Formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation

The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)     

High quantum efficiency of intersubband transitions in coherent tunneling of electrons through asymmetric double-barrier structures

A converging perturbation series that can be summed analytically has been obtained for intersubband transitions of electrons coherently tunneling through the middle of a dimensionally quantized level in an asymmetric double-barrier structure in a high-frequency terahertz electric field. The possibility of a substantial increase in tunneling current accompanied by either absorption or emission of a photon has been demonstrated. The quantum efficiency of radiative transitions between dimensionally quantized levels can be up to 66%. Zh. éksp. Teor. Fiz. 112, 237–245 (July 1997)     

Temperature and field dependences of photo-induced changes in the magnetization in yttrium iron garnet

The changes in the magnetization of yttrium iron garnet (YIG) when irradiated by a pulsed neodymium laser beam with wavelength λ=1.06 μm are investigated. Measurements are performed in the temperature range from 100 K to 600 K in various external magnetic fields. YIG single crystals grown along the crystallographic (100), (110), and (111) directions are chosen so that the external anisotropy of the indicated processes can be determined. Characteristic temperature intervals dominated by different mechanisms of variation of the magnetization under the influence of a laser pulse are discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 1263–1266 (July 1997)     

Temperature and frequency dependence of the spin-lattice relaxation times of E′1 centers in neutron-irradiated quartz glass

Results are reported for measurements of the spin-lattice relaxation times of E′₁ centers in quartz glass, produced by neutron irradiation, with the measurements made at two frequencies 9.25 and 24.0 GHz over a wide temperature interval 1.5–300 K. The experimental data are interpreted on the basis of interaction mechanisms of the spins with two-level systems with excitation energies ∼6, ∼26, and ∼420 cm⁻¹. A small modification of the existing theory allows us to explain a number of features of the observed temperature and frequency dependence of the relaxation rate. The results are compared with the data available in the literature on spin-lattice relaxation of irradiation centers in crystalline quartz and quartz glass. Fiz. Tverd. Tela (St. Petersburg) 39, 1335–1337 (August 1997)     

Excitation of bulk elastic waves at the surfaces of piezoelectric crystals with 422,622 symmetry

The problem of exciting bulk elastic waves at the surface of a piezoelectric with symmetries 422,622 has been solved by a successive approximation method. In the approximation of a fixed electric field, created at the surface of the piezoelectric crystal by a two-electrode transducer, the distributions are found for the shear wave stress and the energy flux density in the far zone. The equivalent circuit parameters for a two-electrode radiator are determined taking account of the dynamic piezoelectric correction obtained in the second approximation. The equivalent circuit parameters and the transducer loss are treated for TeO₂ crystals. A realistic possibility of using surface transducers in the development of acousto-optic modulators in the s.h.f. region is shown. Tomsk State Academy of Control Systems and Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 8–15, January, 1997.     

Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.     

Increasing the accuracy of eigenvalue computation in the spectral problem

A simple method is proposed for increasing the accuracy of computation of the eigenvalues of elliptic operators, which does not require high-order accurate schemes.Translated from Vychislitel'naya i Prikladnaya Matematika, No. 63, pp. 63–68, 1987.     

Investigation of the conditions for feeding filamentary silicon crystals,growing in a reactor with hot walls

An estimate of the factors which influence the rate of growth of filamentary silicon crystals in a standard chloride system using a quartz reactor with hot walls is given. It is shown that a diffusion form of crystallization is observed under the conditions investigated.Voronezh State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 22–26, October, 1995.