Dependences of structural and electrical properties on thickness of polycrystalline Ga-doped ZnO thin films prepared by reactive plasma deposition

Polycrystalline Ga-doped (Ga content: 4 wt%) ZnO (GZO) thin films were deposited on glass substrates at 200 C by a reactive plasma deposition with DC arc discharge technique. The dependences of structural and electrical properties of GZO films on thickness, ranging from 30 to 560 nm, were investigated. Carrier concentration, n, and Hall mobility, μ, increases with increasing film thickness below 100 nm, and then the n remains nearly constant and the μ gradually increases until the thickness reaches 560 nm. The resistivity obtained of the order of 10⁻⁴ Ω cm for these films decreases with increasing film thickness: The highest resistivity achieved is 4.4×10⁻⁴ Ω cm with n of 7.6×10²⁰ cm⁻³ and μ of 18.5 cm²/V s for GZO films with a thickness of 30 nm and the lowest one is 1.8×10⁻⁴ Ω cm with n of 1.1×10²¹ cm⁻³ and μ of 31.7 cm²/V s for the GZO film with a thickness of 560 nm. X-ray diffraction pattern for all the films shows a hexagonal wurtzite structure with its strongly preferred orientation along the c-axis. Full width at half maximum of the (002) preferred orientation diffraction peak of the films decreases with increasing film thickness below 100 nm.     

Effect of ultrasonic irradiation on nucleation phenomena in a Na2HPO4.12H2O melt being used as a heat storage material

The effect of ultrasound on nucleation phenomena in the heat storage material Na2HPO4.12H2O was investigated by determining the primary nucleation probability and induction time, and by looking at heat generation phenomena in the initial stage of nucleation. The experimental results show that the primary nucleation probability dramatically increased, and the induction time decreased under the ultrasound irradiation, and in addition, the rate of temperature rise was dependent upon the ultrasonic output. Based on these results and the theoretical relationship between the number of primary nuclei and the heat generation rate, it is proposed that the number of primary nuclei depends upon the ultrasonic output.     

Soot formation characteristics in a lab-scale turbulent pulverized coal flame with simultaneous planar measurements of laser induced incandescence of soot and Mie scattering of pulverized coal

Soot formation characteristics of a lab-scale pulverized coal flame were investigated by performing carefully controlled laser diagnostics. The spatial distributions of soot volume fraction and the pulverized coal particles were measured simultaneously by laser induced incandescence (LII) and Mie scattering imaging, respectively. In addition, the radial distributions of the soot volume fraction were compared with the OH radical fluorescence, gas temperature and oxygen concentration obtained in our previous studies [1], [2]. The results indicated that the laser pulse fluence used for LII measurement should be carefully controlled to measure the soot volume fraction in pulverized coal flames. To precisely measure the soot volume fraction in pulverized coal flames using LII, it is necessary to adjust the laser pulse fluence so that it is sufficiently high to heat up all the soot particles to the sublimation temperature but also sufficiently low to avoid including a too large of a change in the morphology of the soot particles and the superposition of the LII signal from the pulverized coal particles on that from the soot particles. It was also found that the radial position of the peak LII signal intensity was located between the positions of the peak Mie scattering signal intensity and peak OH radical signal intensity. The region, in which LII signal, OH radical fluorescence and Mie scattering coexisted, expanded with increasing height above the burner port. It was also found that the soot formation in pulverized coal flames was enhanced at locations where the conditions of high temperature, low oxygen concentration and the existence of pulverized coal particles were satisfied simultaneously.     

Production of hyperpolarized nuclei for MRI

The project in producing the hyperpolarized ³He and ¹⁹F are addressed in pursuit of radiation free medical diagnosis. The program for production of the hyperpolarized ³He by the brute force method with the Pomeranchuk cooling and the rapid melting of the solid 3He started a few years ago, and is still on the way, while a new program for production of the hyperpolarized ¹⁹F by means of the PHIP (ParaHydrogen Induced Polarization) has just got started. Particular attention is placed upon a new idea of the hyperpolarization catalyst to be used for ¹⁹F.     

Amplitude modulation of submillimeter wave gyrotron output

Amplitude modulation of gyrotron by a small modulation of the anode voltage is calculated using an energy transfer formula. Experimental measurements using a submillimeter wave gyrotron are in good agreement. One hundred percent modulation of the output at frequencies up to several hundred kilohertz has been achieved with anode modulation levels of only a few percent. Numerical calculations lend further support to the experimental results.     

Theoretical study of resonant tunneling in rectangular double-, triple-, quadruple-, and quintuple-barrier structures

The transmission coefficient and the resonance condition in the one-dimensional rectangular double-, triple-, quadruple-, and quintuple-barrier structures are derived theoretically under the assumption of the constant tunneling effective mass. It is found that the resonance energies are different from the eigenvalues in the quantum well due to coupling between wells in the multiple-barrier (much more than triple-barrier) structures. It is confirmed that the transmission spectrum is a Lorentzian near to energies of resonance.     

Structural and optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

We studied the structural and optical properties of silicon (Si) nanoparticles (np-Si) prepared by pulsed laser ablation (PLA) in hydrogen (H₂) background gas. The mean diameter of the np-Si was estimated to be approximately 5 nm. The infrared absorption corresponding to Si-H_n (n=1,2,3) bonds was observed at around 2100 cm^-1, and a Raman scattering peak corresponding to crystalline Si was observed at around 520 cm^-1. These results indicate that nanoparticles are not an alloy of Si and hydrogen but Si nanocrystal covered by hydrogen or hydrogenated silicon. This means that surface passivated Si nanoparticles can be prepared by PLA in H₂ gas. The band-gap energy of np-Si prepared in H₂ gas (1.9 eV) was larger than that of np-Si prepared in He gas (1.6 eV) even though they are almost the same diameter. After decreasing the hydrogen content in np-Si by thermal annealing, the band-gap energy decreased, and reached the same energy level as np-Si prepared in He gas. Thus, the optical properties of np-Si were affected by the hydrogenation of the surface of np-Si. PACS 81.15.Fg; 61.46.+W; 78.67.Bf     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Beam-polarization asymmetries for the p(gamma-->, K+)Lambda and p(gamma-->, K+)Sigma(0) reactions for E(gamma)=1.5-2.4 GeV

Beam polarization asymmetries for the p(gamma-->,K+)Lambda and p(gamma-->,K+)Sigma(0) reactions are measured for the first time for E(gamma)=1.5-2.4 GeV and 0.6相似文献