Static SIMS studies of the oxides and hydroxides of aluminium

The degree of hydroxylation or hydration of aluminium surfaces has been examined by static secondary ion mass spectroscopy (SSIMS). The SSIMS spectra of a series of aluminium oxide, oxyhydroxide and hydroxide surfaces have been obtained using instruments in three configurations. Similarities were observed in both negative and positive secondary ions spectra. Even though a direct comparison of the relative intensities cannot be made from one instrument to the other, a similar ranking of the various aluminium hydroxylation states was observed. Several ranking methods are discussed, as well as the similarities and differences observed while using the three instruments. Similar secondary ions were detected whatever the degree of hydroxylation of the aluminium oxide. This argues in favour of the formation of fragments by the combination of individually sputtered atoms or clusters to form the more stable secondaries, rather than the kick-off of 'structure-related' clusters originating directly from the upper surface layer.     

Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study

Implantation and diffusion behavior of Sb, Ti and N in ZnO single crystal and sputter deposited thin films were studied through secondary ion mass spectrometric studies on ion-implanted and thermally annealed samples. Sb was implanted and Ti and N were co-implanted into ZnO single crystals and polycrystalline thin films on Si substrates at room temperature. The implanted samples were then annealed at 800 °C. Depth profiles of implant distributions before and after annealing were examined by Secondary Ion Mass Spectrometry (SIMS). As expected, implant range is sensitive to the mass of the dopants; and the dopant distribution is broadened as implanted elements migrate deeper into the film on thermal annealing. While diffusion of N in the ZnO thin film is not significant, Ti tends to diffuse deeper into the sample during annealing. For Ti and N co-implanted single crystal, annealing induced diffusion causes more redistribution of the lighter N than Ti. In general, implanted dopants diffuse more easily in thin films compared to the single crystal due to the presence of grain boundaries in the latter.