He-Ne激光选育高木质素降解率的白腐真菌Lx

用He-Ne激光对一株木质素降解活性较高的白腐真菌L₁进行选育.将该菌的菌丝体和原生质体多次照射诱变,结果得出:在波长632.5nm,用功率为6mW和7mW照射该菌的菌丝体,选育出的菌株L₆和L₇木质素降解率可达38.1%和39.88%,比出发菌株L₁提高了33%和39%.用功率9mW的He-Ne激光辐照原生质体,照射20min时,原生质体致死率已达100%.在照射时间为10min时,选育出一株木质素降解率达43.03%的菌株L_x,比出发菌株L₁提高了50%.同工酶分析显示该菌株发生了稳定的遗传突变.     

Multi-photon fluorescence microscopy--the response of plant cells to high intensity illumination

Multi-photon fluorescence microscopy has been cited for its advantage in increased depth penetration due to low linear absorption and scattering coefficient of biological specimen in the near infrared (NIR) range. Because of the need of high peak power for efficiently exciting two-photon fluorescence, the relationship between cell damage and peak power has become an interesting and much debated topic in the applications of multi-photon fluorescence microscopy. It is conceivable that at high illumination intensity, non-linear photochemical processes have impacts on cell physiology and viability in ways much different from low illumination in the linear domain. In this article, we discuss some of the issues in two-photon fluorescence microscopy, including the degree of transparency of the specimen, a comparison of single- and two-photon excited fluorescence spectra, and the cell damage under high intensity illumination, using plant cells as a model.     

LaF分子基态X~1Σ~ 分析势能函数计算

用原子分子反应静力学原理导出LaF分子可能的电子状态和离解极限。在相对论有效核芯势RECP(RelativisticEffectiveCorePotential)近似下 ,用密度泛函理论中的B3LYP方法优化了LaF分子单、三重态平衡几何结构 ,计算了基态X1Σ 的振动基频和离解能。在计算出来的一系列单点势能基础上 ,用非线性最小二乘方法拟合出基态Murrell Sorbie势能曲线 ,得到分析势能函数 ,由此计算出相应光谱常数ωe、Be、αe、ωeχe的理论值并和实验测量的振转光谱比较 ,结果非常吻合。另外还比较了用两种不同有效势得到的分析势能函数和光谱参数 ,以能量一致相对论有效势ECEP(EnergyCosistentRelativisticEffectivePotential)得到的结果最好。     

NON-THERMAL RADIATION FROM A NON-KERR－NEWMAN BLACK HOLE

In the spacetime of a charged spinning black hole, the distribution of particle energy levels has been studied. Near the event horizon of such a black hole a crossing of the particle energy levels exists, which leads to the occurrence of non-thermal radiation of the black hole. This quantum effect is non-thermal and also different from those of the Kerr and Kerr－Newman black holes.     

Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes

Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In(0.67) Ga(0.33) As(0.72) P(0.28) quantum wells near the n -cladding layer and the two In(0.53) Ga(0.47) As quantum wells near the p -cladding layer, all bounded by In(0.86) Ga(0.14) As(0.3)P(0.7) barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 microm, and the FWHM could be near 300 nm.     

改进的Herriott型光学长程池

用凹面反射镜和平面反射镜组成结构简单、光路易调的光多次反射装置,计算了这种光学系统的稳定性条件。考察实际入射光束的直径和发射角,给出了最大反射次数的求法。制成适用于钛宝石激光光声光谱仪的光56次通过的长程池。理论计算的反射光斑分布与实验观测一致。这个技术有利于提高光声光谱和吸收光谱的探测灵敏度。     

Vaidya-Bonner黑洞的费米子隧穿

运用费米子隧穿的理论,对Vaidya-Bonner黑洞的费米子Hawking辐射进行研究.使用随动坐标变换,并假设γ^μ矩阵的一个合理形式,从而得到了Vaidya-Bonner黑洞的自旋为1/2的粒子的隧穿辐射行为. 关键词： Vaidya-Bonner黑洞 Dirac方程 Hawking辐射 费米子隧穿     

电场中里德伯原子动力学性质的半经典理论研究

利用闭合轨道理论和Poincaré截面两种方法研究了鞍点附近电场中高里德伯态Li原子的动力学性质.由于原子实的作用,体系是混沌的,闭合轨道和周期轨道在混沌体系中并存,但二者在Poincaré截面上的反映是不同的.讨论了两种半经典理论在研究混沌体系时的联系,得到了仅靠闭合轨道理论得不到的信息. 关键词： Poincaré截面 回归谱 Stark效应     

利用偏振干涉成像光谱仪进行偏振检测的最佳角度分析

利用偏振干涉成像光谱仪进行偏振探测,这一方法将偏振测量与干涉成像光谱技术相结合,一方面能提供辐射测量所不能提供的物体偏振信息,另一方面又可获取目标的空间图像和光谱,具有比辐射测量更高的准确度.在简要分析了利用偏振干涉成像光谱仪进行偏振检测的理论基础上,深入研究了偏振检测的方法,分析比较了目前常用的偏振探测角度（45°,60°）对偏振度探测的影响.进一步计算推导出偏振测量的最优探测角度,将之与以往常用的探测角度进行了分析比较,证明了此最佳探测角度可以有效地减小偏振误差、提高偏振探测的精度.这将极大地提高偏振干涉成像光谱仪的应用范围,为新型偏振干涉成像光谱技术的研究以及仪器研制提供重要的理论依据. 关键词： 偏振检测 偏振干涉成像光谱仪 探测角 Savart偏光镜     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.