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51.
Jan-Christoph Eichler Robert A. Skutnik Anupam Sengupta Marco G. Mazza Martin Schoen 《Molecular physics》2019,117(23-24):3715-3733
Anisotropic fluids (e.g. liquid crystals) offer a remarkable promise as optofluidic materials owing to the directional, tunable, and coupled interactions between the material, flow, and the optical fields. Here we present a comprehensive in silico treatment of this anisotropic interaction by performing nonequilibrium molecular dynamics simulations. We quantify the response of a nematic liquid crystal (NLC) undergoing a Poiseuille flow in the Stokes regime, while being illuminated by a laser beam incident perpendicular to the flow direction. We adopt a minimalistic model to capture the interactions, accounting for two features: first, the laser heats up the NLC locally; and second, the laser polarises the NLC and exerts an optical torque that tends to reorient molecules of the nematic phase. Because of this reorientation the liquid crystal exhibits small regions of biaxiality, where the nematic director is one symmetry axis and the axis of rotation for the reorientation of the molecules is the other one. We find that the relative strength of the viscous and the optical torques mediates the flow-induced response of the biaxial regions, thereby tuning the emergence, shape and location of the regions of enhanced biaxiality. The mechanistic framework presented here promises experimentally tractable routes toward novel optofluidic applications based on material-flow-light interactions. 相似文献
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Fabrizio Colombo Samuele Mongodi Marco Peloso Stefano Pinton 《Mathematical Methods in the Applied Sciences》2019,42(5):1662-1686
Let e?, for ? = 1,2,3, be orthogonal unit vectors in and let be a bounded open set with smooth boundary ?Ω. Denoting by a point in Ω, the heat equation, for nonhomogeneous materials, is obtained replacing the Fourier law, given by the following: into the conservation of energy law, here a, b, are given functions. With the S‐spectrum approach to fractional diffusion processes we determine, in a suitable way, the fractional powers of T. Then, roughly speaking, we replace the fractional powers of T into the conservation of energy law to obtain the fractional evolution equation. This method is important for nonhomogeneous materials where the Fourier law is not simply the negative gradient. In this paper, we determine under which conditions on the coefficients a, b, the fractional powers of T exist in the sense of the S‐spectrum approach. More in general, this theory allows to compute the fractional powers of vector operators that arise in different fields of science and technology. This paper is devoted to researchers working in fractional diffusion and fractional evolution problems, partial differential equations, and noncommutative operator theory. 相似文献
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The manifold of coupling constants parametrizing a quantum Hamiltonian is equipped with a natural Riemannian metric with an operational distinguishability content. We argue that the singularities of this metric are in correspondence with the quantum phase transitions featured by the corresponding system. This approach provides a universal conceptual framework to study quantum critical phenomena which is differential geometric and information theoretic at the same time. 相似文献
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Ast CR Henk J Ernst A Moreschini L Falub MC Pacilé D Bruno P Kern K Grioni M 《Physical review letters》2007,98(18):186807
The long-range ordered surface alloy Bi/Ag(111) is found to exhibit a giant spin splitting of its surface electronic structure due to spin-orbit coupling, as is determined by angle-resolved photoelectron spectroscopy. First-principles electronic structure calculations fully confirm the experimental findings. The effect is brought about by a strong in-plane gradient of the crystal potential in the surface layer, in interplay with the structural asymmetry due to the surface-potential barrier. As a result, the spin polarization of the surface states is considerably rotated out of the surface plane. 相似文献
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Strong Asymptotics of the Orthogonal Polynomials with Respect to a Measure Supported on the Plane 下载免费PDF全文
We consider the orthogonal polynomials with respect to the measure over the whole complex plane. We obtain the strong asymptotic of the orthogonal polynomials in the complex plane and the location of their zeros in a scaling limit where n grows to infinity with N . The asymptotics are described in terms of three (probability) measures associated with the problem. The first measure is the limit of the counting measure of zeros of the polynomials, which is captured by the g‐function much in the spirit of ordinary orthogonal polynomials on the real line. The second measure is the equilibrium measure that minimizes a certain logarithmic potential energy, supported on a region K of the complex plane. The third measure is the harmonic measure of K c with a pole at ∞ . This appears as the limit of the probability measure given (up to the normalization constant) by the squared modulus of the nth orthogonal polynomial times the orthogonality measure, i.e., The compact region K that is the support of the second measure undergoes a topological transition under the variation of the parameter in a double scaling limit near the critical point given by we observe the Hastings‐McLeod solution to Painlevé II in the asymptotics of the orthogonal polynomials. © 2014 Wiley Periodicals, Inc. 相似文献
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Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool 下载免费PDF全文
Muzhi Tang Jia Ge Johnson Wong Zhi Peng Ling Torsten Dippell Zhenhao Zhang Marco Huber Manfred Doerr Oliver Hohn Peter Wohlfart Armin Gerhard Aberle Thomas Mueller 《固体物理学:研究快报》2015,9(1):47-52
In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (~100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s–1 and an implied open‐circuit voltage (Voc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献