the TS surface and artefacts arising as a result of the epoxy used in the template-stripping process are presented and discussed in relation to optimizing the template-stripping procedure for specific applications such as self-assembled monolayer (SAM) formation for molecular electronics. PACS 68.37.Ef; 68.47.De; 68.55.Jk; 81.05.Bx; 81.15.Ef 相似文献
92.
Ju Yeon Woo Eun Hee Kim Tae Hoon Yoon Jae Chang Kim Byung Kyu Kim 《Liquid crystals》2007,34(9):1115-1120
Chiral dopants were added to the formulation of holographic polymer-dispersed liquid crystals and the effects studied in terms of grating formation dynamics, morphology, diffraction efficiency, contrast ratio and electro-optical properties of the films. A gradual increase of real-time diffraction efficiency, decrease of droplet size and increase of diffraction efficiency of the composite film were obtained with the addition and increasing content of chiral dopant, due to the increased viscosity of the liquid crystal (LC) doped with the chiral dopant leading to decreased droplet coalescence. The contrast ratio decreased with increasing content of chiral dopant due to the difficult orientation of LC molecules caused by the formation of a helical structure. Addition of a small amount of the chiral dopant increased the driving voltage slightly, whereas the decay time is decreased significantly as a result of the high twisting of the helical structure. 相似文献
93.
The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl2-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH4/H2/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl2 discharges is smooth, whereas that after etching in CH4/H2/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH4/H2/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH4/H2/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication. 相似文献
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95.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
96.
Jie Xue Liang Chen Li Zhou Zhifeng Jia Yanping Wang Xinyuan Zhu Deyue Yan 《Journal of Polymer Science.Polymer Physics》2006,44(15):2050-2057
α‐Cyclodextrin (α‐CD) has been complexed with various poly(ethylene glycol) (PEG) derivatives in aqueous solution. It has been found that the end groups of PEG derivatives affect the complexation kinetics greatly, but have only a little influence on the thermodynamic behavior. By increasing the hydrophobicity of end groups, the complexation speeds up rapidly. On the other hand, the bulky end groups slow down the threading of polymeric guests into the cavity of CD. By changing the hydrophobicity and the size of end groups, the complexation rate can be adjusted in the range of several orders of magnitudes, which should be quite useful in the design of new supramolecular systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 2050–2057, 2006 相似文献
97.
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99.
Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 26−1 fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH4, N2, and NH3 flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N2 flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH4 (or higher NH3) flow rates. Typical effects of SiH4 or NH3 flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH4 or NH3 for process optimization. 相似文献
100.