Third order efficiency implies fourth order efficiency: A resolution of the conjecture of J. K. Ghosh

Under suitable regularity conditions, it is shown that a third order asymptotically efficient estimator is fourth order asymptotically efficient in some class of estimators in the sense that the estimator has the most concentration probability in any symmetric interval around the true parameter up to the fourth order in the class. This is a resolution of the conjecture by Ghosh (1994, Higher Order Asymptotics, Institute of Mathematical Statistics, Hayward, California). It is also shown that the bias-adjusted maximum likelihood estimator is fourth order asymptotically efficient in the class.     

A structure analysis of Ag-adsorbed Si(111) surface by LEED/CMTA

The Ag induced superstructures on the Si(111) surface have been studied by low energy electron diffraction constant momentum transfer averaging (LEED/CMTA) technique. The vertical displacements of the atoms are determined from the analysis of the specularly reflected (00) beam intensities. Unexpected behavior of the Ag atoms is clarified: For the √3 × √3-Ag surface it is verified that the Ag atoms are embedded in the first double layer of Si, leading to a considerable rearrangement of the substrate. In contrast, for the 3 × 1-Ag surface, the Ag atoms are riding on the Si surface and the reconstruction of the substrate is small.     

LEED-AES study of the AuSi(100) system

The system Au/Si(100) has been studied using LEED and AES. Au films grow as Au(111) | Si(100) having six azimuthally rotated orientations at low deposition temperatures below 50°C after the formation of intermediate gold suicide layers. Crystalline gold silicide thin layers are formed on the Au(111) film after heat treatment at 100–400°C. Two types of suicide LEED pattern observed seem to have no correlation with crystallographic data reported on quenched alloy films. Heat treatment over 450°C leads to agglomeration of the film, producing a series of Au-induced superstructures. Heat treatment of the Au film over 1000°C regenerates the clean Si surface accompanied with many etch pits.     

Inelastic effect in low energy ion-surface collisions: He+Au,Ag

Energy distributions of He⁺ ions scattered by Au and Ag surfaces are measured by an ISS system with high energy resolution, at a scattering angle of 90° and at incident ion energies ranging from 277 to 977 eV. It is found that the observed peak energies deviate toward the low energy side by several electron-volts with respect to the calculated elastic single collision energies. Both the deviation Q' and the inelastic loss energy Q are plotted as a function of incident ion energy for the Au surface.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

Broadly tunable UV-blue picosecond pulsed laser and its application for biological imaging

We have achieved a rapid and random wavelength tuned picosecond pulsed laser and a widely tunable UV-blue picosecond pulsed laser by using the intracavity second harmonic generation of the laser. The tuning range was from 384 to 434 nm with picosecond pulse oscillation. In addition, we demonstrated biological imaging using a fluorescent protein excited by the widely tunable UV-blue picosecond pulsed laser. We found that the laser is suitable for biological imaging using the fluorescent protein as an excitation light source without damages.     

Refined holographic entanglement entropy for the AdS solitons and AdS black holes

We consider the refinement of the holographic entanglement entropy for the holographic dual theories to the AdS solitons and AdS black holes, including the corrected ones by the Gauss–Bonnet term. The refinement is obtained by extracting the UV-independent piece of the holographic entanglement entropy, the so-called renormalized entanglement entropy which is independent of the choices of UV cutoff. Our main results are: (i) the renormalized entanglement entropies of the _AdSd+1${\mathrm{AdS}}_{d+1}$ soliton for d=4,5$d=4,5$ are neither monotonically decreasing along the RG flow nor positive-definite, especially around the deconfinement/confinement phase transition; (ii) there is no topological entanglement entropy for AdS₅ soliton even with Gauss–Bonnet correction; (iii) for the AdS black holes, the renormalized entanglement entropy obeys an expected volume law at IR regime, and the transition between UV and IR regimes is a smooth crossover even with Gauss–Bonnet correction; (iv) based on AdS/MERA conjecture, we postulate that the IR fixed-point state for the non-extremal AdS soliton is a trivial product state.     

Smoothness of the Distribution of the Supremum of a Multi-dimensional Diffusion Process

In this article we deal with a multi-dimensional diffusion whose corresponding diffusion vector fields are commutative, and study its joint distribution at the time when a component attains its maximum on finite time interval. Under regularity and ellipticity conditions we shall show the smoothness of this joint distribution.