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101.
A. I. Bril' V. P. Kabashnikov N. V. Kuz'mina Yu. V. Khodyko 《Journal of Applied Spectroscopy》1991,55(3):934-939
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991. 相似文献
102.
V. K. Malyutenko A. I. Liptuga V. A. Botte V. I. Chernyakhovskii 《Journal of Applied Spectroscopy》1991,55(4):1024-1028
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 4, pp. 624–629, October, 1991. 相似文献
103.
V. V. Tokarchuk 《Journal of Applied Mathematics and Mechanics》1989,53(6):708-715
The Langevin dynamics and fluctuational-dissipative relationships for the hydrodynamic fluctuations for systems which are described in the third Barnett order with respect to the gradients of the hydrodynamic variables are generalized on the basis of a kinetic approach. 相似文献
104.
C. Ghezzi E. Gombia R. Mosca M. Pillan 《Applied Physics A: Materials Science & Processing》1989,48(5):457-463
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device. 相似文献
105.
106.
We study matter-wave solitons in Bose-Einstein condensates of ultracold gaseous atoms with spin degrees of freedom and present a class of exact solutions based on the inverse scattering method. The one-soliton solutions are classified with respect to the spin states. We analyze collisional effects between solitons in the same or different spin state(s), which reveals a very interesting possibility: we can manipulate the spin dynamics by controlling the parameters of colliding solitons. 相似文献
107.
108.
The acoustic field inside a shell excited by a spatially inhomogeneous harmonic pressure field is studied. The shell is assumed
to have a finite length, a set of orthogonal stiffening ribs, two ends bounding the acoustic volume, and a sound-insulating
structure, which includes layers of sound-insulating material, resonant elements, and an interior panel. The shell is considered
to be orthotropic with boundary conditions corresponding to a free support. For the acoustic field in the closed volume, analytical
expressions are derived with allowance for the elastoacoustic interaction of the shell with the sound-insulating layers and
with the medium both inside the shell (with arbitrary impedance values at the ends) and outside it. These expressions are
used to investigate the effect of different types of resonant systems on the sound field inside the shell. 相似文献
109.
V. I. Korobov 《Few-Body Systems》2002,31(2-4):133-138
In this contribution we consider a phenomenon of metastable states in antiprotonic helium atoms, precise spectroscopy of
these states and a present-day study of the electromagnetic properties of antiprotons.
Received October 16, 2001; accepted for publication November 13, 2001 相似文献
110.
The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers. 相似文献