Symmetry results for decay solutions of semilinear elliptic systems on half spaces

In this paper, we prove that the decaying positive solutions of semi-linear elliptic systems on the half space with Neumann type condition is symmetric with respect to a line orthogonal to the boundary hyperplane. The monotonicity result is also obtained. Our methods employ the Alexandrov-Serrin method of moving planes combined with Hopf’s lemma at a corner. Our result can be applied to the Lane-Emden system and the stationary Schrödinger system.     

保护介质对爆轰固相产物生成的影响

 通过爆轰合成超细金刚石实验，对装药在不同环境下引爆后得到的固相碳产物进行比较分析，研究不同介质如氮气、水、冰、遇热分解的盐等对爆轰产物中固相碳形成的影响，同时提出用石墨化程度来比较这种影响。结果显示，介质对爆轰产物中固相碳的石墨化和超细金刚石的保护有着重要的作用。几种介质中水的保护效果较好。     

On the Generalized Feynman–Kac Transformation for?Nearly Symmetric Markov Processes

Suppose that X is a right process which is associated with a non-symmetric Dirichlet form $(\mathcal{E},D(\mathcal{E}))$ on L ²(E;m). For $u\in D(\mathcal{E})$ , we have Fukushima??s decomposition: $\tilde{u}(X_{t})-\tilde{u}(X_{0})=M^{u}_{t}+N^{u}_{t}$ . In this paper, we investigate the strong continuity of the generalized Feynman?CKac semigroup defined by $P^{u}_{t}f(x)=E_{x}[e^{N^{u}_{t}}f(X_{t})]$ . Let $Q^{u}(f,g)=\mathcal{E}(f,g)+\mathcal{E}(u,fg)$ for $f,g\in D(\mathcal{E})_{b}$ . Denote by J ₁ the dissymmetric part of the jumping measure J of $(\mathcal{E},D(\mathcal{E}))$ . Under the assumption that J ₁ is finite, we show that $(Q^{u},D(\mathcal{E})_{b})$ is lower semi-bounded if and only if there exists a constant ?? ₀??0 such that $\|P^{u}_{t}\|_{2}\leq e^{\alpha_{0}t}$ for every t>0. If one of these conditions holds, then $(P^{u}_{t})_{t\geq0}$ is strongly continuous on L ²(E;m). If X is equipped with a differential structure, then this result also holds without assuming that J ₁ is finite.     

基于表面阻抗边界条件的等离子体薄涂层电磁散射的时域有限差分分析

基于表面阻抗边界条件时域有限差分(FDTD)方法研究了一维斜入射情况下非磁化等离子体薄涂层涂敷金属材料的电磁散射特性, 该方法忽略对薄层背景材料进行网格剖分, 大大减少了计算量. 首先推导了理想导体涂敷等离子体薄涂层的表面阻抗频域表达式, 然后代入边界条件并变换到时域, 再用分段线性递推卷积方法将时域表达式离散得到FDTD迭代式. 编程计算了垂直及斜入射情形下的平行极化和垂直极化反射系数, 通过验证算例与解析解对比, 结果表明该方法的准确性和有效性. 最后利用该方法分析了不同入射角对反射系数的影响.     

纳米多晶铜中冲击波阵面的分子动力学研究

冲击波阵面反映材料在冲击压缩下的弹塑性变形行为以及屈服强度、应变率条件等宏观量, 还与冲击压缩后的强度变化联系. 本文使用分子动力学方法, 模拟研究了冲击压缩下纳米多晶铜中的动态塑性变形过程, 考察了冲击波阵面和弹塑性机理对晶界存在的依赖, 并与纳米多晶铝的冲击压缩进行了比较. 研究发现: 相比晶界对纳米多晶铝的贡献而言, 纳米多晶铜中晶界对冲击波阵面宽度的影响较小; 并且其塑性变形机理主要以不全位错的发射和传播为主, 很少观察到全位错和形变孪晶的出现. 模拟还发现纳米多晶铜的冲击波阵面宽度随着冲击应力的增加而减小, 并得到了冲击波阵面宽度与冲击应力之间的定量反比关系, 该定量关系与他人纳米多晶铜模拟结果相近, 而与粗晶铜的冲击压缩实验结果相差较大.     

A Distributed Architecture for Secure Delegated Quantum Computation

In this paper, we propose a distributed secure delegated quantum computation protocol, by which an almost classical client can delegate a (dk)-qubit quantum circuit to d quantum servers, where each server is equipped with a 2k-qubit register that is used to process only k qubits of the delegated quantum circuit. None of servers can learn any information about the input and output of the computation. The only requirement for the client is that he or she has ability to prepare four possible qubits in the state of (|0〉+eiθ|1〉)/2, where θ∈{0,π/2,π,3π/2}. The only requirement for servers is that each pair of them share some entangled states (|0〉|+〉+|1〉|−〉)/2 as ancillary qubits. Instead of assuming that all servers are interconnected directly by quantum channels, we introduce a third party in our protocol that is designed to distribute the entangled states between those servers. This would simplify the quantum network because the servers do not need to share a quantum channel. In the end, we show that our protocol can guarantee unconditional security of the computation under the situation where all servers, including the third party, are honest-but-curious and allowed to cooperate with each other.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

On the fractional integral of Weyl inL p

This work has been partially supported by D.G.C.Y.T., grant PS88-0115, Spain