AES Depth profiling of semiconducting multilayer structures using an ion beam bevelling technique

An ion beam technique has been developed which allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very flat angles in the order of 0.1°. The bevels are used for AES depth profiling of heterostructures by the line scan technique. Measured and calculated line scans from (Al,Ga)As/GaAs and SiGe/Si test structures are compared to estimate the contributions of the electron escape depth and the ion beam mixing to the depth resolution. Received: 21 August 1996 / Revised: 14 January 1997 / Accepted: 18 January 1997     

On a Formula for the L2 Wasserstein Metric between Measures on Euclidean and Hilbert Spaces

For a separable metric space (X, d) L^p Wasserstein metrics between probability measures μ and v on X are defined by where the infimum is taken over all probability measures η on X × X with marginal distributions μ and v, respectively. After mentioning some basic properties of these metrics as well as explicit formulae for X = R a formula for the L² Wasserstein metric with X = Rⁿ will be cited from [5], [9], and [21] and proved for any two probability measures of a family of elliptically contoured distributions. Finally this result will be generalized for Gaussian measures to the case of a separable Hilbert space.     

Dispersive anisotropic ballistic phonon propagation in [100] GaAs

We report experimental observations of the phonon focusing pattern in [100] GaAs using low temperature electron beam scanning for phonon generation. The typical dispersive effects for high-frequency phonons expected from the calculations by Tamura have clearly been observed using PbIn tunnel junctions for phonon detection. The quantitative comparison of our experimental results with the frequency dependent calculations by Tamura allowed to determine the dominant phonon frequencies contributing to the detector signal in our different experiments. Above the temperature of the -point the dominant phonon frequencies appear to be shifted considerably to lower values, which could be explained by a heating effect in the liquid-He layer adjacent to the tunnel junction detector. By comparing the observed magnitude of the detector signal with different theoretical treatments of the detector response, we have found satisfactory agreement for a model where the perturbation due to the high-frequency phonons is restricted to the base electrode of the detector reached first by the phonons following their passage through the crystal.