含高阶非线性效应的薛定谔方程的精确解研究

利用孤子理论,研究了含三次和五次非线性项的非线性薛定谔方程,在参数取不同值时得到了方程的新型亮孤子解、新型暗孤子解和新的三角函数周期解。     

Influence of Generalized (r, q) Distribution Function on Electrostatic Waves

Non-Maxwellian particle distribution functions possessing high energy tail and shoulder in the profile of distribution function considerably change the damping characteristics of the waves. In the present paper Landau damping of electron plasma (Langmuir) waves and ion-acoustic waves in a hot, isotropic, unmagnetized plasma is studied with the generalized (r,q) distribution function. The results show that for the Langmuir oscillations Landau damping becomes severe as the spectral index r or q reduces. However, for the ion-acoustic waves Landau damping is more sensitive to the ion temperature than the spectral indices.     

辐照电子在光纤芯处能量沉积的计算

为了用尽可能低的辐照电子能量在光纤芯处形成大的性质改变,模拟了0.1～1 MeV能量的电子辐照二氧化硅.发现每一特定能量的电子辐照二氧化硅时,在其中有个能量沉积最快的位置.计算得到0.447 4 MeV能量的电子在单模光纤中心能量沉积最快,分析发现对于这个能量的电子多数可以穿透到光纤芯处,电子能量在光纤芯处的沉积主要是由于电子能量的减小造成的.这些结果可为用电子辐照光纤制作光器件时的初始电子能量选择提供参考.     

混合工质变浓度空调系统动态特性的模拟

本文在分析混合工质变浓度空调系统的传热传质和参数间的相互耦合关系的基础上,以实际流体的质量、动量和能量守恒方程为基础,结合系统各部件的特点,分别建立了各部件的数学模型,并实现了对系统动态特性的模拟计算和分析。     

槲皮素包裹修饰硅包银纳米颗粒作为荧光传感器对铜离子的识别作用

制备了一种基于天然产物槲皮素接枝硅包银核壳结构的纳米荧光传感器(Ag@SiO₂@Qc),对铜离子具有好的选择性和灵敏性。Ag@SiO₂@Qc与Cu2+离子结合后,荧光发射强度发生猝灭,并且可通过荧光滴定光谱得到了荧光滴定曲线：y = -32.864x+587.59(R2=0.998),其线性范围分别为：3×10-7~4.8×10-6 mol·L-1,最低检测限为1.0×10-7 mol·L-1。并且将Ag@SiO₂@Qc应用于环境中水样的检测结果的准确度好,精密度高,而且更加环保、方便、快捷,具有很大发展潜力与应用价值。     

Effects of Annealing on Schottky Characteristics in A1GaN/GaN HEMT with Transparent Gate Electrode

A1GaN/GaN heterostructure transistors are promising for power and switching applications. In addition, the transparent wide band-gap A1GaN/GaN heterostructure systems have received considerable attention to transparent electronics. Nowdays, Al-doped ZnO （AZO） thin film plays an increas- ingly important role in various fields of transparent electronics.The AZO-gated A1GaN/GaN HEMT with good dc characteristics and frequency character- istics has been reported. Annealing is widely used to improve the electri- cal characteristics of A1GaN/GaN HEMTs. It is re- ported that the Schottky leakage current can be re- duced by over four orders of magnitude by annealing in an A1GaN/GaN heterostructure with ITO/Ni/Au electrode. Pei et al. reported that the transparency of Ni/ITO gates of A1GaN/GaN HEMTs has been sig- nificantly improved after annealing. However, the evaluation of Schottky C V characteristics was ab- sent. Up to now, few results are reported on the Schot- tky annealing characteristics of AZO in A1GaN/GaN HEMT. Thus the effects of annealing on the leakage current, transparency and interface states character- istics need further study.     

微波辐照活性炭床同时脱除SO2和NOx实验研究

论文进行了微波辐照活性炭同时脱硫脱硝实验,研究了烟气中不同组分对脱硫脱硝效率的影响。结果表明,高浓度SO₂对脱硝有轻微抑制。NO对脱硫有一定程度的促进;烟气中O₂的加入对脱硫脱硝均有促进作用;而含湿量的增加首先会使脱硫脱硝效果提高,当含湿量增至9.1%时,脱硫脱硝效率均有下降趋势;烟气中加入CO₂后,脱硫脱硝效率均下降,在氧含量为10%时,脱硫效率下降6%,脱硝效率下降7%。BET测试表明,微波辐照活性炭后其表面积与基炭相比有少量下降。     

近红外光谱相关系数法用于快速检测药品的质量

对近红外光谱相关系数法检测药品质量变化的效果进行了研究,并考察了相关系数方法对同一品种药品来自不同厂家生产的样品的区分能力进行了计算,还研究了在不同仪器上、由不同人员测定光谱时相关系数方法的识别能力。本文还对计算相关系数时的光谱预处理方法和谱段等参数进行了探讨,提供了建议性的参数条件,为近红外光谱相关系数方法用于药品质量快速分析提供参考。     

Lattice Bhatnagar-Gross-Krook Simulations of Hydromagnetic Double-Diffusive Convection in a Rectangular Enclosure with Opposing Temperature and Concentration Gradients

The temperature-concentration lattice Bhatnagar-Gross-Krook （TCLBGK） model with a robust boundary scheme is developed for two-dimensional hydromagnetic double-diffusive convective flow of a binary gas mixture in a rectangular enclosure, in which the upper and lower walls are insulated, while the left and right walls are constant temperature and constant concentration, and a uniform magnetic field is applied in the x-direction. In the model the velocity, temperature and concentration fields are solved by three independent LBGK equations, which are combined into a coupled equation for the whole system. In our simulations, we take the Prandtl number Pr = 1.0, the Lewis number Le = 2.0, the thermal Rayleigh number RaT = 10^5, and the aspect ratio A = 2 for the enclosure. The numerical results are found to be in good agreement with those of previous studies.     

Effects of High Pressure on BC3

High-pressure phases of BC3 are studied within the local density approximation under the density functional theory framework. When the pressure reaches 20 GPa, the layered BC3 that is a semiconductor at ambient pressure, becomes metallic. As the pressure increases, the material changes into a network structure at about 35 GPa. To understand the mechanism of phase transitions, band structure and density of states are discussed. With the increase of pressure, the width of bands broadens and the dispersion of bands enlarges. Additionally, the density of states of the network bears great resemblance to that of diamond. Formation of the sp3 bonding in the network is the main reason for the structural transformation at 35 GPa.