首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   641124篇
  免费   5841篇
  国内免费   1491篇
化学   323476篇
晶体学   9445篇
力学   31975篇
综合类   16篇
数学   85044篇
物理学   198500篇
  2021年   5796篇
  2020年   6424篇
  2019年   7247篇
  2018年   9955篇
  2017年   9900篇
  2016年   14066篇
  2015年   7937篇
  2014年   13174篇
  2013年   28529篇
  2012年   22470篇
  2011年   27069篇
  2010年   20257篇
  2009年   20332篇
  2008年   25486篇
  2007年   25080篇
  2006年   23032篇
  2005年   20367篇
  2004年   19123篇
  2003年   17087篇
  2002年   17257篇
  2001年   18524篇
  2000年   14322篇
  1999年   11050篇
  1998年   9556篇
  1997年   9212篇
  1996年   8712篇
  1995年   7864篇
  1994年   7822篇
  1993年   7602篇
  1992年   8188篇
  1991年   8554篇
  1990年   8280篇
  1989年   8119篇
  1988年   7916篇
  1987年   7868篇
  1986年   7388篇
  1985年   9288篇
  1984年   9520篇
  1983年   7763篇
  1982年   8005篇
  1981年   7710篇
  1980年   7212篇
  1979年   7919篇
  1978年   8125篇
  1977年   8128篇
  1976年   8119篇
  1975年   7505篇
  1974年   7361篇
  1973年   7474篇
  1972年   5721篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
101.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991.  相似文献   
102.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 624–629, October, 1991.  相似文献   
103.
The Langevin dynamics and fluctuational-dissipative relationships for the hydrodynamic fluctuations for systems which are described in the third Barnett order with respect to the gradients of the hydrodynamic variables are generalized on the basis of a kinetic approach.  相似文献   
104.
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.  相似文献   
105.
106.
We study matter-wave solitons in Bose-Einstein condensates of ultracold gaseous atoms with spin degrees of freedom and present a class of exact solutions based on the inverse scattering method. The one-soliton solutions are classified with respect to the spin states. We analyze collisional effects between solitons in the same or different spin state(s), which reveals a very interesting possibility: we can manipulate the spin dynamics by controlling the parameters of colliding solitons.  相似文献   
107.
108.
The acoustic field inside a shell excited by a spatially inhomogeneous harmonic pressure field is studied. The shell is assumed to have a finite length, a set of orthogonal stiffening ribs, two ends bounding the acoustic volume, and a sound-insulating structure, which includes layers of sound-insulating material, resonant elements, and an interior panel. The shell is considered to be orthotropic with boundary conditions corresponding to a free support. For the acoustic field in the closed volume, analytical expressions are derived with allowance for the elastoacoustic interaction of the shell with the sound-insulating layers and with the medium both inside the shell (with arbitrary impedance values at the ends) and outside it. These expressions are used to investigate the effect of different types of resonant systems on the sound field inside the shell.  相似文献   
109.
 In this contribution we consider a phenomenon of metastable states in antiprotonic helium atoms, precise spectroscopy of these states and a present-day study of the electromagnetic properties of antiprotons. Received October 16, 2001; accepted for publication November 13, 2001  相似文献   
110.
The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号