80.
The influence of processing parameters on the electrical characteristics of RuO
2/LaAlO
3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO
3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO
3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO
3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc
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