Lifetime analysis of quasibound states in coupled quantum wells

A simple time-dependent model is presented to investigate lifetimes of the quasibound states in coupled quantum wells (CQWs). The transfer matrix approach is employed to discretize the conduction-band profile of the heterostructure and form a dispersion equation whose zeros correspond to the complex eigenenergies. Both the bound and quasibound states are extracted numerically in the complex plane by Newton's method. The lower and higher well subbands are found to have negative and positive energy shift, respectively, as following the no level crossing theorem. Besides, the decay rate of the quasibound state is approximately proportional to the absolute energy shift. The quasibound states, which have larger energy shift, have shorter lifetime and decay more quickly. Furthermore, the differences in lifetime between the quasibound states in CQWs can be easily realized as all the wave functions are specially adjusted to form the relative probability density distributions.     

Transition‐metal‐catalyzed reactions of 5‐methylene‐2‐oxazolidinone and 5‐methylene‐1,3‐thiazolidine‐2‐thione with isocyanates

5‐Methylene‐2‐oxazolidinone (1) and 5‐methylene‐1,3‐thiazolidine‐2‐thione (4) react with various isocyanates to give the corresponding urethanes 3 and 5 in high yields in the presence of palladium(0) or palladium(II) catalyst under mild reaction conditions. A mechanism is proposed. Copyright © 2003 John Wiley & Sons, Ltd.     

关于高阶中立型偏微分方程系统解的振动性

近年来,由于偏泛函微分方程(组)理论在人口动力学,生物遗传工程和化学反应过程等领域中有广泛的应用,因而很多学者在偏泛函微分方程(组)解的振动性理论的研究方面做了大量工作,取得了许多成果.本文将研究一类较广泛的高阶中立型偏微分方程组     

直径不超过4的树的割宽

§ 1　IntroductionThe cutwidth problem for graphs,as well as a class of optimal labeling and embed-ding problems,have significant applications in VLSI designs,network communicationsand other areas (see [2 ] ) .We shall follow the graph-theoretic terminology and notation of [1 ] .Let G=(V,E)be a simple graph with vertex set V,| V| =n,and edge set E.A labeling of G is a bijec-tion f:V→ { 1 ,2 ,...,n} ,which can by regarded as an embedding of G into a path Pn.Fora given labeling f of G,th…     

Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Liminf results on the increments of an (N,d)-Gaussian process

We establish some liminf theorems on the increments of a (N,d)-Gaussian process with the usual Euclidean norm, via estimating upper bounds of large deviation probabilities on the suprema of the (N,d)-Gaussian process. This revised version was published online in June 2006 with corrections to the Cover Date.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

Gauged harmonic maps,Born‐Infeld electromagnetism,and magnetic vortices

We study maps from a 2‐surface into the standard 2‐sphere coupled with Born‐Infeld geometric electromagnetism through an Abelian gauge field. Such a formalism extends the classical harmonic map model, known as the σ‐model, governing the spin vector orientation in a ferromagnet allows us to obtain the coexistence of vortices and antivortices characterized by opposite, self‐excited, magnetic flux lines. We show that the Born‐Infeld free parameter may be used to achieve arbitrarily high local concentration of magnetic flux lines that the total minimum energy is an additive function of these quantized flux lines realized as the numbers of vortices antivortices. In the case where the underlying surface, or the domain, is compact, we obtain a necessary sufficient condition for the existence of a unique solution representing a prescribed distribution of vortices antivortices. In the case where the domain is the full plane, we prove the existence of a unique solution representing an arbitrary distribution of vortices and antivortices. Furthermore, we also consider the Einstein gravitation induced by these vortices, known as cosmic strings, establish the existence of a solution representing a prescribed distribution of cosmic strings cosmic antistrings under a necessary sufficient condition that makes the underlying surface a complete surface with respect to the induced gravitational metric. © 2003 Wiley Periodicals, Inc.     

High performance 1689-nm quantum well diode lasers

1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current confinement structure, and the active region consisted of 5 pairs of InGaAs quantum wells and InGaAsP barriers.