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991.
All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.  相似文献   
992.
We study two-variable Engel-like relations and identities characterizing finite-dimensional solvable Lie algebras and, conjecturally, finite solvable groups and introduce some invariants of finite groups associated with such relations. Bibliography: 29 titles.  相似文献   
993.
We argue that the two-dimensional elliptic quantum dot problem with finite barrier cannot be exactly solved, contrary to a recent assertion (van den Broek and Peeters, Physica E 11 (2001) 345. We also prove it explicitly by numerically calculating the correct energy spectrum.  相似文献   
994.
The effect of bacterial and fungal activities on organic matter degradation in Brazilian soils was studied by a microcalorimetric method. Bacteria and fungi isolated from tropical soils and added to: Rhodic eutrudox (R), Typic eutrudox (V) and Quartzipsamment (Q) soils amended separately with moisture (control) (A) and 25% of cattle manure (E), municipal refuse compost (L), earthworm casts (H) or 23 μg of trifluralin (T) were investigated. The number of colony forming units in soil suspension was quantified by microscopy and inoculated in respective soil. All processes were measured at intervals of 7 days over a period of 35 days. The exothermic thermal effect (μJ) per cm3 of bacteria or fungi per gram of dry soil, respectively, for each substrate was: [(9±1), (4±1)] RA; [(478±24), (105±5)] RE; [(121±6), (71±4)] RL; [(121±6), (71±4)] RH; [(8±1); (3±1)] RT; [(10±1), (9±1] VA; [(347±17), (261±13)] VE; [(71±4), (28±1)] VL; [(22±1), (33±2)] VH; [(7±1), (10±1)] VT; [(19±1), (12±1)] QA; [(1301±65), (46±2)] QE; [(89±4), (9±1)] QL; [(130±7), (11±1)] QH; [(32±2), (8±1)] QT. The calorimetric values are higher for bacteria than for fungi. In general, the results showed higher activities in the soil amended with cattle manure than with other additives.  相似文献   
995.
In this paper we report on tight-binding calculations of lowest unoccupied molecular orbitals states for silicon ellipsoidal nanocrystals. The electronic structure has been calculated for different nanocrystal shapes either keeping constant or varying the number of silicon atoms. We have found that changing the ellipsoid aspect ratio a non-obvious energy level structure is obtained. The implications for the infrared optical transitions and their relationship with the polarization of the radiation involved are discussed.  相似文献   
996.
The odd excited negative binomial states are introduced using the photon creation operator by repeated application on negative binomialstates. These states interpolate between the odd displaced Fock states and the odd excited pure thermal states. In this paper both squeezing phenomena (normal squeezing and amplitude squared squeezing) are discussed. Besides discussion of the Glauber second-order correlation function, investigations are carried out for the quasi-probability distribution functions (Wigner function and Q-function). Finally the Pegg-Barnett phase probability distribution is computed for these states.  相似文献   
997.
A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al2O3 interfaces.  相似文献   
998.
The slip velocity of a rarefied gas nonuniform in temperature and mass velocity is calculated for gas slip over the surface of a right circular cylinder. The calculation uses the two-moment boundary condition in an approximation linear in Knudsen number. Corrections to the slip velocity that are due to the interface curvature, volume temperature stresses, and nonuniform temperature distribution in the Knudsen layer are studied as func-tions of the accommodation coefficients in the first two moments of the distribution function. The Bhatnagar-Gross-Krook model of the Boltzmann kinetic equation is employed as the basic equation for the gas state.  相似文献   
999.
The synthesis and characterization of a new homologous series of compounds, the 2-cyano-1,3-phenylene bis[4-(4-n-alkoxyphenyliminomethyl)benzoates] derived from 2-cyanoresorcinol is reported. All the compounds are enantiotropic mesogens and exhibit the fascinating B7 mesophase. The characterization of the mesophase was performed using polarizing optical microscopy, differential scanning calorimetry, X-ray diffraction and electro-optical studies.  相似文献   
1000.
Chemisorption is a well-known phenomenon for many interfaces between organic semiconductors and metals. It is shown that many published data indicate that the occurrence of chemisorption can be rationalized upon the consideration of the metal work function versus the electron affinity of the organic semiconductor.  相似文献   
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