Shallow Donors and Deep-Level Color Centers in Bulk AlN Crystals: EPR, ENDOR, ODMR and Optical Studies

The results of studies of shallow donors and deep-level color centers in bulk AlN crystals are presented. Two shallow donors (presumably oxygen located on the nitrogen site and carbon located on the aluminum site) are suggested to exhibit the DX-relaxation. Third shallow donor (presumably silicon on the Al site) shows the shallow donor behavior up to the room temperature and can be observed without light excitation at temperatures above 200 K. The values of the Bohr radius of the shallow donors are estimated. The structure of deep-level color centers (neutral nitrogen vacancy V _N) in bulk AlN crystals is determined and analyzed by electron paramagnetic resonance, electron-nuclear double resonance, optical absorption and thermoluminescence induced by X-ray irradiation. Spin-dependent recombination processes in AlN crystals are studied by means of optically detected magnetic resonance.     

Determination of the composition and content of pulsed cluster beams from time-of-flight mass spectra of cluster fragments

The properties of a superconducting flux quantum bit (qubit) in the quasidispersive mode, where the frequency of a probe signal is lower than the qubit excitation frequency but is close to it, have been experimentally studied. It has been shown that all parameters of the qubit inductively coupled to a coplanar resonator can be determined at the single-frequency excitation from the analysis of the frequency responses of the transmission of the probe signal at the output of this resonator. Under the additional excitation of the qubit by the signal at the second harmonic of the cavity, resonance dips have been observed because of resonance between the probe signal and induced Rabi splitting. It has been shown that the positions of these dips are in good agreement with the parameters of the qubit that are obtained by analyzing the amplitude–frequency response within the width of the fundamental resonance frequency.     

Growth of Pt thin films on WSe2

The morphology and structure of Pt deposited on a WSe₂(0 0 0 1) van der Waals surface have been investigated by reflection high energy electron diffraction and scanning tunneling microscopy. At room temperature, the initial growth is characterized by the formation of three-dimensional fcc Pt islands with (1 1 1) orientation. In contrast, at higher temperatures of about 450 °C the formation of a novel chemically ordered Pt-Se alloy is observed. Based on the diffraction patterns, a tetragonal DO₂₂-type structure of a Pt₃Se compound is suggested. With increasing Pt thickness, this chemically ordered alloy disappears and an additional superstructure occurs, which is accompanied by the coalescence of the islands. The observed superstructure is attributed to a strong Se diffusion towards the growth surface, forming most likely a PtSe₂ alloy with the CdI₂-type layered structure on the top surface. Due to the lateral lattice mismatch between the Pt(1 1 1) layers and the PtSe₂(1 1 1) top layer, a Moiré pattern with a period of 1.1 nm is created, which might be used as a long-range atomic pattern for further nanostructure growth.     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Multiple infrared photon absorption in OsO4

Multiple ir photon absorption spectra (MPAS) of OsO₄ are obtained in the range of energy fluencies from 3·10⁻² to 1.26 J/cm². A possible interpretation of MPAS is given on the basis of weak forbidden rovibrational transitions. The stepwise character of the absorption on the laser energy fluence is observed.     

Raman spectroscopy of infrared multiple-photon excited molecules

The method of spectroscopy of spontaneous Raman scattering (RS) with time resolution has been applied for the first time to diagnose the process of multiphoton ir molecular excitation (MPE). Some aspects of RS diagnostics of MPE processes are being analyzed. It has been shown experimentally on SF₆ and CF₃I molecules that it is possible to study such important characteristics of excitation process as the fraction of molecules involved in the process of excitation, vibrational energy distribution of molecules, stochastization of inner molecular energy.     

Influence of collisions and pulse intensity on multiple photon absorption in SF6

Using a pyroelectric detector, the multiple photon absorption (MPA) of the SF₆ molecule in a wide range of pressures (10^-3 -1 torr) has been studied. The significant role of collisions in MPA has been shown. The fraction of molecules excited under essentially collisionless conditions has been defined. It is shown that under collisionless excitation of SF₆ (p < 10^-2 torr) at energy fluences E < 10^-1 J/cm² the intensity of the laser pulse plays the essential role, while in presence of collisions MPA is determined mainly by the energy fluence in the pulse.     

Formation of low-temperature deformation-induced segregations of nickel in Fe–Ni-based austenitic alloys

ABSTRACT

The authors present the results of an investigation in Fe–Ni-Cr austenitic alloys of the low-temperature deformation-induced segregations of nickel that form in the micro regions being (i) located close to grain- and subgrain boundaries and (ii) characteristic of the concentration and magnetic inhomogeneities indicated by the appearance of a dark diffraction contrast at the electron diffraction patterns taken from these regions typical (at the same time) of an enhanced value of Curie temperature. The observed effects were connected with the micro distortions caused by the local change of lattice parameter because of an increase in nickel concentration, as well as in the result of a magnetostriction dilatation. Using methods of the X-ray energy dispersive spectroscopy (XEDS) and atomic-probe body-section radiography (tomography – APT) has made it possible to determine the borders of those regions of austenite that were characteristic of an enhanced concentration of nickel in the fields of the localisation of a deformation-induced segregation of nickel in the vicinity of grain (subgrain) boundaries of austenitic alloys of the types Fe–13Cr–30Ni and Fe–37Ni–3Ti.     

Determination of the spatial profiles of all components of the quadratic susceptibility tensor \hat \chi ^{(2)} (z, 2ω; ω, ω) of a one-dimensionally inhomogeneous absorbing medium

For a one-dimensionally inhomogeneous plate whose linear dielectric properties are also inhomogeneous and are characterized by a diagonal permittivity tensor, it is proved that the spatial profiles of all components of the complex quadratic susceptibility tensor $\hat \chi ^{(2)} $ (z, 2??; ??, ?? responsible for the second harmonic generation can be uniquely determined, and an appropriate method is proposed. To implement this method, one should measure the complex coefficient of transformation of a fundamental plane wave incident on the plate into a reflected second-harmonic wave in a certain range of angles of incidence. By varying the plane of incidence of the wave and (or) its polarization and measuring the coefficients of transformation into s- and p-polarized waves of double frequency, one can uniquely determine the spatial profiles of all components of the quadratic susceptibility tensor. The method involves the measurement of the intensities of the second-harmonic waves generated under special conditions with the use of two auxiliary reference plates and thus allows one to avoid complicated phase measurements.     

Elastic dipoles in the model of single-crystal and amorphous copper

The characteristic values of the elastic polarizability tensor components of point defects in crystalline and amorphous copper, which determine changes in the elasticity tensor components upon introduction of defects, have been found using the molecular dynamics method. A relation of the elastic polarizability tensor with the main parameter of the interstitialcy theory, i.e., shear susceptibility, has been established. An analysis of the elastic polarizability tensors of defects in crystalline and amorphous copper has demonstrated that, in a noncrystalline structure, there are specific atomic configurations that under deformation manifest themselves similarly to elastic dipoles (interstitial atoms in a dumbbell configuration) in single-crystal copper.