The π N → e +e−N reaction close to the vector-meson production threshold

The π^? p→e ⁺ e ^? n and π⁺ n→e ⁺ e ^? p reaction cross sections are calculated below and in the vicinity of the vector-meson (?⁰,ω) production threshold. These processes are largely responsible for the emission of e ⁺e^? pairs in pion-nucleus reactions and contribute to the dilepton spectra observed in relativistic heavy ion collisions. They are dominated by the decay of low-lying baryon resonances into vector-meson-nucleon channels. The vector mesons materialize subsequently into e ⁺ e^? pairs. Using πN→?⁰ N and πN→ωN, amplitudes calculated in the center of mass energy interval 1.4 < √s<1.8 GeV, we compute the π^? p→e ⁺ e ^? n and π⁺ n→e ⁺ e ^? p reaction cross sections in these kinematics. Below the vector-meson production threshold, the π⁰?ω interference in the e ⁺ e^? channel appears largely destructive for the π^? p→e ⁺ e ^? n cross section and constructive for the π⁺ n→e ⁺ e ^? p cross section. The pion beam and the HADES detector at GSI offer a unique possibility to measure these effects. Such data would provide strong constraints on the coupling of vector-meson-nucleon channels to low-lying baryon resonances.     

Über Sesquiselenide der Lanthanoide: Einkristalle von Ce2Se3 im C‐, Gd2Se3 im U‐ und Lu2Se3 im Z‐Typ

On Sesquiselenides of the Lanthanoids: Single Crystals of C‐type Ce₂Se₃, U‐type Gd₂Se₃, and Z‐type Lu₂Se₃ Single crystals of lanthanoid sesquiselenides (M₂Se₃; here: M = Ce, Gd, Lu) are accessible through conversion of the elements (lanthanoid and selenium) in molar ratios of 2:3 within seven days at 850 °C from evacuated silica ampoules if equimolar amounts of NaCl serve as a flux. In the case of Ce₂Se₃ (a = 897.74(6) pm) und Gd₂Se₃ (a = 872.56(5) pm) the cubic C‐type (I4¯3d, Z = 5.333) forms as dark red beads, whereas the orthorhombic Z‐type (Fddd, Z = 16) emerges for Lu₂Se₃ (a = 1125.1(1), b = 798.06(8), c = 2387.7(2) pm) as orange‐yellow bricks. Upon oxidation of monochloride hydrides (MClH_x or A_yMClH_x; M = Ce, Gd, Lu; x = 1; A = Li, Na; y = 0.5) with selenium in arc‐welded tantalum ampoules the same main products appear with C‐Ce₂Se₃ and Z‐Lu₂Se₃, even with a surplus of NaCl or LiCl as fluxing agent. In the case of Gd₂Se₃, however, black‐red needles of the orthorhombic U‐type (Pnma, Z = 4; a = 1118.2(1), b = 403.48(4); c = 1097.1(1) pm) are yielded instead of C‐Gd₂Se₃. C‐Ce₂Se₃ crystallizes in a cation‐deficient Th₃P₄‐type structure (Ce₂S₃ type) according to Ce_2.667□_0.333Se₄ (Z = 4) or with Z = 5.333 for the empirical formula Ce₂Se₃. Here, Ce³⁺ is coordinated by eight Se^2— anions trigon‐dodecahedrally. In U‐Gd₂Se₃ (U₂S₃ type) two crystallographically independent Gd³⁺ cations with coordination numbers of 7 (Gd1) and 7+1 (Gd2), respectively, are present, exhibiting mono‐ or bicapped trigonal prisms as coordination polyhedra. The crystal structure of Z‐Lu₂Se₃ (Sc₂S₃ type) shows two different Lu³⁺ cations as well, which now both reside in octahedral coordination of six Se^2— anions each.     

Studies on the chemical constituents of the South China Sea sponge Phacellia fusca

Three pyrrololactam alkaloids have been isolated from the marine sponge Phacellia fusca Schmidt collected from the South China Sea, and their structures were determined as 1–3 , on the grounds of spectral data. This is the first report of these compounds from this sponge. The structure of 1 was confirmed by X-ray analysis.     

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

The first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement. The paper presented there appears in Infrared Photoelectronics, edited by Antoni Rogalski, Eustace L. Dereniak, Fiodor F. Sizov, Proc. SPIE Vol. 5957, 595707 (2005).