Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

Picosecond time-resolved nonresonant ionization detected IR spectroscopy on 7-azaindole dimer

The picosecond time-resolved IR spectrum of the 7-azaindole dimer has been measured by picosecond time-resolved nonresonant ionization detected IR spectroscopy. This new time-resolved technique was developed by combining nonresonant ionization detected IR (NID-IR) spectroscopy with tunable picosecond IR and UV lasers. The time-resolved NID-IR spectrum from 2 600 cm^-1 to 3 800 cm^-1 shows a drastic change from 1.5 ps to 11 ps time evolution. A mode-specific vibrational redistribution has been suggested. Received 14 May 2002 / Received in final form 11 June 2002 Published online 13 September 2002     

ICTS measurements for p-GaN Schottky contacts

High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect.     

Resolving the discrepancy of 135 MeV pd elastic scattering cross sections and relativistic effects

Three precise measurements for elastic pd scattering at 135 MeV/A have been performed with the three different experimental setups. The cross sections are described well by the theoretical predictions based on modern nucleon-nucleon forces combined with three-nucleon forces. Relativistic Faddeev calculations show that relativistic effects are restricted to backward angles. This result supports the two measurements recently reported by RIKEN and contradicts the KVI data.     

Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

Ferroelectric-gate?field-effect?transistors?(FeFETs) with a Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si gate stack were fabricated using the metal-organic chemical vapor deposition (MOCVD) technique to prepare the SrBi₂Ta₂O₉ (SBT) ferroelectric layer. A?good threshold voltage (V _th) distribution was found for more than 90?n-channel FeFETs in one chip with a 170?nm SBT layer owing to the good film uniformity of the SBT layer deposited by MOCVD. The average memory window $(V_{\mathrm{w}}^{\mathrm{av}})$ and the standard deviations (σ _thl,σ _thr) of the left- and right-side branches of the drain-gate voltage curves of the FeFETs yielded a $V_{\mathrm{w}}^{\mathrm{av}}/(\sigma_{\mathrm{thl}} + \sigma_{\mathrm{thr}})$ value of 5.45, indicating that the FeFETs can be adapted for large-scale-integration. The electric field, the energy band profile in the gate stack, and the gate leakage current were also investigated at high gate voltages. We found that the effect of Fowler–Nordheim tunneling appeared under these conditions. Because of the tunneling injection and trapping of electrons into the gate insulators, the operation voltage ranges of the FeFETs were limited by this tunneling.     

Structure prediction and aromaticity of acenes and phenylenes series. A combination method between asymmetric Kekulé structures

The combination method between asymmetric Kekulé structures (CMAK) was expanded to the structure prediction of a series of acenes and phenylenes. The structures predicted by the CMAK correspond to those calculated by the ab initio molecular orbital (MO) and B3LYP density functional methods. The CMAK can characterize the structures. The aromaticity for the whole ring and each ring in the treated compounds was estimated by the index of deviation from aromaticity (IDA). The estimated aromaticity corresponds fairly well to the characterization of the structure predicted by the CMAK. The predicted structures of linear acenes reveal the aromaticity of the central ring and also explain its reactivity. The side ring in [n]phenacene shows high aromaticity. The critical difference in the structure and aromaticity for the central six‐membered ring of the isomers benzo[1,2:4,5]dicyclobutene and benzo[1,2:5,6]dicyclobutene was explained. Copyright © 2012 John Wiley & Sons, Ltd.     

Wetting mode transition of nanoliter scale water droplets during evaporation on superhydrophobic surfaces with random roughness structure

During evaporation, shape changes of nanoliter-scale (80-100 nL) water droplets were evaluated on two superhydrophobic surfaces with different random roughness (nm-coating, μm-coating). The square of the contact radius and the square of the droplet height decreased linearly with evaporation time. However, trend changes were observed at around 170 s (nm-coating) and around 150 s (μm-coating) suggesting a wetting mode transition. The calculated droplet radii for the wetting mode transition from the average roughness distance and the average roughness height of these surface structures were approximately equal to the experimental values at these trend changes. A certain level of correlation between the roughness size and droplet radius at the wetting mode transition was confirmed on surfaces with random roughness.     

Laser Stark spectroscopy of the ν4 band of CH3C15N: Fermi resonance with 3ν83

Laser Stark spectra for the ν₄ band of CH₃C¹⁵N have been measured by using CO₂ and N₂O lasers. Almost 650 resonances have been assigned to about 140 ro-vibrational transitions with J′ ≤ 34 and K ≤ 11. An anomaly of the rotational structure around K = 7 has been proved to be due to a Fermi interaction by analyzing each K subband separately. Observed data have been fitted to a model which includes ν₄-3ν₈³ Fermi coupling by the method of least squares. The standard deviation of observed from calculated frequencies is 4.6 MHz. Molecular constants derived are also listed.