Information-theoretic differential geometry of quantum phase transitions

The manifold of coupling constants parametrizing a quantum Hamiltonian is equipped with a natural Riemannian metric with an operational distinguishability content. We argue that the singularities of this metric are in correspondence with the quantum phase transitions featured by the corresponding system. This approach provides a universal conceptual framework to study quantum critical phenomena which is differential geometric and information theoretic at the same time.     

Giant spin splitting through surface alloying

The long-range ordered surface alloy Bi/Ag(111) is found to exhibit a giant spin splitting of its surface electronic structure due to spin-orbit coupling, as is determined by angle-resolved photoelectron spectroscopy. First-principles electronic structure calculations fully confirm the experimental findings. The effect is brought about by a strong in-plane gradient of the crystal potential in the surface layer, in interplay with the structural asymmetry due to the surface-potential barrier. As a result, the spin polarization of the surface states is considerably rotated out of the surface plane.     

Strong Asymptotics of the Orthogonal Polynomials with Respect to a Measure Supported on the Plane

We consider the orthogonal polynomials with respect to the measure over the whole complex plane. We obtain the strong asymptotic of the orthogonal polynomials in the complex plane and the location of their zeros in a scaling limit where n grows to infinity with N . The asymptotics are described in terms of three (probability) measures associated with the problem. The first measure is the limit of the counting measure of zeros of the polynomials, which is captured by the g‐function much in the spirit of ordinary orthogonal polynomials on the real line. The second measure is the equilibrium measure that minimizes a certain logarithmic potential energy, supported on a region K of the complex plane. The third measure is the harmonic measure of K ^c with a pole at ∞ . This appears as the limit of the probability measure given (up to the normalization constant) by the squared modulus of the n^th orthogonal polynomial times the orthogonality measure, i.e., The compact region K that is the support of the second measure undergoes a topological transition under the variation of the parameter in a double scaling limit near the critical point given by we observe the Hastings‐McLeod solution to Painlevé II in the asymptotics of the orthogonal polynomials. © 2014 Wiley Periodicals, Inc.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Iodonium Metathesis Reactions

A metathesis reaction occurs when a diaryliodonium triflate is heated with an aryl iodide, resulting in the formation of a new diaryliodonium triflate.