Unprecedented alkylation of silicon enolates with alcohols via carbenium ion formations catalyzed by tin hydroxide-embedded montmorillonite

The solid acid, tin hydroxide-embedded montmorillonite, catalyzes the unprecedented alkylation of various silicon enolates with primary, secondary and tertiary benzylic alcohols as well as secondary allylic alcohols. The acid catalysis of Sn-Mont was not only higher than that of the other ion-exchanged montmorillonites (M-Mont; M = H, Ti, Fe and Al), but also higher than that of the typical homogeneous acid catalysts such as BF₃·OEt₂, TMSOTf and TfOH.     

Boron group element doping of Li1.5Al0.5Ge1.5(PO4)3 based on microwave sintering

Journal of Solid State Electrochemistry - We report effectiveness of dopants selected from group 13, such as B, Ga, and In, on the conductivity of Li1.5Al0.5Ge1.5(PO4)3 (LAGP) that is recognized as...     

Solution properties,unperturbed dimensions,and chain flexibility of poly(1‐adamantyl acrylate)

Poly(1‐adamantyl acrylate) (PAdA) exhibits much higher glass transition and degradation temperatures than other polyacrylates. However, the quantitative evaluation of the stiffness of this polymer chain has not been reported previously. In this study, the dilute solution properties and conformational characteristics of PAdA were evaluated using viscometry and scattering techniques. The unperturbed dimensions of this polymer were evaluated using the Burchard–Stockmayer–Fixman extrapolation and the touched‐bead wormlike chain model. The PAdA chain has a comparable persistence length, diameter per bead and characteristic ratio to poly(methyl methacrylate) and polystyrene. All these results indicate that PAdA is less flexible than common polyacrylates. In addition, the second virial coefficients (A₂) of PAdA in different solvents obtained by static light scattering were compared. Among the solvents investigated, tetrahydrofuran is a moderate solvent. Radius of gyration of a polymer sample in the various solvents ranged from 16.8 to 30.3 nm. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1526–1531     

Constructing finitely presented monoids which have no finite complete presentation

Squier (1987) showed that if a monoid is defined by a finite complete rewriting system, then it satisfies the homological finiteness condition FP₃, and using this fact he gave monoids (groups) which have solvable word problems but cannot be presented by finite complete systems. In the present paper we show that a monoid cannot have a finite complete presentation if it contains certain special elements. This observation enables us to construct monoids without finite complete presentation in a direct and elementary way. We give a finitely presented monoid which has (1) a word problem solvable in linear time and (2) linear growth but (3) no finite complete presentation. We also give a finitely presented monoid which has (1) a word problem solvable in linear time, (2) finite derivation type in the sense of Squier and (3) the property FP_∞, but (4) no finite complete presentation.     

An asymptotic approximation for EPMC in linear discriminant analysis based on two-step monotone missing samples

In this paper, we consider the expected probabilities of misclassification (EPMC) in the linear discriminant function (LDF) based on two-step monotone missing samples and derive an asymptotic approximation for the EPMC with an explicit form for the considered LDF. For this purpose, we also provide some results of the expectations for the inverted Wishart matrices in this paper. Finally, we conduct the Monte Carlo simulation for evaluating our result.     

Reactive ion etching of FePt using inductively coupled plasma

We propose a reactive ion etching (RIE) process of an L1₀-FePt film which is expected as one of the promising materials for the perpendicular magnetic recording media. The etching was carried out using an inductively coupled plasma (ICP) RIE system and an etching gas combination of CH₄/O₂/NH₃ was employed. The L1₀-FePt films were deposited on (1 0 0)-oriented MgO substrates using a magnetron sputtering system. The etching masks of Ti were patterned on the FePt films lithographically. The etch rates of ∼16 and ∼0 nm/min were obtained for the FePt film and the Ti mask, respectively. The atomic force microscopy (AFM) analyses provided the average roughness (R_a) value of 0.95 nm for the etched FePt surface, that is, a very flat etched surface was obtained. Those results show that the highly selective RIE process of L1₀-FePt was successfully realized in the present study.