Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518

Ga _x In_1–x As _y P_1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the Ga _x In_1–x As _y P_1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm^–1.     

非线性介质F－P干涉仪光束输出特性的理论研究

本文对准直光束射入含有非线性介质的Ｆ－Ｐ干涉仪内的光场分布进行了研究．由于非线性介质与光的作用，从Ｆ－Ｐ干涉仪出射的光束截面上的相移随位置的改变呈一定的分布，进而引起了干涉仪的透射率和输出光束重新分布。当干涉仪两个面的反射系数较大时，输出光束截面出现光强和相移的跃变．这种现象与以前在平面波假设下所得的光强分布所得结论有较大的不同．     

Parameter variation in low-quartz between 94 and 298K

The structure of low quartz has been refined at 94, 115, 150, 190, 240 and 298K using Mo Kα intensities up to 2θ = 90° with residuals around 1.25%. The major structural change from 94 to 298K is an increase of the SiOSi angle from 142.69(4) to 143.65(5) corresponding to a rotation by ～0.8° of a rigid SiO₄ tetrahedron around the crystallographic 2-axis through its central Si. The orientations of the principal axes of vibration of Si and O do not change significantly with temperature. The temperature dependence of the mean-square displacement of O along its principal axes follows the Debye formula of thermal motion quite well, while for Si the experimental slopes are significantly less than their calculated values.     

Proprietes magnetiques et electriques de la phase Ca2MnO4−xFx

The magnetic properties of the antiferromagnetic Ca₂MnO_4?x solid solution (0?x?0,30) are essentially characterized by a weak ferromagnetism with a maximum value for x = 0,20. Spin canting results from the competition between the antiferromagnetic super-exchange couplings and the double exchange ferromagnetic interactions due to the presence of manganese in oxidation states + III and + IV. It seems independent of the site of fluorine in the framework. The variation of Weiss constant and ordering temperature withx is also discussed. Electrical conductivity results from a hopping mechanism between Mn³⁺ and Mn⁴⁺ ions. The electrical conductivity presents a maximum when x = 0.10, corresponding to an activation energy minimum.     

Search for magnetic fields due to anyons in high-T c superconductors

We have searched for anomalous internal magnetic fields in highT _c materials which are predicted to occur in anyon and flux phase models of superconductivity. The magnitude, anisotropy and temperature dependence of the observed fields inc-axis oriented samples of sintered YBa₂CuO₃O₇ and of thick-film Bi₂Sr₂CaCu₂O₈ are consistent with a conventional nuclear dipolar origin. An upper limit of ≲0.08 mT is set for any anomalous magnetic fields along thec-axis atμ ⁺ sites in bulk CuO₂ superconductors.     

Reexamination of the I2 spectrum near the B(3Π0u+) state dissociation limit

The disagreement of Danyluk and King's (Chem. Phys.25, 343 (1977)) rotational constants for levels lying near the dissociation limit of B-state I₂ with the mechanical behavior predicted by near-dissociation theory is investigated. The discrepancies are shown to be much too large to be explained by either the neglect of centrifugal distortion effects in the original analysis or by rotational or spin-rotation coupling to a nearby repulsive 1_u state. These differences are therefore attributed to experimental error, a conclusion which is confirmed by more recent experimental results. A reanalysis of the best available data for levels near the dissociation limit of B-state I₂ then yields improved values for the B-state dissociation limit $\text{D}$ = 20 043.16 (±0.02) cm^?1 of the vibrational index at dissociation v_$\text{D}$ = 87.32 (±0.04) and of the long-range potential constant $\text{C}{}_5\text{= 2.88 (±0.03) × 10}{}^5\text{cm}{}^{\mathrm{?1}}\text{A}\text{?}{}^5$. This in turn implies a slightly improved ground-state dissociation energy of $\text{D}$₀ = 12 440.18 (±0.02) cm^?1.     

微通道板噪声因子与工作电压关系研究

为了解决微通道板噪声因子的测量问题,提出了一种测量像增强器光电阴极灵敏度和信噪比,从而测量出微通道板噪声因子的方法 .根据该方法,分别在不同阴极电压、微通道板电压以及阳极电压条件下测量了微通道板的噪声因子.测量结果表明,当阴极电压、微通道板电压以及阳极电压分别变化时,微通道板的噪声因子会随之变化.微通道板电压对噪声因子的影响最大,阳极电压的影响最小.微通道板电压每增加100 V,噪声因子大约增加0.11,而阳极电压每增加100 V,噪声因子大约增加3.3×10-4.微通道板工作电压提高,意味着电子碰撞能量提高,同时也意味着二次电子发射系数提高,而根据现有微通道板噪声理论,微通道板的噪声因子会减小,但实测结果却相反.造成这一矛盾的原因是在现有微通道板噪声理论中,仅仅考虑了二次电子发射系数、探测率、电子碰撞几率的因数,而未考虑到电子碰撞能量的因数,因此噪声理论需要进行修正.     

The electronic properties and electron transport of sawtooth penta-graphene nanoribbon under uniaxial strain: ab-initio study

ABSTRACT

The electronic properties and electron transport of a sawtooth penta-graphene nanoribbon (SSPGNR) under uniaxial strains are theoretically studied by density-functional theory (DFT) in combination with the non-equilibrium Green's function formalism. We investigated the electronic structures and the current–voltage (I–V) characteristics of the SSPGNRs under a sequence of uniaxial strains in range from 10% compression to 10% stretch. In this strained range, carbon atoms still keep a pentagon network, but with the changing bond lengths. The C–C bond lengths change almost linearly with the tolerable strain. The value of the band gap of SSPGNRs can be depicted as a parabola under uniaxial strain. Our calculations show that the current is monotonous increase with compressive strain at the same applied bias voltage. In case of tensile strain, the variable rule of the current is different that it increases at first and decrease later. The fundamental physical properties (band structure, I–V characteristic) of SSPGNRs seem to be more sensitive to compressive strain than the stretch strain. The current intensity of the compressive-SSPGNR is by 2 orders of magnitude compared to that of the tensile-SSPGNR at the same strain in range from 6% to 10%. The results obtained from our calculations are beneficial to practical applications of these strained structures in SSPGNRs-based electromechanical devices.