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Book reviews

     

Electron traps and positive DLTS signals in VPE GaAs MESFETs

Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.     

Porosity and typical properties of real-valued continuous functions

Some well-known theorems on typical properties of real-valued continuous functions defined on [0, 1] are improved using the notion of porosity.     

Evaluating the Efficiency of US Air Force Real-Property Maintenance Activities

The objective of this research is to evaluate a new methodology, data envelopment analysis (DEA), as a tool for measuring and evaluating the operational efficiency of US Air Force organizations. This study involves the application of DEA to locate possible inefficiencies in the performance of US Air Force real-property maintenance activities. Dynamic behaviour, as exhibited via window analyses, is reviewed along with static counterparts. The testing was done in close coordination with Air Force officials, who reviewed the results for accuracy, validity and relevance. We conclude that this type of efficiency analysis does have value for the Air Force, where it can serve as a guide to auditors, budget programmers, managers and others in measuring, evaluating and enhancing operational efficiency.     

Exact soliton solutions of spinor Bose-Einstein condensates

We study matter-wave solitons in Bose-Einstein condensates of ultracold gaseous atoms with spin degrees of freedom and present a class of exact solutions based on the inverse scattering method. The one-soliton solutions are classified with respect to the spin states. We analyze collisional effects between solitons in the same or different spin state(s), which reveals a very interesting possibility: we can manipulate the spin dynamics by controlling the parameters of colliding solitons.     

Acoustic field in a closed layered shell with resonant systems

The acoustic field inside a shell excited by a spatially inhomogeneous harmonic pressure field is studied. The shell is assumed to have a finite length, a set of orthogonal stiffening ribs, two ends bounding the acoustic volume, and a sound-insulating structure, which includes layers of sound-insulating material, resonant elements, and an interior panel. The shell is considered to be orthotropic with boundary conditions corresponding to a free support. For the acoustic field in the closed volume, analytical expressions are derived with allowance for the elastoacoustic interaction of the shell with the sound-insulating layers and with the medium both inside the shell (with arbitrary impedance values at the ends) and outside it. These expressions are used to investigate the effect of different types of resonant systems on the sound field inside the shell.     

A simplified method of computing the process of opening of a parachute

We propose a simplified method of determining the integral characteristics of the opening of a parachute which makes it possible to compute the maximal stress on a parachute and the trajectory parameters of the motion of the load in the region of the opening of the parachute, and to determine the size of the portion of the canopy at the time of maximal stress.Translated fromDinamicheskie Sistemy, No. 6, 1987, pp. 38–41.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.