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31.

A method for calculating the parameters of formation of vacancies in crystals formed by spherically symmetrical atoms was developed. Both quantum effects at low temperatures and the possibility of the delocalization of atoms at high temperatures were studied. The parameters of formation of vacancies in carbon subgroup element crystals C-diam, Si, Ge, α-Sn, and Pb were calculated. The inclusion of the delocalization of atoms was shown to increase the enthalpy, entropy, and volume of vacancy formation. At low temperatures, the parameters of vacancy formation were found to depend strongly on the temperature, and the entropy of vacancy formation became negative. At high temperatures, close agreement with experimental data and theoretical estimates reported by other authors was obtained. The temperature dependence of vacancy parameters was studied for diamond heated isobarically from 100 to 4500 K. The applicability scope of the Arrhenius equation with a temperature-independent activation energy is discussed. The validity of the “compensation rule” (correlation between the entropy and enthalpy of vacancy formation) was demonstrated. It was also shown that the volume and entropy of vacancy formation were correlated over the whole temperature range studied.

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The diversity of products in the reaction of diethyl azodicarboxylate (DEAD)/diisopropyl azodicarboxylate (DIAD) and activated acetylenes with PIII compounds bearing oxygen or nitrogen substituents is discussed. New findings that are useful in understanding the nature of intermediates involved in the Mitsunobu reaction are highlighted. X-ray structures of two new compounds (2-t-Bu-4-MeC6H3O)P (μ-N-t-Bu)2P+[(NH-t-Bu)N[(CO2]-i-Pr)(HNCO2-i-Pr)]](Cl-)(2-t-Bu-4-MeC6H3OH)(23)and [CH2(6-t-Bu-4-Me-C6H2O)2P(O)C(CO2Me)C-(CO2Me)CClNC(O)Cl] (33) are also reported. The structure of23 is close to one of the intermediates proposed in the Mitsunobu reaction.  相似文献   
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Considering the importance of the X-ray production cross sections for the determination of the element concentrations in a given material, we have measured them experimentally for Al Si, Sc, Ti, V, Fe, Co, Ni and Cu bombarded by protons with energies ranging from 40 to 180 keV. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
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We consider the plane-strain buckling of a cylindrical shellof arbitrary thickness which is made of a Varga material andis subjected to an external hydrostatic pressure on its outersurface. The WKB method is used to solve the eigenvalue problemthat results from the linear bifurcation analysis. We show thatthe circular cross-section buckles into a non-circular shapeat a value of µ1 which depends on A1/A2 and a mode number,where A1 and A2 are the undeformed inner and outer radii, andµ1 is the ratio of the deformed inner radius to A1. Inthe large mode number limit, we find that the dependence ofµ1 on A1/A2 has a boundary layer structure: it is constantover almost the entire region of 0 < A1/A2 < 1 and decreasessharply from this constant value to unity as A1/A2 tends tounity. Our asymptotic results for A1 – 1 = O(1) and A1– 1 = O(1/n) are shown to agree with the numerical resultsobtained by using the compound matrix method.  相似文献   
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We present all-atom molecular dynamics simulations ofn-hexane on the basal plane of graphite at monolayer and multilayer coverages. In keeping with experimental data, we find the presence of ordered adsorbed layers both at single monolayer coverage and when the adsorbed layer coexists with excess liquid adsorbate. Using a simulation method that does not impose any particular periodicity on the adsorbed layer, we quantitatively compare our results to the results of neutron diffraction experiments and find a structural transition from a uniaxially incommensurate lattice to a fully commensurate structure on increasing the coverage from a monolayer to a multilayer. The zig-zag backbone planes of all the alkane molecules lie parallel to the graphite surface at the multilayer coverage, while a few molecules are observed to attain the perpendicular orientation at monolayer coverage. Dedicated to Professor C N R Rao on his 70th birthday  相似文献   
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