Bound entangled states of four qubits in the tomographic-probability representation

We discuss the entanglement phenomenon on the example of the Smolin state of four qubits. This state is known as the bound entangled state and its spin tomogram is found in an explicit form. We apply the qubit-portrait method for investigating the violation of the Bell inequalities, since this approach provides another tool to prove the entanglement properties of the four-qubit state under consideration.     

Different entanglement dynamics and transfer behaviors due to dipole-dipole interaction

We analyze entanglement dynamics and transfer in a system composed of two initially correlated two-level atoms, in which each atom is coupled with another atom interacting with its own reservoir. Considering atomic dipole-dipole interactions, the results show that dipole-dipole interactions restrain the entanglement birth of the reservoirs, and a parametric region of dipole-dipole interaction strength exists in which the maximal entanglement of two initially uncorrelated atoms is reduced. The transfer of entanglement shows obvious different behaviors in two initial Bell-like states.     

Measurement of Inherent Material Density of Nanoparticle Agglomerates

We describe a new technique to measure the size dependent inherent material density of chain agglomerate particles. Measurements were carried out for diesel soot and aluminum/alumina agglomerate particles in the nanometer size range. Transmission electron microscopy was used to measure the volumes of agglomerate particles that were preselected by mass using an aerosol particle mass analyzer. We found that the density of diesel exhaust particles increased from 1.27 to 1.78g/cm³ as particle mobility size increased from 50 to 220nm. When particles are preheated to remove volatile components, the density was 1.77±0.07g/cm³, independent of particle size. The densities measured after heating correspond to the inherent material density of diesel soot. Measurements with aluminum nanoparticles were made downstream of a furnace where aluminum (Al) was converted to alumina (Al₂O₃). From measurements of inherent material density we were able to infer the extent of reaction, which varied with furnace temperature.     

脉冲激光烧蚀碲镉汞材料的等离子体发射谱

脉冲激光辐照处于不同背景气压下的Hg0.8Cd0.2Te材料表面,用时间和空间分辨诊断技术探测了激光照射后产生的等离子体发射谱,根据所获得的飞行时间谱测量了等离子体中粒子的出射速度,结果表明粒子速度随着出射距离的增加迅速减小,且背景气压对出射速度有很大的影响,而激光能量对粒子速度的影响不大。另外根据谱线的展宽计算了等离子体中的电子密度,结果表明,电子密度在激光辐照样品后的短时间内迅速减小,且电子密度最大的位置不是出现在靶的表面而是在距表面一定距离处。     

Surface structure of low-coveraged Cs on Si(0 0 1)-() system

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83±0.05 Å from the second layer of Si(0 0 1) surface.     

Measurement of the muonic branching fractions of the narrow upsilon resonances

The decay branching fractions of the three narrow Upsilon resonances to mu(+)mu(-) have been measured by analyzing about 4.3 fb(-1) e(+)e(-) data collected with the CLEO III detector. The branching fraction B(Upsilon(1S)-->mu(+)mu(-))=(2.49+/-0.02+/-0.07)% is consistent with the current world average, but B(Upsilon(2S)-->mu(+)mu(-))=(2.03+/-0.03+/-0.08)% and B(Upsilon(3S)-->mu(+)mu(-))=(2.39+/-0.07+/-0.10)% are significantly larger than prior results. These new muonic branching fractions imply a narrower total decay width for the Upsilon(2S) and Upsilon(3S) resonances and lower other branching fractions that rely on these decays in their determination.     

Velocity renormalization and carrier lifetime in graphene from the electron-phonon interaction

We present a first-principles investigation of the phonon-induced electron self-energy in graphene. The energy dependence of the self-energy reflects the peculiar linear band structure of graphene and deviates substantially from the usual metallic behavior. The effective band velocity of the Dirac fermions is found to be reduced by 4%-8%, depending on doping, by the interaction with lattice vibrations. Our results are consistent with the observed linear dependence of the electronic linewidth on the binding energy in photoemission spectra.     

Comment on “An enhanced polarization mechanism for the metal cations modified amorphous TiO2 based electrorheological materials” by Qing Wu, Bin Yuan Zhao, Chen Fang and Ke Ao Hu

Comments on a recent article on an enhanced polarization mechanism for the metal cations modified amorphous TiO₂ based electrorheological materials are presented, based upon an examination of the yield stress, which is a function of electric-field strength, of the materials. Using the deduced critical electric-field strengths, we find that the universal yield stress equation proposed collapses the data given by Qing Wu, Bin Yuan Zhao, Chen Fang, Ke Ao Hu, Eur. Phys. J. E 17, 63 (2005), onto a single curve.     

Native oxide buried InAlAs ridge waveguide laser diode

InAlAs wet thermal oxidation process was adopted to fabricate ridge waveguide laser diodes. First, applying the oxidation process on the whole etched surface of an InAlAs upper cladding layer, we formed a current blocking and optical confining layer of ridge waveguide laser diode. This is a self-aligned structure, which makes the laser diode fabrication steps much simpler and etching-depth control less important. Assessment of the fabricated laser diode revealed that current-voltage characteristics and slope efficiency did not worsen, and threshold current was reduced by the oxidation process. PACS 85.35.Be; 42.55.Px