Synthesis and Antiproliferative Activity of Novel Hydrazono Thiazolidene and Thiazole Derivatives Bearing Rhodanine Moiety

Russian Journal of General Chemistry - Some new fluoro-heterocyclic compounds containing thiazole and pyridine moities have been synthesized and studied for their antiproliferative activity....     

Stacking Gaussian processes to improve $$pK_a$$ p K a predictions in the SAMPL7 challenge

Journal of Computer-Aided Molecular Design - Accurate predictions of acid dissociation constants are essential to rational molecular design in the pharmaceutical industry and elsewhere. There has...     

Sulfonamide-Functionalized Porous Organic Framework as an Efficient Heterogeneous Acid Catalyst for One-Pot Preparation of 1,8-Dioxooctahydroxanthenes

Russian Journal of Organic Chemistry - Herein, we report the sulfonamide-functionalized covalent organic framework (COF-SO3H), prepared by condensation of melamine and terephthalaldehyde and...     

Solid Echo in Three-Spin Groups with Arbitrary Constants of Dipole–Dipole Interaction

Applied Magnetic Resonance - The suggested approach allowed us to derive analytical expressions for modeling the shape of solid-echo signal and its time evolution for a system of three-spin groups...     

3D‐morphology reconstruction of nanoscale phase‐separation in polymer memory blends

In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase‐separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1231–1237