Reexamination of the I2 spectrum near the B(3Π0u+) state dissociation limit

The disagreement of Danyluk and King's (Chem. Phys.25, 343 (1977)) rotational constants for levels lying near the dissociation limit of B-state I₂ with the mechanical behavior predicted by near-dissociation theory is investigated. The discrepancies are shown to be much too large to be explained by either the neglect of centrifugal distortion effects in the original analysis or by rotational or spin-rotation coupling to a nearby repulsive 1_u state. These differences are therefore attributed to experimental error, a conclusion which is confirmed by more recent experimental results. A reanalysis of the best available data for levels near the dissociation limit of B-state I₂ then yields improved values for the B-state dissociation limit $\text{D}$ = 20 043.16 (±0.02) cm^?1 of the vibrational index at dissociation v_$\text{D}$ = 87.32 (±0.04) and of the long-range potential constant $\text{C}{}_5\text{= 2.88 (±0.03) × 10}{}^5\text{cm}{}^{\mathrm{?1}}\text{A}\text{?}{}^5$. This in turn implies a slightly improved ground-state dissociation energy of $\text{D}$₀ = 12 440.18 (±0.02) cm^?1.     

微通道板噪声因子与工作电压关系研究

为了解决微通道板噪声因子的测量问题,提出了一种测量像增强器光电阴极灵敏度和信噪比,从而测量出微通道板噪声因子的方法 .根据该方法,分别在不同阴极电压、微通道板电压以及阳极电压条件下测量了微通道板的噪声因子.测量结果表明,当阴极电压、微通道板电压以及阳极电压分别变化时,微通道板的噪声因子会随之变化.微通道板电压对噪声因子的影响最大,阳极电压的影响最小.微通道板电压每增加100 V,噪声因子大约增加0.11,而阳极电压每增加100 V,噪声因子大约增加3.3×10-4.微通道板工作电压提高,意味着电子碰撞能量提高,同时也意味着二次电子发射系数提高,而根据现有微通道板噪声理论,微通道板的噪声因子会减小,但实测结果却相反.造成这一矛盾的原因是在现有微通道板噪声理论中,仅仅考虑了二次电子发射系数、探测率、电子碰撞几率的因数,而未考虑到电子碰撞能量的因数,因此噪声理论需要进行修正.     

The electronic properties and electron transport of sawtooth penta-graphene nanoribbon under uniaxial strain: ab-initio study

ABSTRACT

The electronic properties and electron transport of a sawtooth penta-graphene nanoribbon (SSPGNR) under uniaxial strains are theoretically studied by density-functional theory (DFT) in combination with the non-equilibrium Green's function formalism. We investigated the electronic structures and the current–voltage (I–V) characteristics of the SSPGNRs under a sequence of uniaxial strains in range from 10% compression to 10% stretch. In this strained range, carbon atoms still keep a pentagon network, but with the changing bond lengths. The C–C bond lengths change almost linearly with the tolerable strain. The value of the band gap of SSPGNRs can be depicted as a parabola under uniaxial strain. Our calculations show that the current is monotonous increase with compressive strain at the same applied bias voltage. In case of tensile strain, the variable rule of the current is different that it increases at first and decrease later. The fundamental physical properties (band structure, I–V characteristic) of SSPGNRs seem to be more sensitive to compressive strain than the stretch strain. The current intensity of the compressive-SSPGNR is by 2 orders of magnitude compared to that of the tensile-SSPGNR at the same strain in range from 6% to 10%. The results obtained from our calculations are beneficial to practical applications of these strained structures in SSPGNRs-based electromechanical devices.     

Multi-Scale Analysis of Energy Transfer in Scalar Turbulence

The energy transfer of homogeneous scalar turbulence is studied numerically by triad interaction in spectral space. The different transfer properties between turbulent kinetic energy and turbulent scalar energy reveal that non-local energy transfer exists as important as the local energy transfer in scalar turbulence. The non-local energy transfer of scalar turbulence results from non-local triad interaction. As a result there will be longer inertiaconvective range in scalar turbulence than the inertial subrange in turbulent kinetic transfer at Reλ = Peλ. The non-local transfer of turbulent scalar energy generates more energy transfer into dissipation range. The discovery of non-local transfer of turbulent scalar energy indicates that this phenomenon should be concerned carefully in numerical scheme and subgrid modelling of direct numerical simulation or large eddy simulation scalar turbulence.     

X-ray absorption study of Cu,Zn SOD under high pressure

Abstract

We have investigated Cu, Zn Superoxide Dismutase (Cu, Zn SOD) metal sites at high pressure using X-ray absorption. XAS (X-ray Absorption Spectroscopy) gives information on local structure and it is particularly suited to metal site investigation. To the best of our knowledge, this is the first time that protein conformational states have been investigated using the high pressure XAS technique. Cu, Zn SOD catalyses the dismutation of toxic oxygen radicals produced in cells; this reaction occurs at the copper metal site. Structural changes around the copper, induced by pressure, can be directly related to protein substates. Their characterisation is thus important in the understanding of protein activity.

The high-pressure device was a Paris-Edinburgh large volume cell.

Experiments were performed on lyophilised Cu, Zn SOD between 0 and 48 kbar at the copper and zinc K-edges. The two metal local atomic environments have a different behaviour as pressure increases: copper exhibits a more flexible environment; on the contrary, zinc shows small structural modifications. We have identified a state, formed between 3 and 8 kbar, which is stable up to 48 kbar.     

Stages of melting of graphene model in two-dimensional space

Spontaneous melting of a perfect crystalline graphene model in 2D space is studied via molecular dynamics simulation. Model containing 10⁴ atoms interacted via long-range bond-order potential (LCBOP) is heated up from 50 to 8,450 K in order to see evolution of various thermodynamic quantities, structural characteristics and occurrence of various structural defects. We find that spontaneous melting of our graphene model in 2D space exhibits a first-order behaviour of the transition from solid 2D graphene sheet into a ring-like structure 2D liquid. Occurrence and clustering of Stone–Wales defects are the first step of melting process followed by breaking of C–C bonds, occurrence/growth of various types of vacancies and multi-membered rings. Unlike that found for melting of a 2D crystal with an isotropic bonding, these defects do not occur homogeneously throughout the system, they have a tendency to aggregate into a region and liquid phase initiates/grows from this region via tearing-like or crack-propagation-like mechanism. Spontaneous melting point of our graphene model occurs at T_m = 7,750 K. The validity of classical nucleation theory and Berezinsky–Kosterlitz–Thouless–Nelson–Halperin–Young (BKTNHY) one for the spontaneous melting of our graphene model in strictly 2D space is discussed.